News Article
Fujitsu to power ahead with GaN-on-Si chip shipments
The firm's gallium nitride device enables smaller, more efficient power supply products for use in telecommunications, industrial equipment, automotive, and other applications
Fujitsu Semiconductor Limited (Fujitsu) has released the MB51T008A, a silicon substrate-based GaN power device that has a breakdown voltage of 150 V.
MB51T008A
The new device, which enables normally-off operations, is capable of achieving roughly one half the figure of merit (FOM) of silicon-based power devices with an equivalent breakdown voltage.
With the addition of the new product to its line up, Fujitsu will be able to offer GaN devices that contribute to smaller, more efficient power supplies for a wide range of fields, from home appliances and ICT equipment to automotive applications.
Fujitsu says the MB51T008A has a number of advantages.
Firstly, the on-state resistance of 13 mΩ and total gate charge of 16 nC enables roughly half the FOM of silicon-based power devices with an equivalent breakdown voltage. Also, minimal parasitic inductance and high-frequency operations are enabled through the use of WLCSP packaging.
In addition, a proprietary gate design enables normally-off operations and the device is ideal for high-side switches and low-side switches in DC-DC converters employed in power supplies for data communications equipment, industrial products, and automobiles.
Finally, because it supports a higher switching frequency in power supply circuits, power supplies can achieve improvements in overall size and efficiency.
Fujitsu is also developing models with breakdown voltages of 600 V and 30 V to help enable enhanced power efficiency in a wide range of product areas.
These GaN power devices are based on HEMT (High Electron Mobility Transistor) technology, which Fujitsu Laboratories has been developing since the 1980s.
Building on its IP portfolio of the technology, Fujitsu hopes to rapidly bring its GaN power devices to market. The company also plans to build partnerships with customers across a wide range of industries, in order to expand its business further.
The MB51T008A and other Fujitsu GaN products will be on display at "TECHNO- FRONTIER 2013," to be held from July 17th to 19th at Tokyo Big Sight in Tokyo, Japan.
The company also plans to highlight performance improvements in its GaN power devices with 600 V breakdown voltages, as well as prototypes and test data of a 2.5 kW power supply employing a GaN power device, a high-frequency PFC, and a high-frequency DC-DC converter.
Fujitsu will begin sample shipments in July 2013, with volume production scheduled to begin in 2014.
MB51T008A
The new device, which enables normally-off operations, is capable of achieving roughly one half the figure of merit (FOM) of silicon-based power devices with an equivalent breakdown voltage.
With the addition of the new product to its line up, Fujitsu will be able to offer GaN devices that contribute to smaller, more efficient power supplies for a wide range of fields, from home appliances and ICT equipment to automotive applications.
Fujitsu says the MB51T008A has a number of advantages.
Firstly, the on-state resistance of 13 mΩ and total gate charge of 16 nC enables roughly half the FOM of silicon-based power devices with an equivalent breakdown voltage. Also, minimal parasitic inductance and high-frequency operations are enabled through the use of WLCSP packaging.
In addition, a proprietary gate design enables normally-off operations and the device is ideal for high-side switches and low-side switches in DC-DC converters employed in power supplies for data communications equipment, industrial products, and automobiles.
Finally, because it supports a higher switching frequency in power supply circuits, power supplies can achieve improvements in overall size and efficiency.
Fujitsu is also developing models with breakdown voltages of 600 V and 30 V to help enable enhanced power efficiency in a wide range of product areas.
These GaN power devices are based on HEMT (High Electron Mobility Transistor) technology, which Fujitsu Laboratories has been developing since the 1980s.
Building on its IP portfolio of the technology, Fujitsu hopes to rapidly bring its GaN power devices to market. The company also plans to build partnerships with customers across a wide range of industries, in order to expand its business further.
The MB51T008A and other Fujitsu GaN products will be on display at "TECHNO- FRONTIER 2013," to be held from July 17th to 19th at Tokyo Big Sight in Tokyo, Japan.
The company also plans to highlight performance improvements in its GaN power devices with 600 V breakdown voltages, as well as prototypes and test data of a 2.5 kW power supply employing a GaN power device, a high-frequency PFC, and a high-frequency DC-DC converter.
Fujitsu will begin sample shipments in July 2013, with volume production scheduled to begin in 2014.
