Innoscience to talk about the cost benefits of GaN
Company to focus on GaN's price competitiveness with silicon at PCIM
Innoscience will demonstrate its GaN technology at the upcoming PCIM conference and exhibition (Nuremberg, June 11-13), and focus on its price competitiveness with silicon.
On Thursday 13th June Denis Marcon, general manager Europe, Innoscience, will give a talk, ‘GaN power HEMTs: reliable, price-competitive and ready to enhance power conversion solutions,' to show how by using economies of scale and 8-inch wafers, Innoscience is providing price-competitive GaN power devices.
Innoscience will show its portfolio covering 30V to 700V rated GaN power devices, including discrete (InnoGaN), integrated with driver and protection (SolidGaN), and bi-directional (V-GaN) devices as well as GaN gate drivers.
There will be also multiple demos on the stand. These include: 200W LED GaN driver that is 50 percent smaller and thinner than its silicon counterpart; 140W-200W All GaN AC-DC power converter that features InnoGaN at the primary and at the secondary side; 1kW inverter for BLDC motors; 4.2kW PSU that are 50 percent smaller and more efficient (80+ Titanium) than the silicon counterpart; 2kW Solar PV microinverter; 300W ultra high density TV PSU; 2.4kW bi-directional DC-DC converter; 1kW 48V-12V DC-DC converter with high power density (70 percent smaller than in silicon); and InnoGaN for e-bikes with compact 240W charger and 3-phase motor driver.
