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Thursday 4th March 2010
Switching from a simple quantum barrier to multiplayer variant can boost internal
Wednesday 3rd March 2010
Riber is set to provide new GaN products in the future.
Wednesday 3rd March 2010
Leading market analysts offer their take on the health of the GaAs, SiC, GaN and InP substrate markets, and predict how these sectors will evolve over the next few years. Richard Stevenson reports.
Tuesday 2nd March 2010
Manufacturer of sapphire substrates and optical windows, Rubicon has published its results for 2009.
Tuesday 2nd March 2010
Comparative studies have unveiled an LED architecture for realizing negligible droop: Employ a non-polar design with an electron blocking layer to abolish carrier spillover and a gallium-doped ZnO p-contact to eliminate current crowding, say a team of researchers from Virginia Commonwealth University and Kyma Technologies.
Monday 1st March 2010
Today’s GaN substrates are manufactured by a HVPE process that requires high temperatures and substantial reactor maintenance. Ammonothermal growth can address both these issues, while producing material with far fewer dislocations in a more efficient manner, says Ammono’s Robert Dwilinski, Roman Doradzinski and Marcin Zajac.
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Friday 26th February 2010
First Solar has announced its quarterly results for the last three months of 2009.
Wednesday 24th February 2010
RFMD has announced it will carry out research and development contracts worth $5 million this year and that it has signed a new contract with the US government.
Tuesday 23rd February 2010
Self-heating, carrier spillover and Auger recombination could all contribute to the droop occurring in record-breaking, sub-250 nm LEDs.
Thursday 18th February 2010
A new report by Infonetics Research has revealed the potential for growth in 2010 of optical network hardware vendors as they strive to support such organisations' upgrades to next-generation technology.
Wednesday 10th February 2010
The University of California, Santa Barbara spin-off breaks it own record for the longest wavelength, CW nitride laser.
Wednesday 10th February 2010
Kevin Schoenrock, product marketing manager for TriQuint, explains how two GaAs processes within its TQBiHEMT reduces part count and saves board space.
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Friday 5th February 2010
Veeco has spoken out about industry claims that a bottleneck of MOCVD tools will impact upon market demand for HB LEDs. It stated that not just any company can take away market share from Veeco should they be unable to meet demand.
Wednesday 3rd February 2010
The GaAs technology used by TriQuint Semiconductor means it can meet the demands placed upon network operators of faster and more efficient broadband internet access via smartphones.
Wednesday 3rd February 2010
Cree's new XLamp MPL EasyWhite LED - which has a footprint 72 per cent smaller than its nearest competitor - is a result of effective research and development, LED product marketing manager at Cree Paul Scheidt has said.
Monday 1st February 2010
The DoE has given £2.4 million in funding to Applied Materials so it can advance a GaN MOCVD system to make the manufacture of LEDs cheaper and more efficient.
Monday 1st February 2010
Soaring sales of VCSELs for optical links in PCs and handsets, coupled to the launch of ultra-efficient multi-junction solar wafers and the introduction of next-generation wireless products could bolster IQE’s revenue in the coming years.
Monday 1st February 2010
Osram has been a front-runner in race to make a green-emitting nitride laser, and its attempts to reduce dark spots in the active layer have enabled the company to be the first to break the 500 nm barrier. Stephan Lutgen, Uwe Strauß and Michael Schmitt detail device development and the wide variety of applications that promise to benefit from it.
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Monday 1st February 2010
If terrestrial concentrator photovoltaics are to enjoy significant commercial success then electricity generation costs must fall. One way to do this is to improve the design of the cell with a stacked architecture that eliminates strain and current matching issues, according to IMEC’s Giovanni Flamand.
Monday 1st February 2010
LEDs are making inroads into the backlighting of LCD TVs and general illumination. Further success hinges on reducing the cost per lumen, and this can be realized through a move to growth on larger sapphire or silicon substrates, argues Aixtron’s Rainer Beccard.
Monday 1st February 2010
The benefits of fab ownership will increasingly outweigh the disadvantages as component manufacturers meet the challenges of lower cost and higher transmission speeds by design and test complexity back to the chip level argues Oclaro's Andy Carter.
Monday 1st February 2010
Highlights from IEDM 2009 include the development of novel, normally-off GaN transistors for power electronics and improved gate dielectrics for III-V transistors targeting logic applications. Richard Stevenson reports.
Monday 1st February 2010
Modulation experiments with nitride lasers reveal that Auger is the cause of LED droop
Sunday 1st November 2009
Differences in polarity, lattice constant and thermal expansion hamper the unification of compound semiconductor light emitting structures and silicon ICs. But Zetian’s Mi’s team from McGill University can avoid all these issues by turning to a novel micro-tube laser architecture that suspends the device just above the wafer surface. Richard Stevenson reports.

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