News Article
Transphorm 600 V GaN-on-Silicon devices gain JEDEC qualification
The firm believes this is a major milestone for GaN power electronics as JEDEC qualification of gallium nitride-on-silicon. It will enable mass adoption price points for devices providing dramatically improved power efficiency
Transphorm has announced its complete series of GaN on silicon transistors and diodes, are the world’s first JEDEC-qualified 600V GaN device platform.
This marks a significant milestone in the broad adoption of GaN-based power electronics in power supplies and adapters, PV inverters for solar panels, motor drives, as well as power conversion for electric vehicles.
Based on Transphorm’s patented EZ-GaN technology, the TPH3006PS GaN high electron mobility transistor (HEMT) combines low switching and conduction losses to reduce energy loss by 50 percent compared to conventional silicon-based power conversion designs.
The TO-220-packaged GaN transistor features low on-state resistance (RDS(on)) of 150 milliohms (mΩ), low reverse-recovery charge (Qrr) of 54 nanocoulombs (nC) and high-frequency switching capability - all of which result in more compact, lower cost systems.
Also available in industry-standard TO-220 packages, the TPS3410PK and TPS3411PK GaN diodes offer 6A and 4A operating currents, respectively, with a forward voltage of 1.3V. In addition, three application kits - PFC (TDPS400E1A7), Daughter Board (TDPS500E0A) and Motor Drive (TDMC4000E0I) - are available for rapidly benchmarking the in-circuit performance of Transphorm’s products.
“Solidifying its leadership position in high-voltage GaN power conversion solutions, Transphorm has accomplished the first qualification of 600V GaN devices on silicon substrates,” says Primit Parikh, President of Transphorm.
“This is critically important because it allows manufacturers to access the energy savings from our GaN transistor and diode products with the cost benefits of silicon. The introduction of the Total GaN family dispels the myth that qualification of high-voltage GaN on silicon is not possible, and enables the introduction of new power products in the marketplace that are dramatically more efficient compared to silicon-based products. Transphorm is today driving the next power standard,” he continues to point out.
Transphorm’s EZ-GaN platform can reduce power system size, increase energy density and deliver high efficiencies across the grid. For manufacturers looking for a low-risk roadmap to the next generation of power conversion technology, EZ-GaN provides a cost-effective, customisable and easy-to-use solution ready for commercial scale.
For approved customers, the TPH3006PS HEMT device is available for sale at a price of $5.89 each in 1,000 quantities. The TPS3410PK and TPS3411PK diodes are priced at $2.06 and $1.38, respectively, also in 1,000-piece quantities.
This marks a significant milestone in the broad adoption of GaN-based power electronics in power supplies and adapters, PV inverters for solar panels, motor drives, as well as power conversion for electric vehicles.
Based on Transphorm’s patented EZ-GaN technology, the TPH3006PS GaN high electron mobility transistor (HEMT) combines low switching and conduction losses to reduce energy loss by 50 percent compared to conventional silicon-based power conversion designs.
The TO-220-packaged GaN transistor features low on-state resistance (RDS(on)) of 150 milliohms (mΩ), low reverse-recovery charge (Qrr) of 54 nanocoulombs (nC) and high-frequency switching capability - all of which result in more compact, lower cost systems.
Also available in industry-standard TO-220 packages, the TPS3410PK and TPS3411PK GaN diodes offer 6A and 4A operating currents, respectively, with a forward voltage of 1.3V. In addition, three application kits - PFC (TDPS400E1A7), Daughter Board (TDPS500E0A) and Motor Drive (TDMC4000E0I) - are available for rapidly benchmarking the in-circuit performance of Transphorm’s products.
“Solidifying its leadership position in high-voltage GaN power conversion solutions, Transphorm has accomplished the first qualification of 600V GaN devices on silicon substrates,” says Primit Parikh, President of Transphorm.
“This is critically important because it allows manufacturers to access the energy savings from our GaN transistor and diode products with the cost benefits of silicon. The introduction of the Total GaN family dispels the myth that qualification of high-voltage GaN on silicon is not possible, and enables the introduction of new power products in the marketplace that are dramatically more efficient compared to silicon-based products. Transphorm is today driving the next power standard,” he continues to point out.
Transphorm’s EZ-GaN platform can reduce power system size, increase energy density and deliver high efficiencies across the grid. For manufacturers looking for a low-risk roadmap to the next generation of power conversion technology, EZ-GaN provides a cost-effective, customisable and easy-to-use solution ready for commercial scale.
For approved customers, the TPH3006PS HEMT device is available for sale at a price of $5.89 each in 1,000 quantities. The TPS3410PK and TPS3411PK diodes are priced at $2.06 and $1.38, respectively, also in 1,000-piece quantities.
