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Monday 2nd August 2010
UCSB computational scientists who investigated the light absorption by carriers in nitride lasers found that the low ionization density of the magnesium dopant atoms was a major contributor to absorption losses.
Monday 26th July 2010
Scientists at Johannes Gutenberg University Mainz (JGU) have found that gallium-rich CIGS cells are less homogeneous than indium-rich cells and hence have lower efficiencies.
Tuesday 20th July 2010
Applying a holistic approach to concentrator photovoltaic system design, teaming up with academics to develop flexible, highly efficient, low-cost multi-junction cells and targeting different markets should spur the growth of Circadian Solar. Richard Stevenson reports.
Tuesday 20th July 2010
Engineers at Osram Opto-Semiconductors have broken the CW output power record for a true green laser with a polar device delivering 50 mW. Their 524 nm green emitter meets the specs for laser pico projectors, which need a 50 mW source emitting between 515 nm and 535 nm to deliver 10 lm of light on a screen.
Thursday 15th July 2010
Increasing GaAs fab throughout, streamlining carrier mobility measurements on pHEMT production wafers and suggesting new ways to improve the performance of this class of transistor featured in this year’s CS-Mantech. Richard Stevenson reports.
Wednesday 14th July 2010
Unleashing the high electron and hole mobilities of InGaAs and germanium in an evolutionary CMOS architecture is possible by introducing a common gate stack. This can be formed by a combination of a sulfur-based treatment and deposition of aluminum oxide, and results suggest that this process does not hamper the performance of these novel devices, says IMEC’s Thomas Hoffmann.
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Wednesday 14th July 2010
Theorists are proposing that density activated defect recombination (DADR) can account for droop, the decline in a nitride LED’s external quantum efficiency at high drive currents.
Thursday 8th July 2010
Scaling silicon ICs involves packing transistors closer and closer together, and this is pushing the power density on the chip towards its limit. Switching to III-V CMOS offers a promising way forward, but can this alternative technology be scaled to a few nanometers, manufactured in really high-volume and made in such a way that it has the look and feel of the silicon incumbent? Jesús del Alamo from MIT discusses the issues.
Tuesday 6th July 2010
Manufacturers of compound semiconductors look for every opportunity to improve process or yield. HÜTTINGER discusses the energy supply needs for manufacturers and decide that efficiency and robustness are the main requirements for power supplies in semiconductor production.
Friday 2nd July 2010
The collaboration has achieved record efficiencies with established GaAs RF Devices by using accurate harmonic tuning.
Thursday 1st July 2010
InSbN photovoltaic infrared detectors offer a promising alternative to the HgCdTe incumbent by combining superior material quality with lower Auger recombination and a range of fabrication techniques.
Tuesday 29th June 2010
The output power of deep ultraviolet LEDs needs to rise if these devices are to be employed for water and air purification and polymer curing. One way to realize this is to turn to lamps that offer a far larger emission area, according to Asif Khan, Qhalid Fareed and Vinod Adivarahan from the University of South Carolina and Nitek.
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Thursday 24th June 2010
Silicon offers a large, low-cost platform for making nitride LEDs, but realizing high quality epitaxy is tough due to the stress between the two materials. However, it is possible to produce the crack-free, low-defect-density films demanded by high-power LEDs by turning to a patterned substrate and a multi-layer buffer, says Lattice Power Corporation.
Thursday 24th June 2010
A team of researchers at the Chinese Academy of Sciences has built the first square microlasers featuring output ports on opposite corners.
Monday 21st June 2010
The shrinkage of the fundamental bandgap near the surface of InAs and other compound semiconductors could offer a new route in bandgap engineering.
Monday 21st June 2010
Anadigics has packed an awful lot into its first 25 years: it has experienced the highs of pioneering 4-inch GaAs production and leading high-volume manufacturing of power amplifiers for handsets; but it has also suffered from the lows of dealing with unsustainable losses and losing market share to superior chip technology. Richard Stevenson tells the company’s story.
Monday 21st June 2010
Scientists at West Virginia University have obtained experimental evidence of phase separation in AlInGaN layers with a few percent aluminum and indium.
Monday 21st June 2010
Researchers at the University of California, Santa Barbara (UCSB) and Mitsubishi Chemical claim to have uncovered a superior semi-polar plane for making green lasers.
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Thursday 17th June 2010
Strong sales of LED backlit screens and mobile devices have led to substantial gains in the share prices of many III-V chipmakers over the last year. Richard Stevenson reports.
Wednesday 16th June 2010
A team of French researchers claims that it has fabricated the first GaAs/AlGaAs quantum cascade detector (QCD) capable of operating at very long infrared wavelengths.
Tuesday 15th June 2010
GaAs and GaN technologies can spur high-quality delivery of advanced video, data and telephony services to the home, says TriQuint’s Chris Day.
Monday 14th June 2010
Scientists at the Eindhoven University of Technology based in the Netherlands have developed a new process which combines all the process steps needed in creating a Photonic Integrated Circuit (PIC)
Friday 4th June 2010
The device has a “space cavity” and is claimed to offer the Highest-Performance Ultra-Low-Noise Transistor for use in image sensors deployed in anti- terrorism applications.
Thursday 27th May 2010
Combining a metallic foundation with a vertical current path creates an LED that prevents current crowding, realizes excellent thermal management, and delivers the high efficacies and long lifetimes needed for general illumination, says SemiLEDs’ Trung Doan.

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