SiC patent activity remains dynamic
Patent activity in SiC technology remained particularly dynamic during the first quarter of 2026, both upstream in substrates and epitaxial wafers and downstream in power devices and modules, according to KnowMade's latest research.
More than 460 new patent publications were published during Q1 2026, describing more than 350 new inventions related to the technological development of SiC power devices and SiC power modules. The top 15 IP players contributed nearly 50 percent of the quarter’s IP activity, confirming the strategic concentration of patenting efforts among leading companies active in SiC power electronics.
The geographic distribution of patent filings also highlights the central role of China in the current SiC technology patent landscape. During Q1 2026, patenting activity for SiC power devices and modules was strongly oriented toward China, with 290 new patent applications shown in the country-level filing analysis, followed by the United States, Japan, Europe, South Korea and Taiwan. Among the top 15 patent applicants, filing efforts were concentrated in China, the USA and Japan.
Foreign players such as Toshiba and Infineon are actively protecting their inventions in China, while leading Chinese patent applicants, including Global Power Technology, BYD and Jilian Automotive Electronics, remain focused on the domestic territory. This confirms that China is not only a major market for SiC technology, but also an increasingly dense innovation and IP protection environment.
The upstream part of the SiC technology value chain also showed significant patent activity in Q1 2026. More than 320 new patent publications were published during the quarter, describing nearly 250 new inventions related to the technological development of SiC substrates and SiC epitaxial wafers.
The top 12 IP players contributed to nearly 40 percent of the quarter’s IP activity, indicating a competitive but still diversified patent landscape. TankeBlue and Wolfspeed led IP activity in the bulk SiC and bare wafers segment, while ASM International and its Italian subsidiary LPE led patent filings related to SiC epitaxy, alongside Resonac, another well-established player in this segment.
The geographic patenting activity for SiC substrates and epitaxial wafers also confirms China’s strong position in the current SiC technology patent landscape. In Q1 2026, the country-level filing analysis identified 202 new patent applications in China, followed by the USA, Japan, Europe, Taiwan and South Korea. Among the top 12 patent applicants, filings were particularly focused on China, the USA and Japan.
Foreign players such as Resonac, ASM and Toshiba are actively protecting their inventions in China, while leading Chinese patent applicants continue to focus strongly on their domestic market. KnowMade says this patenting behaviour illustrates the strategic importance of China in the upstream SiC supply chain, from bulk crystal growth to epitaxy and wafer preparation.
