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Friday 24th February 2012
There is now little headroom left to improve the efficacy of the conventional white LED. But major gains in efficiency are possible by replacing the traditional combination of a blue chip and yellow phosphor with a monolithic,multiple wavelength source. One great way to do this is to work with nano-scale pyramids, say Samsung’s Taek Kim, Joosung Kim and Moonseung Yang.
Friday 24th February 2012
As a suppler of metal organic raw materials to companies providing MOCVD precursors, Albemarle had been quietly serving our industry for many years. Now the multi-national chemicals specialist is coming into full view by launching its PureGrowth line, a move designed to fulfil the hike in demand for materials for LED manufacturing. Richard Stevenson quizzes Albemarle’s Vice President, Performance Catalyst Solutions, Amy Motto, and the company Business Development Manager, Electronic Materials, Al Knight, about this venture.
Friday 24th February 2012
Expanding services in the pure-play market - WIN Semiconductors could easily rest on its laurels after grabbing the lion’s share of the GaAs foundry business. But that’s not the plan for this Taiwanese chip maker: Instead, it is expanding and refining its portfolio of GaAs technologies; it is preparing to introduce new GaN, packaging and copper bumping technologies; and it is getting ready to make its debut on the stock exchange. Richard Stevenson reports.
Friday 24th February 2012
InGaAs HEMTs form two-stage gain blocks delivering 9 dB of gain while consuming just 20 mW
Friday 24th February 2012
Inverted epitaxy boosts LED efficiency - Light generation in traditional LEDs is hampered by poor hole doping and an internal electric field that suck carriers out of the active region. The solution: Begin device growth with the p-type layers, because this bolsters carrier capture in the quantum wells and unlocks the door to polarization-induced hole doping, says Crosslight’s Z.Q. Li.
Friday 24th February 2012
The pairing of InGaAs and GaAsSb combine to create detectors with efficiencies exceeding incumbent designs
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Friday 24th February 2012
Growth on a-plane sapphire enables nitride cells to deliver record-breaking short-circuit current densities
Friday 24th February 2012
Semi-polar lasers don’t need electron-blocking layers to deliver high output powers in the green
Wednesday 8th February 2012
Welcome to this month's digital edition of Compound Semiconductor.
Tuesday 10th January 2012
This year's conference is building on the success of 2011 and has developed to a two day conference with the main theme of 'defining the next steps for the compound semiconductor industry' and includes a keynote speech from Robert Chau, Intel Senior Fellow and director of transistor research and nanotechnology in Intel¹s Technology and Manufacturing Group.
Wednesday 7th December 2011
Wrapping a dielectric around an indium gallium arsenide channel could hold the key to scaling ICs beyond the 14 nm node.
Monday 5th December 2011
Deposition of nitride epilayer stacks by MOCVD requires high temperatures and plenty of ammonia. But these downsides can be sidestepped with an alternative growth process called migration enhanced afterglow,which has been developed by Canadian start-up Meaglow. Richard Stevenson reports.
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Monday 5th December 2011
Flat, stress-free substrates with great surface quality will help to drive mass adoption of solid-state lighting. Such platforms reduce the impact of edge effects, allow the MOCVD deposition process to run more efficiently and ultimately cut the cost of LED chips, says Rubicon’s Raja Parvez.
Friday 2nd December 2011
Guaranteed access to leading edge GaN component technology is essential to maintain a competitive space industry in Europe. So companies and institutions are working together to build their own reliable, non-dependant,manufacturing supply chain for fabrication of space compatible GaN microwave transistors and integrated circuits, says Andrew Barnes and Fabio Vitobello from the European Space Agency and Joachim Daeubler, Klaus Hirche, Jouni Laetti and Mirko Rostewitz from Tesat-Spacecom.
Thursday 1st December 2011
Keithley Instruments recently launched an electrical characterization tool that caters for the needs of producers of wide bandgap power electronics and high-brightness LEDs. David Ridsdale quizzes the company’s marketing director, Mark Cejer, about the capability of this new product.
Tuesday 29th November 2011
Calculations unveil two problems with the Auger theory for LED droop: This recombination mechanism is far too weak, and it has a temperature dependence that fails to tally with experimental results
Thursday 24th November 2011
Simulations hold the key to unlocking the potential of wideband gap semiconductor transistors with novel architectures, say Hugh Wong, Nelson Braga, Shiyang Tian and Ricardo Borges from Synopsys.
Thursday 3rd November 2011
Purchasers of power electronics want transistors and diodes that deliver SiC performance at silicon prices. Next year they should get their wish when MicroGaN launches a range of 600 V, GaN-on-silicon devices. Richard Stevenson investigates.
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Wednesday 12th October 2011
Talk of a concentrating photovoltaic (CPV) market that is about to take off will court derision from some quarters, with sceptics arguing that they’ve heard it all before. But this industry has undoubtedly matured in recent times, and there is very good reason to believe that CPV deployments will rise and rise, offering a great opportunity for makers of triple-junction cells that can fulfil the wishes of their customers. Richard Stevenson investigates.
Wednesday 12th October 2011
Indium clustering in InGaN quantum wells stems from electron beam exposure, according to atom probe measurements
Wednesday 12th October 2011
Quantum dots enable long-wavelength telecom lasers to combine sufficient output with incredibly low noise figures
Tuesday 11th October 2011
To take nitride transistor speeds to a completely new level, researchers must work with novel designs employing either a new pairing of materials or the unconventional nitrogen-face, argue Dong Seup Lee and Tomas Palacios from Massachusetts Institute of Technology.
Tuesday 4th October 2011
Following several years of development with UMS and Fraunhofer Freiburg Institute, NXP is starting to launch a family of high-performance GaN-on-SiC power transistors that will complement its hugely successful silicon LDMOS products, says the company’s Director of Marketing for RF Power, Mark Murphy.
Tuesday 4th October 2011
The red laser is a great friend of the film buff. It has been the key ingredient for extracting the data from billions and billions of DVDs, and thanks to increases in output power, it promises to now enable the manufacture of brighter, more colourful displays, including three-dimensional ones employed in cinemas, says Modulight’s Marketing Manager Anca Guina.

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