News Article

TriQuint Unleashes New GaN Products On The Defence & Commercial Markets

The new gallium nitride solutions are claimed to increase RF performance and enable smaller circuits, as well as better-performing low voltage and high power systems

TriQuint Semiconductor released four new GaN devices at the IMS / MTT-S Symposium in Montreal, Canada , being held between June 17th and 22nd. TriQuint says its GaN solutions improve RF efficiency, reduce overall costs and enhance system ruggedness.

RF designers attending IMS / MTT-S can access public forums where TriQuint will explore high performance GaN capabilities and ways this technology can enable smaller circuits, as well as better-performing low voltage and high power systems. GaN-based integrated circuits outperform silicon, gallium arsenide and other semiconductor technologies. GaN devices are also seen by the industry as key to future 'green' RF and DC-DC power solutions that can reduce network electrical consumption, enable greater range in electric vehicles or extend smartphone battery life.

"TriQuint is advancing state-of-the-art high frequency / high power GaN research. Our internal product development programs are creating new commercial and defense lower-voltage devices. Today we are announcing four new GaN products enabled by TriQuint's high performance technology leadership," says TriQuint Defence Products and Foundry Services Vice President and General Manager, James L. Klein.

TriQuint has also revealed three new GaN power amplifiers that deliver greater efficiency, wideband coverage and excellent performance for communications, defence and civilian radar. These are the TGA2572-FL (14-16 GHz), now available; as well as the TGA2579-FL (14-15.5 GHz) and the TGA2593-GSG (13-15 GHz), which will be available in July.

TriQuint is also announcing the availability of the T1G6003028-FS, a 30W wideband GaN packaged transistor that can cut the number of driver circuits in a typical power amplifier design by 50%.

TriQuint GaN product innovation will be the focus of a presentation hosted by Richardson RFPD in IMS / MTT-S Booth #1818 at 1pm on June 19th. The firm will lead a GaN product discussion on newly-released RF power amplifiers, switches, transistors and integrated assembly / packaging capabilities.

TriQuint will also be describing its gallium nitride, gallium arsenide, SAW and BAW solutions for networks, defence and aerospace products at IMS / MTT-S 2012 at booth #1815.

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