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Sunday 1st February 2015
Increased efficiencies, superior power-handling capabilities and higher breakdown voltages give GaN the upper hand over silicon LDMOS in L-band radarBY DOUG CARLSON AND ERIC HOKENSON FROM MACOM
Sunday 1st February 2015
The bipolar junction transistor, a building block of integrated circuits of the 1960s, is given a new of life in SiC circuits operating at 600°CBY CARL-MIKAEL ZETTERLING AND LUIGIA LANNI FROM KTH ROYAL INSTITUTE OF TECHNOLOGY, SWEDEN
Sunday 1st February 2015
Slashing the cost of CPV will not come from just edging up efficiency: It will also result from introducing ultra-high concentrations and moving to streamlined, high-volume production.BY RICHARD STEVENSON
Sunday 1st February 2015
Novel clamping of sapphire looks to unleash brighter, cheaper LEDs BY MARK DINEEN FROM OXFORD INSTRUMENTS
Sunday 1st February 2015
Mixed messages emerge from IEDM, with experimental efforts highlighting the promise of III-V transistors and calculations unveiling some weaknesses
Wednesday 17th December 2014
Equipping the grid with SiC-based solid-state transformers will lead to more efficient delivery of better-regulated power 
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Monday 15th December 2014
Single-crystal, high-quality AlN substrates underpin the production of bright, reliable ultraviolet LEDs delivering superior wavelength stability
Monday 15th December 2014
Analytical models accounting for reflections and photon recycling provide accurate predictions of device results. 
Thursday 11th December 2014
High-quality wafers processed on a 150 mm GaAs fabrication line promise lower GaN MMIC production costs 
Monday 8th December 2014
Breakthroughs in power electronics, advances in ultraviolet emitters and new arguments associated with the debate on droop featured at the latest international nitrides meeting 
Thursday 4th December 2014
Should developers of nanowire LEDs seek success with devices sporting diminished droop? Or should they try undercutting the cost of incumbent chips?
Monday 27th October 2014
Merging the quantum cascade laser and transistor promises new applications involving mid-infrared wavelengths through to terahertz frequencies
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Wednesday 22nd October 2014
GaN substrates formed from ammonothermal growth underpin the fabrication of devices delivering outstanding levels of performance
Monday 20th October 2014
A robust, reliable foundry process will spur a proliferation of GaN applications
Wednesday 15th October 2014
Production costs for GaN-based devices will plummet when epilayers are formed on 200 mm silicon
Monday 13th October 2014
By sucking heat from GaN HEMTs better than other substrates, diamond enables transistors to operate at higher ambient temperatures and have reduced finger spacing
Wednesday 8th October 2014
VCSELs that excel in speed and efficiency can aid data centres and play a role in night vision, ultra-high density magnetic storage, cosmetics and healthcare
Monday 6th October 2014
Inserting rare earth oxides increases material quality, trims wafer bow and boosts transistor performance
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Thursday 2nd October 2014
Breakthroughs in laser diode and fibre-coupling technologies are enabling low-cost, high-reliability sources with remarkable sheet metal cutting capabilities
Wednesday 1st October 2014
Record mobilities, production processes on 300 mm silicon and impressive nanometre-scale performance indicate that III-V MOSFETs are getting closer to enter production
Friday 26th September 2014
When it comes to efficient delivery of power to the antenna, UltraCMOS technology is now outperforming GaAs
Tuesday 23rd September 2014
With envelope tracking enhancing the efficiency of CMOS PAs to the levels of their GaAs cousins, is the incumbent technology under threat?
Monday 22nd September 2014
Sales of SiC MOSFETs are rising on the back of falling prices, expanding product portfolios and the entrance of new chipmakers into the market 
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