< Page >

Features


Tuesday 24th January 2017
Luxeon MX LED delivers 1,200 lumens at 150lm/W for outdoor lighting fixtures
Monday 23rd January 2017
CEO Martin Goetzeler is to leave Aixtron in agreement with the company's Supervisory Board
Thursday 12th January 2017
650V Schottky barrier diodes have 70 percent better surge forward current
Wednesday 11th January 2017
Carbonics launches carbon-on-silicon technology for RF applications
Thursday 22nd December 2016
Ultra-high resolution flexible displays will benefit from microLEDs that efficiently emit all three primary colours
Thursday 22nd December 2016
Eradicating epi-layer growth pits in GaN-on-GaN diodes boosts yield by reducing failures associated with low breakdown voltages
Info
Monday 19th December 2016
Multi-year agreement declares Veeco sole provider to Osram of MOCVD and PSP  technology
Friday 16th December 2016
US report urges Department of Energy to think of ways to continue to improve LED efficiency
Monday 12th December 2016
Private equity company Apollo Global Management to buy LED company for around $1.5 billion cash
Monday 12th December 2016
Automotive and datacentre applications helping to drive CAGR of 21.3 percent
Monday 28th November 2016
Switching the substrate from silicon to SOI increases the RF performance of the GaN HEMT, thanks to a foundation with lower loss and better isolation
Info
Monday 21st November 2016
Ammonia-free atomic layer deposition can yield tremendously smooth layers of GaN with incredibly high levels of uniformity.
Monday 21st November 2016
Mesa isolation deep into the native substrate propels the breakdown voltage of the GaN HEMT to 5kV, while increasing its effective critical lateral field to 1 MV/cm
Tuesday 8th November 2016
BY BING WANG, LI ZHANG, KENNETH ENG KIAN LEE, FAYYAZ MOIZ SINGAPOREWALA, EUGENE A. FITZGERALD AND JURGEN MICHEL FROM SINGAPORE-MIT ALLIANCE FOR RESEARCH AND TECHNOLOGY
Monday 24th October 2016
An inverted metamorphic architecture offers a route to making lightweight, incredibly efficient, cost-competitive cells for space.
Tuesday 11th October 2016
Regardless of its form, the silicon transistor is tipped to offer diminishing returns at the 7 nm CMOS node and beyond. Can the InGaAs finFET step in and maintain the march of Moore’s Law?
Tuesday 11th October 2016
Digital GaN-based power amplifiers can deliver a revolution in wireless communication infrastructure
Info
Tuesday 11th October 2016
BY CARLO DE SANTI, MATTEO MENEGHINI, GAUDENZIO MENEGHESSO AND ENRICO ZANONI FROM THE UNIVERSITY OF PADOVA
Friday 30th September 2016
The freestanding GaN HEMT holds the key to an affordable, highly sensitive nitrogen dioxide sensor operating at ultra-low powers
Tuesday 27th September 2016
The output power of the GaN VCSEL hits a new high with the introduction of epitaxial lateral overgrowth
Wednesday 14th September 2016
US Department of Energy solar initiative to fund CdTe research
Monday 12th September 2016
Products made from GaAs and LDMOS will be superseded by GaN variants that will penetrate new markets such as heating systems for microwave ovens, power sources for plasma lighting and automotive ignition
Monday 12th September 2016
Phosphors contribute to droop, but their energy-sapping impact can be minimised through LED design, or by casting them in a ceramic form.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
Live Event