News Article

Laser Development To Commence At Changchun With The Help Of Aixtron

The MOCVD reactor will be used to develop aluminium indium gallium arsenide and gallium indium arsenide phosphide advanced lasers

Aixtron SE has an order for a new MOCVD system from new customer, Changchun University of Science and Technology (CUST) in China. CUST has placed a contract for one Aixtron multi-wafer MOCVD reactor which will be dedicated to the growth of quaternary materials for laser diodes. The order was placed in the fourth quarter of 2011, and delivery will take place in the third quarter of 2012. Aixtron´s local support team will install and commission the new reactor in a state-of-the-art cleanroom facility at CUST in Changchun, Jilin province, China. Liu, Director of epitaxy facilities at CUST, comments, “Aixtron MOCVD systems have a very high reputation worldwide for the development and production of compound semiconductor materials. We received excellent reports of these capabilities from our colleagues at the Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) at the Chinese Academy of Sciences (CAS), who have successfully demonstrated a similar application using Aixtron equipment." "Our team therefore considers the reactor to be a suitable choice for the development of our InGaAlAs and InGaAsP materials systems, which will form an excellent process technology foundation for the fabrication of advanced lasers. Aixtron technology also comes with a responsive local service team, and this will help to ensure smooth and efficient progress when we begin materials development using the new system," he concludes. Founded in 1958 by the Chinese Academy of Sciences, Changchun University of Science and Technology has evolved into a multidisciplinary university with optoelectronics technology as its main focus, along with the integration of optics, mechanics, electronics, computer science and materials science.

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