News Article
Agnitron designs MOCVD flange to improve GaN growth
The firm, which refurbishes MOCVD reactors, has now started to fabricate the upgrade, which has been designed to improve thickness and photoluminescence uniformity of gallium nitride wafers
Agnitron Technology has completed design activities for its proprietary MOCVD Monolithic Dual Flow Gas Injection Flange and has started to fabricate a prototype.
The new MOCVD injection flange was designed as an upgrade for E300 GaNzillas I & II reactors. These are used or refurbished MOCVD GaN reactors, usually originally manufactured by Veeco, Emcore or Aixtron.
The flange is suited for use in the growth of III-nitrides, ZnO and MgZnO but can also be configured for the growth of any material. It can also be used for Atomic Layer Deposition and is compatible with remote plasma sources and induction heating. Device applications include UV LED and HEMT structures.
The component enables adjustable velocity and density matching between alkyls and hydrides. Alkyl and hydride injection is completely isolated and the firm says the solid design makes H2 leakage impossible.
Agnitron says the use of the flange will provide superior thickness and photoluminescence uniformity across wafer and from wafer-to-wafer. Radical disturbances in the boundary layer are now easily prevented by process tuning of alkyl and hydride gases flow velocity and density.
“The Monolithic Dual Flow Gas Injection Flange concept has been a desire for process engineers over the years. Agnitron Technology’s development of the revolutionary flange was in response to this unmet industry need,” says Dennis Stucky, who managed field services for Emcore and Veeco, and is collaborating with Agnitron on several projects.
“We are excited to offer this novel flange design as a solution which will simplify MOCVD processing on existing E300 GaN tools, while simultaneously saving time and reducing waste. Process characterisation after maintenance events will be simplified, saving critical downtime in tuning the process back into specs,” he adds.
Agnitron claims the intricate design flow flange utilises advanced machining and weldment fabrication techniques to provide the most innovative MOCVD injection flange ever built. The enhanced control over alkyl and hydride gas injection enabled by the Agnitron flange is a process improvement with significant benefits for stabilising and enhancing system performance.
The flange is scalable for a range of small to medium size reactors. It is also fully compatible with inductively heated wafer carriers.
Agnitron Technology specialises in developing emerging compound semiconductor material and device technologies into profitable commercial products as well as economical custom MOCVD equipment solutions. The company, based in Eden Prairie, Minnesota, was founded in response to a growing demand for superior performing components for LEDs and high power electronics.
The new MOCVD injection flange was designed as an upgrade for E300 GaNzillas I & II reactors. These are used or refurbished MOCVD GaN reactors, usually originally manufactured by Veeco, Emcore or Aixtron.
The flange is suited for use in the growth of III-nitrides, ZnO and MgZnO but can also be configured for the growth of any material. It can also be used for Atomic Layer Deposition and is compatible with remote plasma sources and induction heating. Device applications include UV LED and HEMT structures.
The component enables adjustable velocity and density matching between alkyls and hydrides. Alkyl and hydride injection is completely isolated and the firm says the solid design makes H2 leakage impossible.
Agnitron says the use of the flange will provide superior thickness and photoluminescence uniformity across wafer and from wafer-to-wafer. Radical disturbances in the boundary layer are now easily prevented by process tuning of alkyl and hydride gases flow velocity and density.
“The Monolithic Dual Flow Gas Injection Flange concept has been a desire for process engineers over the years. Agnitron Technology’s development of the revolutionary flange was in response to this unmet industry need,” says Dennis Stucky, who managed field services for Emcore and Veeco, and is collaborating with Agnitron on several projects.
“We are excited to offer this novel flange design as a solution which will simplify MOCVD processing on existing E300 GaN tools, while simultaneously saving time and reducing waste. Process characterisation after maintenance events will be simplified, saving critical downtime in tuning the process back into specs,” he adds.
Agnitron claims the intricate design flow flange utilises advanced machining and weldment fabrication techniques to provide the most innovative MOCVD injection flange ever built. The enhanced control over alkyl and hydride gas injection enabled by the Agnitron flange is a process improvement with significant benefits for stabilising and enhancing system performance.
The flange is scalable for a range of small to medium size reactors. It is also fully compatible with inductively heated wafer carriers.
Agnitron Technology specialises in developing emerging compound semiconductor material and device technologies into profitable commercial products as well as economical custom MOCVD equipment solutions. The company, based in Eden Prairie, Minnesota, was founded in response to a growing demand for superior performing components for LEDs and high power electronics.
