Veeco systems big in Asia for gallium nitride on silicon epitaxy
M. J. Jou, President of Epistar, commented, “We are pleased to choose Veeco’s K465i as our GaN-on-Si development tool. We are excited about the potential of GaN-on-Si technology as we move to larger wafer sizes. We appreciate the strong support from Veeco, and look forward to this collaboration.”
Veeco TurboDisc K465i GaN MOCVD reactor
William J. Miller, Veeco’s Executive Vice President, Process Equipment, commented, “We are very pleased that Epistar has chosen the K465i, which provides low cost-of-ownership and production worthiness, for its GaN-on-Si LED development. Large diameter Si wafers offer tremendous promise as a low cost alternative to sapphire for volume production of lower cost LEDs.”
Located in the Hsinchu Science-based Industrial Park, Taiwan, Epistar manufactures high brightness LEDs of compact size, low power consumption and long operation life.
LG Siltron, a South Korean epi wafer manufacturer, also chose the TurboDisc K465i GaN MOCVD system for production of GaN-on-Silicon wafers for power electronics and LED devices.
As traditional silicon-based power transistors approach their limits, materials such as GaN are gaining popularity to speed energy conversion at lower costs. A wide range of industries, including many in the green-tech space such as wind, solar, smart grid, and hybrid electric vehicles, are driving demand for energy-efficient GaN-based power electronics. GaN-on-Silicon may also offer an alternative approach to LED manufacturing.
Hee Bog Kang, General Manager of LG Siltron R&D, commented, “We are pleased to have chosen the TurboDisc K465i MOCVD System as our first GaN-on-Si production system. It offers unparalleled throughput advantages, and its TurboDisc technology provides superior uniformity and low particle count, which is critical for producing GaN-on-Si wafers. We appreciate the strong support we have received from Veeco, and look forward to this and future collaborations.”
William J. Miller added, “We are gratified that LG Siltron has chosen the K465i, which provides low cost-of-ownership and best-in-class yields, and look forward to supporting LG Siltron as they ramp production. The market for GaN-on-Si power devices continues to grow, and the K465i offers many advantages, such as improved device performance, lower manufacturing costs and increased productivity.”
LG Siltron is an electronics materials manufacturer whose products include epitaxial wafers in 150 mm, 200 mm and 300 mm, and also solar substrates.
