News Article
Lithuanian firm Brolis bags €2.5 million for MBE facility
The provider of custom structures grown on gallium arsenide, indium phosphide, gallium antimonide and indium arsenide substrates will use the financing to develop the high-tech infrastructure in the field of compound semiconductor technology
The Lithuanian Ministry of Economy has confirmed that Brolis Semiconductors is to receive a lucrative grant of more than €2.5 million for the development of the high-tech infrastructure in the field of semiconductor technology.
Brolis says the cash it received was the largest sum of money allocated to one company in Lithuania.
“The company is investing the money into the state-of-the-art MBE facility for growth of advanced semiconductor materials, which will be used to create beyond state-of-the-art components for the global market”, says Kristijonas Vizbaras, CTO of Brolis Semiconductors.
MBE reactor
Brolis Semiconductors Ltd. was established in 2011, by Augustinas, Kristijonas and Dominykas Vizbaras. The three brothers specialise in long-wavelength semiconductor lasers and MBE. The manufacturing facility and the company headquarters were established in Vilnius, the capital city of Lithuania.
Brolis provides MBE services for custom structures on GaAs, InP , GaSb and InAs substrates up to 6 inch (150 mm) in diameter. Possible applications include IR detectors, focal plane arrays, laser diodes, quantum cascade lasers, HBTs and Hall sensors.
Brolis Semiconductors also offers both multimode Fabry-Perot and single-mode DFB lasers. Possible applications include various gas sensing, combustion control, environmental monitoring applications.
The company aims to become the leading global provider of complex epitaxial structures based on arsenides and antimonides for the electronic and optoelectronic world market. In particular, the company is focused on long-wavelength optoelectronics. The firm says its MBE expertise has enabled it to deliver the world’s only room-temperature GaSb laser diodes in the wavelength range for 2µm – 3.8 µm range.
