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Tuesday 21st January 2014
Rubicon Technology to ease LED manufacture by ramping patterned sapphire substrate production and more. Compound Semiconductor reports.
Friday 10th January 2014
IHS predicts silicon-based LEDs will nearly rival sapphire-based devices on market share come 2020. Compound Semiconductor finds out more.
Thursday 9th January 2014
Optical designers are keen to combine the high-intensity, directional output of a laser with the low cost and broad spectral output of an LED. These wishes can now be fulfilled, due to the development of a novel LED featuring a parabolic mirror, claims Bill Henry from InfiniLED.
Thursday 2nd January 2014
The debate on droop has been enriched by compelling evidence that Auger is to blame. Strong support for this includes our novel experimental data that shows that carriers produced in a green quantum well interact via Auger processes to generate higher energy carriers, which populate and recombine in an ultraviolet well, explain Michael Binder, Bastian Galler, Roland Zeisel and Anna Nirschl from Osram Opto Semiconductors.
Friday 20th December 2013
At the heart of the debate over the origin of droop is the question: Auger or not Auger? Circumstantial evidence for Auger has been mounting, and now this is joined by a ‘smoking gun’, the observation of hot Auger electrons in electro-emission. Detailing their novel experiment and its interpretation are a UCSB-Ecole Polytechnique partnership involving Claude Weisbuch, James Speck, Justin Iveland, Marco Piccardo, Lucio Martinelli and Jacques Peretti.
Thursday 19th December 2013
Photoluminescence exposes improvements within the quantum well
Wednesday 18th December 2013
It is expensive to manufacture a GaN laser, and its peak efficiency is not that impressive. So why is this device, rather than the LED, being touted as the future of solid-state lighting? RICHARD STEVENSON investigates.
Tuesday 17th December 2013
To prevent the formation of efficiency sapping defects, conventional multi-junction cells are built with lattice-matched materials. But this restriction can be lifted with wafer-bonding, which enables the fabrication of a four-junction cell with record-breaking efficiency, say Rainer Krause and Bruno Ghyselen from Soitec and Frank Dimroth from the Fraunhofer Institute for Solar Energy Systems.
Friday 13th December 2013
GaN crystal newcomer, Fairfield Crystal Technology, is ready to take substrates to greater lengths, reports Compound Semiconductor.
Wednesday 11th December 2013
If reductions in the dimensions of the transistor are going to go hand-in-hand with increases in its performance and a trimming of its power consumption, silicon channels will have to be replaced with higher mobility materials, such as III-Vs. But will this happen, and if so, when? What has to be done to usher in these new materials? And if III-Vs are to make an impact in microprocessors, will they be there to stay? Richard Stevenson puts these questions, plus several more, to analyst Dean Freeman from Gartner Research.
Friday 29th November 2013
ABI Research analyst, Lance Wilson, predicts GaN will drive pulsed RF power device market growth. Compound Semiconductor finds out more.
Tuesday 26th November 2013
To propel widespread uptake of solid-state lighting, LEDs must be cheaper and more efficient. One way to do that is to switch the material used to make these devices from nitrides to cuprous halides, which have incredibly high exciton binding energies and can be grown on silicon substrates, argue Doyeol Ahn from the University of Seoul, Korea, and Seoung-Hwan Park from Catholic University of Daegu, Korea.
Friday 22nd November 2013
Development may be in full swing, but the market is still waiting for much cheaper bulk GaN, reports Compound Semiconductor.
Monday 18th November 2013
Spec sheets can indicate identical compositions of a layer in a particular structure produced by different suppliers. But in practice there will be variations associated with in-house measurements, calibration samples, and data interpretation. Far greater consistency is possible, however, with an expanding portfolio of true reference samples that are already available, argues Kris Bertness from NIST.
Friday 15th November 2013
It is very tricky to come up with a watertight explanation for the cause of droop. However, it is certainly possible to combat this mysterious malady, which causes LED efficiency to decrease at high current densities, by: turning to better electron-blocking layers made from InAlN; and improving the injection of holes into the wells, plus their distribution throughout the active region, argues to Jae-Hyun Ryou from the University of Houston, Russell Dupuis and P. Douglas Yoder from Georgia Institute of Technology and Fernando Ponce from Arizona State University.
Tuesday 12th November 2013
A gold-free metal stack enables HEMT processing that is compatible with silicon fabs
Friday 8th November 2013
Germany-based researchers and industry players join forces to commercialise GaN-on-GaN research. Compound Semiconductor finds out more.
Wednesday 6th November 2013
It is far more challenging to make a bright, cheap ultra-violet LED than one emitting in the blue. But success is promised with a transparent contact layer, reflective electrodes, photonic structures and growth on silicon, says Hideki Hirayama from RIKEN.
Thursday 31st October 2013
As the French government ploughs millions of Euros into concentrated photovoltaic power projects, relative newcomer, Heliotrop, is reaping the rewards, reports Compound Semiconductor.
Monday 28th October 2013
The solid-state lighting revolution will be spurred by plummeting LED costs and improvements to the quality of emitted light. Success on these fronts could be aided by refinements to existing technologies; the introduction of GaN-on-silicon LEDs; a move to colour mixing of red, green and blue LEDs; and a switch from LEDs to lasers at the primary lighting source. All options were discussed at the International Conference on Nitride Semiconductors. Richard Stevenson reports
Monday 21st October 2013
Green LEDs don't deliver the same level of performance as their red and blue cousins. However, by decreasing the current density with a larger chip and optimising growth conditions to reduce dark spots it is possible to close that gap with LEDs that hit 190 lumens per watt at a 100 mA drive current, says Osram�s Andreas L�ffler and Michael Binder.
Friday 18th October 2013
After nearly a decade of development, Glo's nanowire LEDs are slated to reach market early next year. Compound Semiconductor talks to Glo chief technology officer, Nathan Gardner, to find out more.
Thursday 17th October 2013
Grown in an MOCVD reactor, nitride films tend to yield fewer defects than when they are formed in MBE chambers. But this gap in material quality can disappear with high-temperature ammonia MBE, which produces epitaxial structures with outstanding electrical characteristics, argues Alexey Alexeev and Stanislav Petrov from SemiTEq.
Thursday 10th October 2013
Following its Oclaro acquisition, II-VI now intends to simplify operations, re-think manufacturing and pursue new products. Compound Semiconductor reports.

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