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Monday 22nd May 2017
Careful control of epitaxy, in part through facet engineering, can create a semi-polar GaN template on sapphire that is ideal for the mass-production of ultra-efficient LEDs
Wednesday 17th May 2017
Simple approach highlights the benefits of nitridation
Wednesday 10th May 2017
Advancing precision laser optics with substrate-transferred epitaxial films
Wednesday 10th May 2017
ENTRY: Hybrid InGaAs/SiGe CMOS Circuits
Tuesday 9th May 2017
Selective epitaxy can scale field-effect transistors featuring InGaAs and SiGe channels to small enough dimensions for next-generation CMOS
Wednesday 3rd May 2017
ENTRY: PlasmaPro100 Polaris Etch System
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Thursday 27th April 2017
A true appreciation of the performance of a UVC LED requires an understanding of its temperature dependent output power and its spectral profile
Wednesday 26th April 2017
ENTRY: Element Six TM200
Monday 24th April 2017
ENTRY: RF Fusion Portfolio
Wednesday 12th April 2017
Distributor Mouser Electronics accused of infringing high power LED technology patent
Friday 3rd March 2017
For phosphor-pumped white-light sources, switching from LEDs to lasers increases efficiency, lengthens lifetime and yields highly collimated beamsBY FAIZ RAHMAN FROM OHIO UNIVERSITY
Thursday 2nd March 2017
LEDs are ideal for horticultural lighting, combining high efficiency with the opportunity to target a spectral range. Sanan has a 30 percent share of the Chinese market for horticultural lighting. Chipmakers are chasing better margins via greater economies of scale, carefully targeted product portfolios and superior device performance
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Thursday 2nd March 2017
Diminishing droop and enhancing extraction efficiency help to build better, brighter LEDsBY ASHISH TANDON, TONI LOPEZ, OLEG SHCHEKIN, ISAAC WILDESON, PARIJAT DEB, HENRY CHOY AND JY BHARDWAJ FROM LUMILEDS
Wednesday 1st March 2017
Merits of the high-voltage SiC MOSFET include low switching losses and a high operating temperature. But is this transistor sufficiently rugged and reliable for widespread deployment?BY MUNAF RAHIMO FROM ABB SWITZERLAND LTD SEMICONDUCTORS
Wednesday 1st March 2017
Leaving California for Cardiff is a price worth paying for taking the top job at the Institute for Compound SemiconductorsBY RICHARD STEVENSON
Wednesday 1st March 2017
Compositional fluctuations in InGaN alloys are partly to blame for the dramatic drop in efficienty when moving from blue to green LEDsBY MATTHIAS AUF DER MAUR FROM THE UNIVERSITY OF ROME ‘TOR VERGATA’ AND SERGEY YU KARPOV FROM STR GROUP
Wednesday 22nd February 2017
A record-breaking bandwidth makes the violet semi-polar laser well suited for visible light communication 
Wednesday 22nd February 2017
Very high data rates and tremendous temperature stability make the InP quantum dot laser a very promising contender for tomorrow's optical networks
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Wednesday 22nd February 2017
Giving GaN freedom from Nb.N
Wednesday 22nd February 2017
Template-assisted selective epitaxy enables the construction of ultra-low power III-V TFETs on silicon substrates
Monday 20th February 2017
Power densities produced by GaN HEMTs can reach their full potential by integrating these devices with diamond and microfluidic cooling
Monday 20th February 2017
III-V devices deliver record on-currents, unprecedented gain at terahertz frequencies and far lower power-switching losses
Friday 27th January 2017
Company adds enterprise and cloud datacentre expertise to portfolio
Thursday 26th January 2017
Centre in  Blacksburg, Virginia adds to applications research and support for EPC customer evaluation

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