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Features


Friday 11th May 2012
If a small start-up is to succeed in the GaAs industry, it must identify niche markets and focus on them. BeRex has done just that, and it is now winning substantial sales in the mobile infrastructure and microwave sectors. Richard Stevenson reports.
Thursday 10th May 2012
Speaking at CS Europe 2012, leading market analysts predicted healthy sales growth for GaAs microelectronics, plus rocketing revenues for LEDs and wide bandgap devices. Richard Stevenson reports.
Friday 20th April 2012
Traditional measurement techniques fail to reveal the harmonic signals in power amplifiers that drag down efficiency. But they can be exposed by Mesuro’s novel measurement technology, which can underpin improvements in all forms of nonlinear device. Richard Stevenson reports.
Friday 20th April 2012
Operating a HEMT at a low bias for hours and hours can lead to failure, due to a steady accumulation of defects that eventually create a breakdown path
Friday 20th April 2012
Combining a GaN pump source with a novel II-VI structure yields a powerful, efficient green laser
Friday 20th April 2012
A silicon dioxide bonding process promises to unlock the door to circuits exploiting the strengths of silicon and GaN
Info
Thursday 19th April 2012
Fierce competition in the backlighting market is squeezing the profits of leading LED chipmakers,which are now trying to boost their margins by targeting general lighting. At Epistar, this had led to the development of highly efficient warm-white sources that combine red and blue chips, explains Epistar’s Shao-You Deng, Special Assistant to the company’s General Manager, in a interview with Richard Stevenson.
Tuesday 3rd April 2012
Replace silicon diodes and transistors with those made from SiC and the operating temperature of power electronics can soar to such an extent that bulky thermal management systems are no longer needed. The upshot: Squeezing grid-scale renewable energy inverters, downhole electronics and aerospace engines and actuators into far smaller spaces, says Ranbir Singh of GeneSiC.
Monday 2nd April 2012
Wireless-over-fibre systems are needed to increase data rates to the speed demanded by next-generation wireless networks. One key component in these systems is the near-ballistic uni-traveling carrier photodiode, which can operate at ultra-high speeds with the addition of a p-type charge layer inside the collector, says Jin-Wei Shi from National Central University, Taiwan.
Wednesday 28th March 2012
Breaking the 200 lm/W barrier for the red LED will do far more than simply increase the efficiency of car brake lights. It will also improve the efficacy and colour quality of solid-state lighting sources as well as pico-projectors and yield a lighting product for greenhouses when combined with blue LEDs, says Martin Behringer from Osram Opto Semiconductors.
Tuesday 27th March 2012
Transistors built from GaN-on-silicon promise to grab a major share of the power device market, thanks to their combination of low cost and high performance. Converting their potential into success hinges on scaling production to large wafer sizes and employing excellent passivation techniques, two areas where they excel, according to EpiGaN founders Marianne Germain, Joff Derluyn and Stefan Degroote.
Friday 16th March 2012
Positive vibes abounded at day two of CS Europe, with industry leaders offering insights into novel lasers, GaN-on-silicon transistors and SiC power electronics.
Info
Tuesday 13th March 2012
Insights from market analysts, details of the inroads of III-Vs into silicon CMOS and advances in LEDs, abatement and foundry services all featured on the opening day of CS Europe
Monday 12th March 2012
Miniature LED arrays produce incredibly bright, colourful displays that are suitable for many applications. Opportunities include exposing resists; confining and manipulating cells; and probing and controlling genetically targeted cells, says Jim Bonar from mLED.
Friday 9th March 2012
Biomedical diagnostics and next-generation optical data storage require ultra-fast bursts of blue and purple laser emission. Complex, cumbersome and bulky Ti:sapphire lasers are providing these pico-second pulses today, but it would be preferable to use a simpler, cheaper and far more portable GaN chip that we are now developing through a European future and Emerging technologies project, say Dmitri Boiko from CSEM.
Friday 9th March 2012
Surveillance is increasingly performed with unmanned aerial vehicles fitted with infrared imaging systems. These long-wavelength, high-performance detectors require substantial cooling and draw a lot of power from on-board batteries. But these demands could be reduced with Sofradir’s new generations of mercury cadmium telluride detectors that promise to operate at higher temperatures, thanks to improvements in passivation layers and device architectures. Richard Stevenson reports.
Friday 9th March 2012
GaN lasers perform at their best when grown on a flat native crystal that combines low dislocation densities with a high enough free carrier concentration to ensure a strong refractive index contrast between device and substrate. Making such a foundation in reasonable volumes with acceptable growth rates is tough, but we believe the most promising approach employs high nitrogen pressure and liquid gallium to form very high quality, free-standing crystals on an array of HVPE-grown seeds, says Michal Bockowski from the Institute of High Pressure Physics, Polish Academy of Sciences, in Warsaw.
Friday 9th March 2012
Forming double-heterostructure FETs with an AlGaN barrier improves electron confinement, leading to a higher drain bias.
Info
Friday 9th March 2012
A mix of modelling and experiment creates a strong case for carrier asymmetry as a primary cause of LED droop
Friday 9th March 2012
Purified hydrogen is an essential ingredient in the MOCVD processes used to manufacture LEDs, power devices and photovoltaics.Moves toward larger reactors and bigger wafers are increasing the demand for more and more ultra-pure hydrogen from increasingly reliable, compact sources. Fulfilling this need is a novel palladium technology developed by Power and Energy, says the company’s Stuart Bestrom
Friday 9th March 2012
Calculations unveil two problems with the Auger theory for LED droop. This recombination mechanism is far too weak, and it has a temperature dependence that fails to tally with experimental results
Thursday 8th March 2012
III-V MOSFETs entering the third dimension, quantum-well FETs with low power consumption and GaN diodes and transistors that combine high breakdown voltages with tiny leakage currents all featured at the recent IEDM meeting. Richard Stevenson reports.
Friday 24th February 2012
Poor light extraction holds back LED performance. But this can be avoided by inserting a patterned dielectric stack on top of the device, an approach that has the added bonus of controlling the far-field emission pattern, says Ahmed Noemaun from Rensselaer Polytechnic Institute.
Friday 24th February 2012
The goal of every HBLED manufacturer is more light for less money. With strong competition and numerous technology hurdles it is vital that all manufacturing steps are pushed. Mark Dineen, Product Manager (HBLED) at Oxford Instruments Plasma Technology discusses how optimised plasma etching offers several ways to improve device output and reduce costs providing a double windfall.

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