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Tuesday 23rd August 2016
GaN-based LEDs are more efficient and cost-effective when they contain an array of embedded hollow cavities in the sapphire substrate
Tuesday 23rd August 2016
Production of affordable, high-quality GaN substrates could result from HVPE of GaN on a native surface
Tuesday 23rd August 2016
Increasing the indium content in the InGaAs channel boosts the drive current of a tunnel FET while maintaining its great switching behaviour
Monday 15th August 2016
Growing gallium oxide on sapphire can fulfil the promise of cheap, efficient, high-voltage power devices
Monday 15th August 2016
GaN HEMTs are ideal for making high-power amplifiers for satellite communication, because they are lightweight, compact, efficient and capable of delivering a high output power and uniform gain over a broad bandwidth
Tuesday 9th August 2016
Earlier this year Veeco launched the K475i, a flagship tool for arsenide and phosphide growth. Company Vice President of Marketing for MOCVD, Sudhakar Raman, explains the rationale behind the release of this system, and why it can trim device manufacturing costs by up to 20 percent.
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Tuesday 9th August 2016
To increase yield and throughput in high-volume GaAs fabs, engineers should obtain more data from suppliers, introduce better approaches to analysing process data, and understand how different statistical methods handle outliers.
Monday 4th July 2016
Single-wafer MOCVD tools producing rapid changes in temperature are ideal for delivering high throughput while ensuring excellent levels of film uniformity
Monday 4th July 2016
Optimised growth enables the first optically pumped, low-threshold deep UV lasers on sapphire
Monday 4th July 2016
By forming an intermediate band, dilute nitrides promise to propel single-junction solar cell efficiency to new highs
Tuesday 28th June 2016
To produce the best PIC, is it better to take an InP laser and unite it with a silicon photonic chip, or make many components in InP, before uniting with silicon?
Tuesday 28th June 2016
Transfer printing of silicon onto InGaAs creates a multi-band detector for visible and infrared imaging
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Friday 24th June 2016
Mapping a carrier’s emissivity and temperature profile exposes microcracks and emissivity variations that can directly impact thin-film deposition and device performance
Friday 24th June 2016
While the majority of CS shares head south, Oclaro’s are bucking the trend and soaring
Thursday 16th June 2016
Yellow and orange sources result from the controlled annealing of phosphide material systems with a dielectric cap
Tuesday 14th June 2016
Does InGaAs have the right set of attributes for maintaining the march of Moore’s Law?
Monday 13th June 2016
A lack of standards for 5G is threatening a move to faster data rates for mobiles, and could also hinder the growth of the internet-of-things and machine-to-machine communication
Monday 13th June 2016
High power, high efficiency UV emitters could result from the efficient tunneling injection of holes
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Friday 3rd June 2016
Analysts at CS International claimed that 5G will be good for GaAs, opportunities in the infrared can diversify LED sales, and space applications are dominating shipments of multi-junction cells
Wednesday 1st June 2016
Can quantum dot lasers open up new possibilities for silicon photonics? Rebecca Pool looks at the work of Huiyun Liu and his team at University College London to track some of the discoveries being made in the lab.
Wednesday 1st June 2016
Photonic integration brings significant advantages in performance, environmental endurance and reliability. Rolf Evenblij, Program Manager at Technobis Fibre Technologies, looks at the key components enabling the detection of extremely small variations in temperature, vibration (and other parameters) for monitoring applications in aerospace, energy and nuclear industries, semiconductor and medical sectors.
Friday 20th May 2016
As device geometries continue to shrink, semiconductor packaging technologies face constant challenges to remain relevant and economically viable. Need of the hour is to develop innovative approaches that cost-effectively address the emerging requirements.
Friday 20th May 2016
MOCVD reactors that deliver fast production of aluminium-rich epiwafers with carefully controlled doping profiles can drive a growth in shipments of UV LEDs and vertical power devices
Thursday 12th May 2016
Are the higher efficiencies and speeds required by 5G destined to play into the hands of compound semiconductor chipmakers? 

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