News Article

Azzurro Simplifies GaN-on-Si LED Growth

The Dresden based firm is marketing 150 mm GaN-on-Silicon templates to LED manufacturers
Azzurro has released a white paper describing the easy migration of LED manufacturing to GaN-on-Silicon.

The company says its 150 mm GaN-on-Silicon templates will lead to very short design-in times.

The schematic below shows a comparison between a sapphire based LED structure and the silicon based template as shown in the firm's white paper.

[Image Courtesy of Azzurro]

The white paper outlines how to overcome the technical hurdles associated with migrating to GaN-on-Silicon. It also covers key achievements possible when using the right technology, details the advantages for the move to GaN-on-Silicon obtainable with templates and shows development solutions to the LED epitaxy engineer.

The detailed data of GaN-on-Silicon products is also revealed regarding high crystalline quality. The described EPD of the described devices is 2 x 108cm-2, with a wavelength of less than 4 nm and bow values of less than 20 μm.

Enabled by Azzurro’s thick GaN-buffer as well as its patented and proprietary strain-engineering technology, these achievements permit the full utilisation of the advantages of GaN-on-Silicon. These include reduced binning due to superior homogeneities among other things.

What's more the large wafer diameter and low bow values allow the use of standard silicon processing lines which are offering cost breakthroughs for wafer processing and back-end manufacturing.

The diagram below shows the typical lattice mismatch and Azzurro buffer technology which compensates for the induced stress.

[Image Courtesy of Azzurro]

Commenting on the huge cost saving opportunities, Markus Sickmoeller, VP Operations at Azzurro Semiconductors says, “Our plug-and-play approach, supported by our application note and engineering support assures a smooth migration from the legacy materials towards GaN-on-Silicon with easy to process, larger wafer sizes in standard silicon processing lines at much lower costs."

As part of easing the move to GaN-on-Silicon, Azzurro is delivering standard migration packages to customers which include dedicated engineering support from its team of experts.

There are a number of players in the GaN-on-Silicon market.

Toshiba together with Bridgelux's technology is launching a 200mm (or ~ 8") pilot line in north Japan in October. UK based Plessey is another new contender, and is developing a 150mm GaN-on-Silicon process with the help of Cambridge University spin-off CamGaN. With its massive Aixtron CRIUS II-XL reactor which is capable of growing 7 x 150mm (or ~ 6") wafers, which has only recently been installed, Plessey is aiming at volume manufacturing in the next few months.

EpiGaN, based in Belgium and set up by former imec researchers, is another spin-off working  on 8 inch GaN-on-Silicon. Imec itself is involved in growing 8" GaN-on-Silicon for both power devices and LEDs with investments from major industrial partners such as Samsung.

Also in the last week, Veeco announced that Nantong Tongfang Semiconductor has received one of its TurboDisc K465i MOCVD systems for research of GaN-on-silicon high brightness LEDs. The system was delivered to Tongfang’s new LED Technology Centre in Nantong, China and is capable of growing up to 8 inch wafers.These are just a handful of companies who are investing in the GaN-on-Silicon market.

Azzurro's white paper's aim is to support the LED industry’s move to GaN-on-Silicon.

The publication is available for download on Azzurro’s website via the link:

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.



Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
Live Event