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Toshiba invests in Bridgelux to make the best 8″ GaN-on-Silicon LEDs

The two firms aim to further accelerate development of the gallium nitride-on-silicon process for LED chips

Just months after they started collaborating, Bridgelux, and Toshiba say they have together achieved the industry’s top class 8” GaN-on-silicon LED square 1.1mm chip emitting 614mW at less than 3.1V at 350mA. Toshiba has also made an equity investment in Bridgelux with the intent to jointly pursue an innovative technology in the Solid State Lighting (SSL) space. This investment will further advance both companies’ efforts in the SSL industry, with the view to boost Bridgelux’s GaN-on-Silicon LED chip technology development efforts based on Toshiba’s advanced silicon process and manufacturing technology development efforts. “Toshiba and Bridgelux have already been engaged in the development of the technology, and the equity investment brings both companies one step closer to a more strategic relationship and achieving our shared goal of driving down the cost of Solid State solutions for the general lighting market,” says Bill Watkins, Bridgelux Chief Executive Officer. “We are pleased to achieve the best-reported 8” GaN-on-Silicon LED performance through our joint development activities with Bridgelux. We will continue to pursue more advanced development targeting commercialisation of the technology ”concludes Makoto Hideshima, Executive Vice President of Semiconductor and Storage Products Company, Corporate Vice President of Toshiba.

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