Mitsubishi samples SiC-MOSFET die for xEVs
Mitsubishi Electric will shortly begin shipping samples of a SiC MOSFET bare die for use in drive-motor inverters of electric vehicles (EVs), plug-in hybrid vehicles (PHEVs) and other electric vehicles (xEVs).
The company says this first standard-specification SiC-MOSFET will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles.
The device combines proprietary trench chip structures and manufacturing technologies. The trench technology reduces power loss by about 50 percent compared to conventional planar SiC-MOSFETs, according to Mitsubishi. Manufacturing methods, such as a gate oxide film process that suppresses fluctuations in power loss and on-resistance, help devices to achieve long-term stability.
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