The standard growth process for silicon carbide produces high-blocking-voltage devices, but suffers from long processing times. These delays are hindering commercialization, says Francesco La Via, who believes that the problem can be overcome by adding hydrogen chloride into the cell.
High-performance traveling-wave amplifiers for oscilloscopes, radar and phased-array equipment can be made cheaper and simpler by switching to custom-built designs, claim Mark Kelly and Thorsten Brabetz.
MaxMile Technologies has launched the first non-destructive electroluminescence mapper for unprocessed LED epiwafers. The tool is claimed to offer quick feedback that can speed LED development and improve quality control. Richard Stevenson investigates.
The plastic optical fiber networks that feature in many of today's cars have data transmission rates that are limited by LED switching speeds. This barrier can be overcome, though, says Firecomms' John Lambkin, if these light sources are replaced with resonant-cavity LEDs.
Today's III-V MEMS community is producing a wide variety of devices for applications as diverse as gas sensing, monitoring sugar levels in water, detecting explosives and reducing pollution from diesel engines. Richard Stevenson reports.
Princeton Lightwave has commercialized a single-photon avalanche photodiode that is targeting quantum cryptography applications. Mark Itzler describes some of the benefits offered by the device's design, and explains how it could provide uncrackable communications.
The vacuum tubes used in today's millimeter-wave transmitters face an increasing threat from GaN HEMTs. Cree's Yifeng Wu and Primit Parikh are leading the GaN charge with designs that incorporate field plates, iron-doped buffer layers and a thin AlN interlayer to deliver a record power at 30 GHz.
III-V device highlights at the 2005 International Electron Devices Meeting held in Washington, DC, included high-power GaN HEMTs with both single and dual field plates, and metal-insulator-semiconductor structures producing very low leakage currents. Richard Stevenson rounds up.
Alight Technologies is tackling the need for powerful long-wavelength, single-mode VCSELs by marrying its photonic-bandgap technology with Infineon's dilute-nitride platform. Dan Birkedal and Dirk Jessen detail the hybrid design and reveal why it will benefit datacom and telecom networks.
A new reflectance sensor from LayTec aids LED development and manufacturing by providing in situ strain measurements of the epilayers. Richard Stevenson learns how German start-up Azzurro Semiconductors is using the sensor for GaN-on-silicon growth.
Working at the esteemed department of materials science and metallurgy at the University of Cambridge, UK, Colin Humphreys is arguably the GaN community's most candid researcher. Jon Cartwright visited his laboratory – the Cambridge Centre for Gallium Nitride.
European researchers are developing high-frequency transistors based on a variety of radical technologies to power security-camera systems, probe distant galaxies and boost computer performance. Richard Stevenson investigates.
Already the darling of venture capitalists, the solar energy market has now attracted the attentions of the semiconductor community's biggest equipment supplier. Michael Hatcher finds out exactly where the opportunity for compound semiconductors lies in a sector that is virtually monopolized by silicon.
The cost of deploying fiber to the premise limits the data rates available to most US businesses. The solution, say Doug Lockie and Don Peck of GigaBeam, is to connect fiber networks to enterprises by millimeter-wave radio transmissions, delivering gigabit-per-second data rates.