Robust CMOS‑compatible GaN‑on‑Si MIS‑HEMTs
At IRPS 2026 (22nd to 26th March), a forum for new and original research in microelectronics reliability, CEA‑Leti will present a number of papers including one of the thermal robustness of a CMOS‑Compatible GaN‑on‑Si MIS‑HEMT.
Luca Nyssens will describe how 1,400 hour, up‑to‑375 °C unbiased storage tests on 0.15 µm SiN/InAlN/GaN MIS‑HEMTs (CMOS‑compatible) show only modest Vth shift (≈‑200 mV), ~20 percent contact‑resistance rise, and small drops in Id,s and gm, max.
Microscopy confirms no side‑wall interdiffusion thanks to a refractory alloy gate. The devices remain electrically stable at extreme temperatures, proving GaN power blocks can be monolithically integrated on silicon for high‑temperature automotive or aerospace electronics.
Other papers at the conference will cover FD SOI, GaN, BEOL reliability, and low temperature platforms enabling 3D sequential integration.
“These presentations reflect CEA-Leti’s depth in microelectronic reliability—from low-temperature integration and advanced materials analysis to physics-based modeling and design-level mitigation,” said Olivier Faynot, director of CEA-Leti's Silicon Components Department and IEEE Fellow.
“By deepening understanding of key degradation mechanisms and circuit-level constraints, our teams provide practical insight that accelerates the industrial readiness of GaN, FD-SOI, and 3D sequential technologies.”
