News Article
First mass-produced SiC module without a Schottky diode
Japanese firm Rohm has reduced power loss in its new silicon carbide device, making it ideal for 1200V/180A inverters
Rohm has started mass-production of a 1200V/180A-rated SiC MOS module BSM180D12P2C101 for inverters/converters used in industrial equipment, photovoltaic power conditioners and the like.
BSM180D12P2C101
The firm says this new module is the first to incorporate a power semiconductor comprised of just a SiC MOSFET, increasing the rated current to 180A for broader applicability while contributing to lower power consumption and greater compactness.
Next-generation SiC MOSFET technology minimises conduction degradation of the body diode, eliminating the need for diode rectification. This makes it possible to increase the mounting area for higher current handling capability while maintaining the same compact form factor.
What's more, by improving processes and device structures related to crystal defects Rohm was able to overcome all problems related to reliability, including that of the body diode.
Switching characteristics are maintained using a simple MOS structure without a Schottky Barrier Diode. And unlike silicon IGBTs used in general-purpose inverters, no tail current is generated, reducing loss by more than 50 percent.
Also, switching frequencies over 50kHz are supported, which Rohm says is impossible with silicon IGBTs. This contributes to smaller, lighter peripheral devices.
General-purpose silicon IGBT devices are not capable of conduction in the reverse direction.
In contrast, the body diode in Rohm's SiC MOSFET always conducts in reverse. And depending on the Gate signal input the MOSFET can operate in either direction for lower ON resistance or using just the diode. These reverse direction conduction characteristics enable a high efficiency synchronous rectification in the 1000V range - higher than diode rectification.
Another positive is that clarifying the mechanism by which defects are spread based on body diode conduction makes it possible to minimise the primary factors through process and device construction.
With general-purpose products the ON resistance increases significantly after 20 hours. In contrast, Rohm says its new module ensures no ON resistance increases - even after more than 1000 hours.
BSM180D12P2C101
The firm says this new module is the first to incorporate a power semiconductor comprised of just a SiC MOSFET, increasing the rated current to 180A for broader applicability while contributing to lower power consumption and greater compactness.
Next-generation SiC MOSFET technology minimises conduction degradation of the body diode, eliminating the need for diode rectification. This makes it possible to increase the mounting area for higher current handling capability while maintaining the same compact form factor.
What's more, by improving processes and device structures related to crystal defects Rohm was able to overcome all problems related to reliability, including that of the body diode.
Switching characteristics are maintained using a simple MOS structure without a Schottky Barrier Diode. And unlike silicon IGBTs used in general-purpose inverters, no tail current is generated, reducing loss by more than 50 percent.
Also, switching frequencies over 50kHz are supported, which Rohm says is impossible with silicon IGBTs. This contributes to smaller, lighter peripheral devices.
General-purpose silicon IGBT devices are not capable of conduction in the reverse direction.
In contrast, the body diode in Rohm's SiC MOSFET always conducts in reverse. And depending on the Gate signal input the MOSFET can operate in either direction for lower ON resistance or using just the diode. These reverse direction conduction characteristics enable a high efficiency synchronous rectification in the 1000V range - higher than diode rectification.
Another positive is that clarifying the mechanism by which defects are spread based on body diode conduction makes it possible to minimise the primary factors through process and device construction.
With general-purpose products the ON resistance increases significantly after 20 hours. In contrast, Rohm says its new module ensures no ON resistance increases - even after more than 1000 hours.
