Technical Insight
RF Nitro News (Nitride News)
RF Nitro Demonstrates GaN-based VCOs RF Nitro has demonstrated the industry s first high efficiency multi-Watt AlGaN/GaN HEMT VCOs. Varactor-tuned oscillators implemented using distributed networks oscillate at 3 GHz with a output power of 2.7 W, an efficiency of 27% and with a supply voltage range of 3.530 V. The nominal bandwidth tuning was 6%. Based in Charlotte, North Carolina, RF Nitro was recently set up to manufacture microwave and millimeter wave components based on GaAs and GaN [see CS 6(7), p. 17] Separate designs for single side-band noise of GaN-based VCOs were phase noise tested at 6 GHz along with GaAs VCOs based on FET and HBT designs (see figure). GaN FET VCOs were found to be comparable to the phase noise characteristics of VCOs built using GaAs FET amplifiers. "These results indicate high power AlGaN/GaN-based VCOs may be used as high efficiency sources for radio communications," said Joseph Smart, VP of Advanced Technology.
