Watkins-Johnson Introduces 5.8 GHz/3.5 GHz High Dynamic Range GaAs Amplifier
Internally Matched to 50 Ohms for Simplified Design; Hermetically Sealed in Metal Ceramic Packages for High Reliability
November 8, 1999
The Electronic Device Group of Mitsubishi Electronics America, Inc., today announced the sample availability of a family of gallium-arsenide (GaAs) field effect transistors (FETs) for C-band Wireless Local Loop power amplifiers that operate in the 3.4- to 3.6-GHz frequency band. The family demonstrates high linearity and low IM3 (third-order intermodulation) distortion, and is input-output, internally matched to 50 ohms to simplify design. The GaAs FETs are hermetically sealed in metal ceramic packages for excellent reliability in all applications. The family of devices are optimized to operate in Class A mode and intended for use in the driver and output amplifier stages.
"High linearity performance coupled with low IM3 distortion values is a key strength of Mitsubishi s entire family of Internally Matched GaAs FETs," said Skyler Child, strategic marketing manager for microwave/RF products at Mitsubishi Electronics America. "This latest series of devices aimed at 3.4- to 3.6-GHz Wireless Local Loop applications will help customers realize designs for their high-capacity high-bandwidth applications."
The family offers high output power at 1 dB gain compression (P1dB) with low distortion. For example, the MGFC36V3436, MGFC39V3436, MGFC42V3436, MGFC44V3436, and MGFC45V3436A devices offer typical P1dB power outputs ranging from 4 watts up to 30 watts, respectively. The IM3 distortion for the family is quite low - typically -45 dBc at power outputs ranging from +25 dBm for the MGFC36V3436 device to +34.5 dBm for the MGFC45V3436A device.
Availability
Mitsubishi s 3.4- to 3.6-GHz Internally Matched GaAs FETs for Wireless Local Loop applications are now in production. Sample quantities are now being provided from stock. The lead-time for large production volumes ranges from 8 to 12 weeks.
About Mitsubishi Electric and Mitsubishi Electronics America
Mitsubishi Electric Corporation manufactures a diverse range of microwave and RF semiconductors for linear, low-noise and high-power communications applications, including satellite and terrestrial transmitters and receivers, marine and vehicular mobile radios, cellular phones and subscriber units. The company produces gallium arsenide (GaAs) FETs, MICs, MMICs and HEMTs; silicon RF power transistors and modules; and surface acoustic wave (SAW) filters for the industrial and consumer markets. Mitsubishi markets its microwave and RF semiconductors in North America through the Electronic Device Group of Mitsubishi Electronics America.
Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electronics America Inc., are world-class suppliers of semiconductors and electronic products for computers, communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including embedded DRAM/flash/SRAM, ASIC, ASSP, MCU, discrete memory, graphics, microwave/RF, optoelectronic, storage, and flat-panel display products. Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com.
Contact: Mitsubishi Electronics America Inc. John Garner, (408) 774-3191, garner_john@edg.mea.com KVO Public Relations, Julianne Whitelaw, (650) 888-9285, julianne_whitelaw@kvo.com
Mitsubishi ElectronicsAmerica Inc. John Garner, (408) 774-3191, garner_john@edg.mea.com
KVO Public Relations, Julianne Whitelaw, (650) 888-9285, julianne_whitelaw@kvo.com
E-mail: julianne_whitelaw@kvo.com
Web site: http://www.mitsubishichips.com
