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Monday 13th August 2012
The firm's new sales and service office, based in Instanbul, is targeting additional customers in the large expanding Turkish economy
Monday 13th August 2012
The firm is releasing its EnerPlex for the Galaxy S III following the successful debut of EnerPlex for the Apple iPhone 4
Monday 13th August 2012
The firm's ultra-high efficiency power amplifiers support the highly anticipated LTE version of Samsung's Galaxy S3 smartphone
Monday 13th August 2012
Non-residential building mount applications now account for more than 36 percent of PV projects
Monday 13th August 2012
Using gallium arsenide / aluminium gallium arsenide based quantum well structures, scientists have demonstrated new possibilities of increasing energy efficiency in electronics
Friday 10th August 2012
The firm is currently providing storage and transportation for Optogan's nitride based LED products. Logwin will also soon be providing incoming goods checking and quality inspections, the assembly of lighting units and returns processing
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Friday 10th August 2012
The move will allow Emcore to focus its efforts on its arsenide based multi-junction solar cell technology for both space and terrestrial power applications
Friday 10th August 2012
The order is for several systems for vacuum coating, selenisation and wet-chemical processing from South African university spin off PTIP
Friday 10th August 2012
The amplifiers, one of which uses both gallium arsenide and gallium nitride technology, have been awarded for their novel cable technology
Friday 10th August 2012
The firm has been granted four patents related to "Chip-in-Fixture" technology which promises to lower LED fixture costs to below that of fluorescent lighting. This is hoped to pave the way to making LED the dominant lighting choice
Thursday 9th August 2012
The firm's disruptive gallium nitride technology is to be developed for LEDs, laser diodes, and power electronics
Thursday 9th August 2012
On a visit to Turkey, Optogan President and CEO presented the X10 model prototype gallium nitride LED chip which is capable of producing between 10 to 500W of light
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Thursday 9th August 2012
The copper indium gallium selenide solar panel manufacturer is reorganising its workforce in order to enable cost reductions and renewed development
Thursday 9th August 2012
The firm's depletion mode HEMT microwave pulsed power transistor features broadband operation at +50 V. The gallium nitride device is suited to civilian and military pulsed radar applications
Thursday 9th August 2012
The new addition, Roderick Nelson, was responsible for the development and deployment of the first 3G networks in the U.S.
Thursday 9th August 2012
Growing infrared detectors on large area substrates would enhance capabilities in astronomy, remote detection and medical diagnosis
Wednesday 8th August 2012
The dynamics of the market may be changing but the growth of the photovoltaic (PV) industry in 2011 reached record levels according to a new EPIC report
Wednesday 8th August 2012
Although LED lighting adoption continues to increase, the firm has found that the macroeconomic environment is impacting its growth outlook in the near future
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Wednesday 8th August 2012
According to a new report, “Status of the LED Industry,” a cost reduction per lumen of packaged LEDs by a factor ten is necessary for mass LED acceptance to occur in lighting
Wednesday 8th August 2012
The solar firm, which manufactures III-V multijunction cells, has been acknowledged by the French ministry and been awarded eight projects
Tuesday 7th August 2012
Temescal have confirmed they will be platinum sponsors at the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4h & 5th March 2013.
Tuesday 7th August 2012
The high-resolution indium gallium arsenide camera is able to capture images in smoke, fog and haze for use surveillance
Tuesday 7th August 2012
The firm has released samples of its new gallium arsenide detectors which operate over the 71 to 76 GHz and 81 to 86 GHz E-band frequency bands
Tuesday 7th August 2012
The expansion will enable the production of high purity trimethyl gallium and trimethyl aluminium used in the MOCVD manufacture of compound semiconductor wafers

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