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Monday 30th June 2008
Looking out of the window on the train from Madrid to Seville, you might catch sight of a phalanx of solar panels in a key test plant for compound semiconductor-based energy production. With sites like this becoming increasingly common, the concentrating photovoltaic industry gathered in Madrid to report their systems' latest results at the CPV Today summit, and Andy Extance joined them.
Monday 23rd June 2008
Today's quantum-dot lasers operate in niche markets. However, significant laser shipments could soon materialize thanks to Fabry-Pérot designs that offer the ideal source for optical links in next-generation computer systems, according to Alexey Kovsh and Greg Wojcik from Innolume.
Monday 16th June 2008
Adding sodium to a gallium melt that is fed with nitrogen gas promises to scale up miniscule GaN crystals to 4 inch diameters, according to Osaka University's Fumio Kawamura, Yasuo Kitaoka, Yusuke Mori and Takatomo Sasaki.
Monday 9th June 2008
Scaling down silicon CMOS nodes is getting harder and harder. However, help is on the horizon in the form of III-V and germanium MOSFETs that can improve the performance of n- and p-type channels, say Matthias Passlack, IMEC's Marc Heyns and Iain Thayne from the University of Glasgow.
Monday 2nd June 2008
The rush to invest in and develop clean energy technologies has witnessed unprecedented interest in III-V solar cells for concentrating photovoltaics. However, as Michael Hatcher reports from a sunny Key West, huge challenges lie in wait.
Tuesday 27th May 2008
The wide-bandgap electronics market is still looking like a lucrative one, but only if you adopt a
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Tuesday 1st April 2008
Now much less reliant on mobile phone backlighting, the market for high-brightness LEDs is bouncing back from two years of sluggish growth, writes Michael Hatcher.
Tuesday 1st April 2008
Manufacturers of switch-mode power supplies can get exactly what they want with Velox's GaN-on-sapphire Schottky diodes: the performance of SiC at a fraction of the price. Michael Murphy, Linlin Liu, Milan Pophristic and Boris Peres detail the advantages of the technology.
Tuesday 1st April 2008
Rohm believes that it is impossible to make conventional nitride laser diodes that emit in the green, so it has turned its attention to non-polar equivalents. Is this strategy starting to pay dividends? Richard Stevenson investigates.
Tuesday 1st April 2008
Attempts at growing III-Vs on conventional silicon tend to end in failure. But germanium-based composites and off-axis silicon can provide a platform for high-performance chips for digital logic and broadband RF applications, say Dmitri Lubyshev, Joel Fastenau and Amy Liu.
Tuesday 1st April 2008
Several decades of research have failed to boost the currents in inversion-mode III-V MOSFETs. However, massive improvements are possible by combining indium-rich InGaAs channels with high-k dielectrics grown by atomic-layer-deposition, explains Peide Ye from Purdue University.
Tuesday 1st April 2008
Vertical conduction ramps up the drive currents and output powers of ultraviolet LEDs. Such devices will soon enter the market through Nitek Inc, where they will take on bulky high-voltage UV lamps for use in purification and curing applications, says Asif Khan from the University of South Carolina.
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Monday 17th March 2008
Vic Steel is looking to keep RFMD ahead of the rest of the GaAs field with MEMS for RF switch integration in handsets and an unexpected foray into photovoltaics. The company's vice-president of corporate R&D shares his game plan with Andy Extance.
Monday 17th March 2008
Rubicon, Infinera and IPG Photonics are all new to the stock market in the past year. So how did they all perform?
Monday 17th March 2008
Better extraction efficiencies for red LEDs are now possible, thanks to specially designed transmitting and reflecting layers that feature in two of Epistar's latest product lines, say the company's Tzer-Perng Chen and Min-Hsun Hsieh.
Monday 17th March 2008
Epiwafer cracking hampers UV-laser diode production, but this problem can be avoided by inserting triangular-shaped GaN pyramids on top of the sapphire substrate, says Harumasa Yoshida from Hamamatsu Photonics.
Monday 17th March 2008
The terahertz gap is on the way out. Transistors are speeding up, quantum cascade lasers are stretching farther into the microwave domain and the window that's left is shrinking, reports Richard Stevenson.
Monday 17th March 2008
Devising a monolithic approach to making a silicon light source has been fraught with difficulty, but the fabrication of lattice-matched GaNAsP lasers on CMOS-compatible substrates is showing a great deal of promise, according to Wolfgang Stolz from the University of Marburg and NAsP III/V.
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Monday 17th March 2008
Electrically pumped GaN VCSELs are just round the corner, thanks to the development of AlInN-based distributed Bragg mirrors and ring-shaped intracavity contacts, says EPFL's Eric Feltin.
Monday 11th February 2008
Traditionally the conference where future silicon processes first emerge, it was standing room only for "III-V CMOS" at the 2007 International Electron Devices Meeting held in Washington, DC.
Monday 11th February 2008
Hermetic wafer-level packaging can cut the cost and weight of III-V MMIC protection and offer a route to combining different types of chip in a single compact module, say Patty Chang-Chien, Xianglin Zeng, Yun Chung and Jeff Yang from Northrop Grumman Space Technology.
Monday 11th February 2008
If you want p-type GaN with sharp p-doping profiles and low resistivity, then consider switching your carrier gas from hydrogen to argon, say Vladimir Dmitriev and Alexander Usikov from Technologies and Devices International.
Monday 11th February 2008
Photon recycling and quantum wells enhance single-junction solar cell efficiencies and will boost tandem cell performance to triple-junction levels, say Quantasol's Kevin Arthur and Keith Barnham.
Monday 11th February 2008
Ultra-high efficacy white-light sources can be built by carefully mixing efficient blue, green, yellow and red LEDs, say Sandia National Laboratories researchers. Richard Stevenson investigates.

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