Alpha Wins Orders From Cisco, Siemens Alpha Industries has begun shipping production volumes of its GaAs MMICs and RF semiconductors for broadband Internet access under a new global sourcing alliance with a leading network provider, believed to be Cisco Systems. Alpha will supply a family of RF and broadband products, including GaAs MMIC switches, attenuators, passive products and millimeter-wave devices for use in broadband fixed wireless access and LAN systems. "With the development of new OC-192 and OC-768 components based on our high-speed GaAs HBT and PHEMT processes, Alpha is poised to support next-generation fiber-optic systems, high-speed enterprise networks and last-mile access technologies," said Lj Ristic, Alpha s VP of Technology. In more news, Alpha has begun shipping GaAs ICs for Siemens newest dual-band GSM wireless handsets for the European market, and expects full production to begin by June 2001. Siemens, the world s fourth-largest handset manufacturer, emerged as one of the fastest-growing mobile phone companies in the third quarter of 2000. Dave Fryklund, general manager of Alpha s IC Business Unit, said that the Siemens contract underscores the company s strategy to expand its relationship with key OEM handset customers. "We expect our involvement with Siemens and the other market-leading handset manufacturers to increase as we continue to offer improved performance in our GaAs control ICs, and as we introduce the first switch-filter solutions this quarter based on our new Alpha Integration Platform [see CS 6(9), p. 32]." RFMD, Qualcomm Partnership Unveils New PA Modules RF Micro Devices and Qualcomm CDMA Technologies (QCT) have developed a series of highly integrated PA modules, the second set of products to come from the partnership between the two companies. Based on a RFMD s GaAs HBT process, "the new PA3300 PA module continues QCT s commitment to develop CDMA RF products that enable manufacturers to develop more sophisticated yet cost-effective wireless handsets," said QCT s marketing and product manager, Johan Lodenius. "By teaming together from the concept stage through development, we were able to create a highly integrated and innovative PA module optimized to support and complement Qualcomm s total CDMA solution," said RFMD s Jerry Neal. The new PA module forms part of a highly integrated CDMA chipset solution. The total package size of the 13-pin land grid array (LGA) package is 6 7.5 mm2, and features integrated bias control and compensation for consistent performance of gain, quiescent current and Adjacent Channel Power Rejection (ACPR). The US cellular module delivers 28 dBm linear output power with 28 dB gain from a 3.2 V supply. Sample shipments for cellular and PCS are available now, with Korean PCS and JCDMA samples expected to follow in the first quarter of 2001, and an IMT band version expected to sample in the second quarter of 2001. Filtronic Launches First Products From New Plant Filtronic Compound Semiconductors has launched the first commercial products manufactured at its facility at Newton Aycliffe (County Durham, UK). The new 3 V products comprise of a low loss SPDT microwave and SPQT MMIC switches, and a high isolation SPDT MMIC switch, and are targeting handsets and base station applications. Filtronic says these switches will initially be available in 4 4 MLF (Micro Lead Frame) type packages, and will satisfy all GSM operation requirements, including high isolation and large signal operation. "The Newton Aycliffe facility has come a long way in a short time and has achieved production status readiness as indicated by these and other new products," said Filtronic s Christopher Snowden. "With the number of mobile handsets worldwide currently estimated to be over 600 million and increasing rapidly, we see demand for microwave switches within handsets and base stations increasing commensurately." New Products W-CDMA PAs from RFMD Greensboro, NC. RF Micro Devices has introduced three new GaAs HBT linear variable gain amplifiers. Two amplifiers, the RF2381 and RF2377 TX, are part of a complete single-mode W-CDMA chipset solution previously announced in February 2000. Operating from a single 2.73.3 V power supply, all three amplifiers feature a 50 dB linear gain control range, high linearity, high gain and a low noise figure. Manufactured using GaAs HBT process technology, these components are offered in six-lead plastic SOT packages (SOT23-6). Celeritek Unveils 3.5 GHz W-CDMA PA Santa Clara, CA. Celeritek has unveiled a new W-CDMA power amplifier for wireless data transmission at 3.5 GHz. The part is manufactured in a 4 4 mm, leadless chip carrier package. The CMM3566-LC is a linear PA intended for use in subscriber units and base stations operating from 3.45 to 3.50 GHz. Typical features include operation at 7.0 V, 30 dB gain at operating output and +24 dBm of linear output power (W-CDMA). Fujitsu Expands GaAs MMIC PA Line San Jose, CA. Fujitsu Compound Semiconductor, Inc. is introducing four new millimeter-wave, high power MMIC amplifiers manufactured with a 0.25 m PHEMT process. Covering the 17.5 to 31.5 GHz frequency band with output power ranging between 26 and 31 dBm, these new devices are designed for point-to-point or point-to-multipoint radio link and Local Multipoint Distribution System (LMDS) applications. Stanford Microdevices Unveils 3G Base Station Components Sunnyvale, CA. Stanford Microdevices, a fabless GaAs manufacturer, has unveiled a new line of GaAs and SiGe transceiver ICs and multichip modules for 3G wireless base station applications, including modulator, mixer, amplifier, transmitter and receiver functions. Production volumes are targeted for mid-2001. "For Stanford Microdevices, this new line represents an initial step into products featuring higher levels of functionality and integration for the fast-growing mobile arena," said Gary Gianatasio, VP and general manager of mobile wireless infrastructure products. Samsung Employs Infineon s New Mixers Infineon s new linear GaAs down-conversion mixer ICs will be employed in the next generation of cell phones and modem-enabled PDAs manufactured by Samsung Electronics Company. The new mixers combine excellent linearity with low noise figures and low power consumption, in addition to reduced distortion for improved data transfer rates. "We chose Infineon because of their vast experience with RF technology and linear down-converters, their established leadership in GaAs process technology, and their ability to meet our high volume requirements," said Dales Sohn, of Samsung s corporate planning team. $15M Investment for Hittite Microwave Hittite Microwave Corporation, a fabless MMIC house based in Chelmsford, MA, has received $15 million in funding from venture capital company Summit Partners of Boston. Hittite s high volume MMIC production includes around 150 GaAs MMICs covering the DC to 40 GHz range, and consists of switches, mixers, sensors, attenuators, amplifiers, frequency multipliers and ASICs. The company says the investment will allow continued growth, including the expansion of its design and manufacturing capabilities. Hittite has extensive device and system level knowledge in analog and mixed signal MMIC design, including MESFET, HBT, PHEMT, and BiCMOS IC fabrication processes.