News Article
SemiSouth brings on 650V 55mΩ SiC JFETs
The fast switching, high current handling and superior thermal properties of silicon carbide devices are ideal for solar inverters, SMPS, PFC circuits, induction heating, UPS and motor drives
SemiSouth says it is delivering the industry's first 650 V SiC JFET power transistors.
The fast switching speeds, large current handling capability combined with the superior thermal properties of SiC are ideal for power electronic applications. These devices employ vertical trench JFET structures .
Jeffrey B. Casady, President/CTO of SemiSouth says, "Customers in markets such as EV drive train, UPS, welding, solar, induction heating have long been asking for SiC switches which are very reliable, cost-effective, & capable of high-efficiency at high power densities. We are proud to be the first company to be able to offer such a product our customers will be able to realise enormous benefits by designing in these class-leading 650 V JFETs."
Dieter Liesabeths, Senior VP Sales & Marketing adds, "This product is significant. Markets where we are already in volume production using our 1200 V switch such as solar and UPS, also require lower-voltage switching at 650 V for efficiency & higher power density solutions where grid voltage or bus voltages are lower. The automotive industry is split on the EV drive train with some customers requiring 1200 V and higher, and others requiring only 650 V. We can now serve these markets even better with power transistor solutions from 650 V through 1700 V."
The 650V / 55mΩ SJDA065R055 SiC JFETs feature a temperature coefficient for ease of paralleling and fast switching with no "tail" current at 1500C. RDSONtypical for these new voltage-controlled devices is 0.044Ω, which exhibit a low gate charge and low intrinsic capacitance.
