High-power quantum cascade lasers (QCLs) operating at wavelengths not easily accessible by other laser sources could address substantial markets such as gas sensing. However, growing QCLs today amounts to little more than a cottage industry. Richard Stevenson investigates.
Cree is the star turn of the III-V manufacturers, and with no sign of the cell phone handset market waning, RFIC manufacturers are also raking in profits after last year's widespread losses. Meanwhile, JDS Uniphase raises hopes of a return to form with strong bookings. Michael Hatcher reports.
With LED manufacturers narrowing device quality requirements, improvements to structural and optical properties of epiwafer surfaces have become critical. Doru Florescu from Veeco Instruments describes GaN-based LED layer optimization using atomic force microscopy.
With the cellular infrastructure industry promising to offer III-V device manufacturers the first substantial application market for GaN-based electronics, Ed Piner reports on the latest efforts to push commercialization of AlGaN/GaN HFET technology at Nitronex Corporation.
High-speed wireless broadband data communications is expected to create a diversified, multibillion-dollar market for millimeter-wave devices in the next five years. According to Ed Weatherwax, the key areas are cellular infrastructure, two-way satellite terminals and terrestrial broadband access.
Regulated charge pump solutions are very popular for applications in handheld devices where the total output current is less than 100 mA, due to their simplicity and low cost, writes Fabien Franc of Catalyst Semiconductor.
Increased demand for optical data storage applications and from Korean cell phone manufacturers wanting blue LEDs are the primary reasons behind a boom in III-V device manufacturing in Taiwan, as Michael Hatcher reports.
With many optoelectronics manufacturers set up during the telecom boom now looking to target industrial and military applications of lasers, John Marsh describes a technique that improves the manufacturing yield of high-power diode laser arrays.
In just two years, DARPA's Semiconductor Ultraviolet Optical Sources (SUVOS) program has made 280 nm LEDs a reality, demonstrated prototype UV biosensor and communication systems, and yielded lasers operating below 350 nm. Tim Whitaker reports.
Agilent is now shipping 2 million E-PHEMT-based power amplifier modules per month, and cell phone consumers are benefiting from the increased battery life enabled by the technology. Dan McNamara describes the development of the devices and future plans for lower-voltage operation and front-end module integration.