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Features


Wednesday 15th September 2004
Tim Whitaker rounds up the latest developments in antimonide-based laser diodes, which can operate at room temperature and continuous-wave mode at wavelengths of up to 2.8 µm.
Wednesday 15th September 2004
High-power quantum cascade lasers (QCLs) operating at wavelengths not easily accessible by other laser sources could address substantial markets such as gas sensing. However, growing QCLs today amounts to little more than a cottage industry. Richard Stevenson investigates.
Wednesday 15th September 2004
Cree is the star turn of the III-V manufacturers, and with no sign of the cell phone handset market waning, RFIC manufacturers are also raking in profits after last year's widespread losses. Meanwhile, JDS Uniphase raises hopes of a return to form with strong bookings. Michael Hatcher reports.
Wednesday 15th September 2004
Tuesday 10th August 2004
Silicon LDMOS will continue to dominate the base-station power-amplifier market until an alternative technology can deliver higher performance at a lower price, writes Hamish Johnston.
Tuesday 10th August 2004
Price erosion and the emergence of new high-throughput standards are two of the big issues facing chip manufacturers in the wireless LAN market, says SiGe Semiconductor's Andrew Parolin.
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Tuesday 10th August 2004
The Fox Group has developed a hydride vapor-phase epitaxy technique that produces medium-brightness blue LEDs, based on AlGaN/GaN structures, at a low cost, writes Tim Whitaker.
Tuesday 10th August 2004
Researchers at IBM say they have developed a method that enables the fast, efficient manufacture of photodetectors that are compatible with CMOS production. Michael Hatcher reports.
Tuesday 10th August 2004
A kilowatt-scale terrestrial solar-cell array that employs III-V-based triple-junction technology could spur the improvement of both space-based and terrestrial solar-energy systems.
Tuesday 10th August 2004
GaN-based materials and quantum dots were two of the major talking points at ICMOVPE-XII, which was held in Maui, Hawaii. Richard Stevenson describes some conference highlights.
Friday 9th July 2004
GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.
Friday 9th July 2004
With LED manufacturers narrowing device quality requirements, improvements to structural and optical properties of epiwafer surfaces have become critical. Doru Florescu from Veeco Instruments describes GaN-based LED layer optimization using atomic force microscopy.
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Friday 9th July 2004
With the cellular infrastructure industry promising to offer III-V device manufacturers the first substantial application market for GaN-based electronics, Ed Piner reports on the latest efforts to push commercialization of AlGaN/GaN HFET technology at Nitronex Corporation.
Friday 9th July 2004
High-speed wireless broadband data communications is expected to create a diversified, multibillion-dollar market for millimeter-wave devices in the next five years. According to Ed Weatherwax, the key areas are cellular infrastructure, two-way satellite terminals and terrestrial broadband access.
Friday 9th July 2004
Rob Williamson and Manoj Kanskar report on dramatic improvements in the power conversion efficiency of high-power laser diode bars, enabling higher-reliability devices and new applications.
Tuesday 6th July 2004
Regulated charge pump solutions are very popular for applications in handheld devices where the total output current is less than 100 mA, due to their simplicity and low cost, writes Fabien Franc of Catalyst Semiconductor.
Tuesday 1st June 2004
Zero-bias InAs/AlGaSb detectors and a host of other III-V components are at the heart of a camera that is expected to dramatically improve mm-wave imaging systems. Tim Whitaker reports.
Tuesday 1st June 2004
With increasing electronic content and applications in cars, the automotive industry offers great potential for III-V device manufacturers. Richard Stevenson reports.
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Tuesday 1st June 2004
A fall in the price of blue LEDs used in handset keypad backlights means that Korean manufacturers are looking to white LEDs and applications outside the cell phone market. Hordon Kim reports.
Tuesday 1st June 2004
Increased demand for optical data storage applications and from Korean cell phone manufacturers wanting blue LEDs are the primary reasons behind a boom in III-V device manufacturing in Taiwan, as Michael Hatcher reports.
Tuesday 1st June 2004
As more companies develop commercially viable violet laser diodes, and both LEDs and lasers move into the UV, many improvements continue to be made at the device level, writes Max Shatalov.
Tuesday 1st June 2004
With many optoelectronics manufacturers set up during the telecom boom now looking to target industrial and military applications of lasers, John Marsh describes a technique that improves the manufacturing yield of high-power diode laser arrays.
Tuesday 4th May 2004
In just two years, DARPA's Semiconductor Ultraviolet Optical Sources (SUVOS) program has made 280 nm LEDs a reality, demonstrated prototype UV biosensor and communication systems, and yielded lasers operating below 350 nm. Tim Whitaker reports.
Tuesday 4th May 2004
Agilent is now shipping 2 million E-PHEMT-based power amplifier modules per month, and cell phone consumers are benefiting from the increased battery life enabled by the technology. Dan McNamara describes the development of the devices and future plans for lower-voltage operation and front-end module integration.

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