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Thursday 5th June 2014
The UEFC-4900 will bring the Auratus deposition process enhancement methodology benefits to Plessey's MaGIC LED production line
Wednesday 4th June 2014
The gallium nitride modules have a power added efficiency of 71.2 percent
Wednesday 4th June 2014
The UK headquartered firm will use Comprel Srl to distributeits GaN-on-silicon LED products
Wednesday 4th June 2014
Digi-Key's reach in the global electronic marketplace suits SunLEDs broad line of LED products and packages
Wednesday 4th June 2014
The pioneer of blue/white gallium nitride-based LEDs on silicon substrates will be describing its latest developments at LIGHTFAIR International
Wednesday 4th June 2014
The gallium nitride satellite devices are suited for use in communication terminals
Info
Wednesday 4th June 2014
The firm says this is the first frameless copper-indium-selenide module with back-rails admitted for BIPV
Wednesday 4th June 2014
The compound semiconductor LEDs offer a portable system that provides a uniform, instant on and a 30 mW/cm2 field of narrow band UVA irradiation of 365nm
Tuesday 3rd June 2014
Researchers say a II-V semiconductor could yield practical devices with the same electronic properties as 2-D graphene
Tuesday 3rd June 2014
The company will use the Aixtron reactor to grow gallium nitride on silicon carbide RF power devices
Tuesday 3rd June 2014
The III-nitride based LEDs will be showcased at the 2014 Guangzhou International Lighting Exhibition
Tuesday 3rd June 2014
The firm has begun volume production CdSe tetrapod quantum dots
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Tuesday 3rd June 2014
The manufacturer of III-nitride LEDs new product can improve energy savings, performance and aesthetics of LED lighting systems
Tuesday 3rd June 2014
With an increased focus on integrated power solutions, CdTe cell manufacturer First Solar is expanding in Europe
Tuesday 3rd June 2014
Suited for compound semiconductor applications, the firm's deposition process provides methodology benefits to 100 and 150mm wafer production lines
Tuesday 3rd June 2014
The firms have begun mass producing 150mm silicon carbide. They aim to dramatically lower the cost, improve reliability and expand the availability of SiC power diodes and MOSFETs
Monday 2nd June 2014
The SPEED project aims to make a step change in the efficiency of power generation, distribution and transmission through the use of SiC as a higher-performing alternative to silicon
Monday 2nd June 2014
With more than 90 CRI, the enhanced colour reproducibility will make the new products more attractive to lighting designers
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Monday 2nd June 2014
The gallium nitride devices are claimed to offer long life, reduced size and weight and better efficiencies than their travelling wave tube counterparts
Monday 2nd June 2014
The acquisition strengthens MKS' position in the vacuum gauge market. The firm's primary served markets are manufacturers of capital equipment for semiconductor devices, and for other thin film applications including LEDs and solar cells
Monday 2nd June 2014
The III-nitride based LEDs for downlights and outdoor/industrial fixtures target a CDM of 70 - 100W luminaire equivalent
Monday 2nd June 2014
Substituting the GaAs-based cathode with a GaInP alloy in the tunnel-junction results in a 1.3 percent increase in solar cell efficiency in the triple junction cell and allows operation at 15,000 suns
Friday 30th May 2014
The SiC devices are suited for use in server power supplies and power conditioners for photovoltaic power generation systems
Friday 30th May 2014
The series includes what Cree says is the industry’s first 300W, 2.7 GHz plastic packaged gallium nitride telecom transistor. The devices are designed to enable higher data rate telecom systems

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