News Article
Microsemi SiC Schottky diodes enhance efficiency
The firm's latest silicon carbide devices are optimised for high power, high voltage industrial applications
Hot on the heels of Fairchild Semiconductor's announcement earlier this week, Microsemi Corporation is introducing a new family of 1200V devices based on SiC materials.
Fairchilds' Bipolar Junction Transistors are designed for power conversion applications, while Microsemi is using its SiC Schottky diodes for use in solar inverters, welding, plasma cutters, fast vehicle charging, oil exploration, and other high power, high voltage applications.
SiC offers a number of benefits compared to silicon, including a higher breakdown field strength and improved thermal conductivity. These attributes allow designers to create devices with better performance characteristics encompassing zero reverse recovery, temperature independent behaviour, higher voltage capability, and higher temperature operation to achieve new levels of performance, efficiency and reliability.
In addition to the inherent benefits of the device, Microsemi claims it is the only manufacturer to offer a SiC Schottky diode in a large surface mount backside solderable D3 package allowing designers to achieve increased power density and lower manufacturing costs.
"We applied our more than 25 years of power semiconductor device design and manufacturing know-how to deliver a family of SiC diodes that offers unparalleled levels of performance, reliability and overall quality," comments Russell Crecraft, general manager of Microsemi's Power Products Group. "Next-generation power conversion systems require higher power densities, higher operating frequencies and higher efficiencies - and our new silicon carbide devices help system designers meet those needs."
The new 1200V SiC Schottky diode product portfolio includes:
APT10SCD120BCT (1200V, 10A, common cathode TO-247 package)
APT20SCD120B (1200V, 20A, TO-247 package)
APT30SCD120B (1200V, 30A, TO-247 package)
APT20SCD120S (1200V, 20A, D3 package)
APT30SCD120S (1200V, 30A, D3 package)
Microsemi's new SiC Schottky diodes are now in production.
Fairchilds' Bipolar Junction Transistors are designed for power conversion applications, while Microsemi is using its SiC Schottky diodes for use in solar inverters, welding, plasma cutters, fast vehicle charging, oil exploration, and other high power, high voltage applications.
SiC offers a number of benefits compared to silicon, including a higher breakdown field strength and improved thermal conductivity. These attributes allow designers to create devices with better performance characteristics encompassing zero reverse recovery, temperature independent behaviour, higher voltage capability, and higher temperature operation to achieve new levels of performance, efficiency and reliability.
In addition to the inherent benefits of the device, Microsemi claims it is the only manufacturer to offer a SiC Schottky diode in a large surface mount backside solderable D3 package allowing designers to achieve increased power density and lower manufacturing costs.
"We applied our more than 25 years of power semiconductor device design and manufacturing know-how to deliver a family of SiC diodes that offers unparalleled levels of performance, reliability and overall quality," comments Russell Crecraft, general manager of Microsemi's Power Products Group. "Next-generation power conversion systems require higher power densities, higher operating frequencies and higher efficiencies - and our new silicon carbide devices help system designers meet those needs."
The new 1200V SiC Schottky diode product portfolio includes:
APT10SCD120BCT (1200V, 10A, common cathode TO-247 package)
APT20SCD120B (1200V, 20A, TO-247 package)
APT30SCD120B (1200V, 30A, TO-247 package)
APT20SCD120S (1200V, 20A, D3 package)
APT30SCD120S (1200V, 30A, D3 package)
Microsemi's new SiC Schottky diodes are now in production.
