VG Semicon to Equip Agilent's New Wafer Fabrication Facility with Production MBE Systems
Source: VG Semicon
Beverly, MA.VG Semicon (a wholly owned subsidiary of Thermo Electron Corporation) announced today that it has received orders from Agilent Technologies Inc. for three V150 molecular beam epitaxy (MBE) systems which will be used to equip Agilent s new six-inch wafer fabrication line in its Fort Collins, Colorado., facility. Agilent recently announced that it intends to produce products for CDMA, GSM, and 3G mobile handsets based on its enhancement-mode pseudomorphic high-electron-mobility transistor (E-pHEMT) technology. According to Agilent the first phase of the fab is planned to be in full production by the end of 2002 and is expected to initially produce 48,000 six-inch wafers per year.
The V150 was the first multi-6" high-volume MBE system to be industry-qualified and has gained wide acceptance as the pre-eminent production MBE platform. "We are very pleased to have received this order from one of the most important wireless technology companies," said David Williams, Managing Director or VG Semicon. "Agilent used our V100 MBE system to develop its E-pHEMT technology and to be selected again as Agilent s MBE vendor for their expansion is very significant for us."
Agilent s new fabrication line will help the company to keep pace with anticipated demand for its high-efficiency handset power modules using E-pHEMT device technology. According to Agilent E-pHEMT technology promises power-amplifier modules that will improve CDMA and GSM mobile phone battery life
Agilent s order was received in Q3 2000 and was included in the previously announced record orders of $42.9M for VG Semicon in the first 9 months of 2000.
Contact: Philip Sullivan Tel: 978 922 1865 psullivan@vgmbe.com
Philip SullivanTel: 978 922 1865
psullivan@vgmbe.com
E-mail: psullivan@vgmbe.com
