Onsemi unveils power solution for data centres
With T10 PowerTrench family and EliteSiC 650V devices, data centres can reduce power losses by an estimated 1 percent
Onsemi says its latest generation T10 PowerTrench family and EliteSiC 650V MOSFETs create a solution that offers unparalleled efficiency and high thermal performance in a smaller footprint for AI data centres.
To process one AI-supported request, energy is converted four times from the grid to the processor, which can result in an energy loss of approximately 12 percent. Using the T10 PowerTrench family and EliteSiC 650V solution, data centres are able to reduce power losses that occur by an estimated 1 percent, according to Onsemi. If implemented in data centres globally, the solution could reduce energy consumption by 10 TWh annually (the equivalent of the energy required to fully power nearly one million homes per year).
“AI and electrification are reshaping our world and skyrocketing power demands. Accelerating innovation in power semiconductors to improve energy efficiency is key to enabling these technological megatrends. This is how we power the future responsibly,” said Simon Keeton, group president, Power Solutions Group, Onsemi.
Compared to the previous generation, EliteSiC 650V MOSFETs have half the gate charge and both the energy stored in output capacitance (Eoss) and the output charge (Qoss) are reduced by 44 percent. With no tail current during turn-off and superior performance at high temperatures, they can also reduce switching losses compared to super junction (SJ) MOSFETs, says Onsemi. This allows customers to downsize system components while increasing the operating frequency, resulting in an overall reduction in system costs.
Separately, the T10 PowerTrench family is engineered to handle high currents, crucial for DC-DC power conversion stages, and offers increased power density and superior thermal performance in a compact footprint. This is achieved through a shield gate trench design, with a low gate charge and an RDS (on) of less than 1 milliohm. Additionally, the soft recovery body diode and lower Qrr effectively minimises ringing, overshoots, and electrical noise to ensure optimal performance, reliability, and robustness under stress.
The T10 PowerTrench family meets the standards required for automotive applications. The combined solution meets the Open Rack V3 (ORV3) base specification.
