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Friday 25th January 2013
Optoelectronics developer, Zephyr Photonics, has set its sights on datacoms and high performance computing markets as it launches a fab and foundry business, reports Compound Semiconductor.
Friday 18th January 2013
Silicon photonics and high-density data storage could benefit from a printing process that enables GaAs lasers on new platforms
Friday 18th January 2013
Despite a major re-shuffle in the epiwafer market, analysts predict a stable year for the compound semiconductor industry. Compound Semiconductor talks to Strategic Analytics directors, Eric Higham and Asif Anwar, to find out more.
Friday 11th January 2013
As sapphire substrate makers brace for a year of consolidation, 2013 could deliver the killer application, reports Compound Semiconductor.
Thursday 10th January 2013
Simulations suggest that increasing the number of wells is a great way to combat the mysterious malady known as droop. The optimum number of wells depends on the current density, and it could be a dozen or more, says Simon Li and Changsheng Xia from Crosslight software.
Wednesday 2nd January 2013
White LEDs are efficient, robust, long lasting and dimmable, but they are often let down by a colour quality that is inferior to incandescents. How can this weakness be addressed? By introducing a range of phosphors that deliver broadband emission and ultimately enhance colour fidelity, argues Faiz Rahman from Electrospell.
Friday 21st December 2012
To bring down the cost of solid-state lighting, chipmakers must move to more efficient, automated, high-yield manufacturing on larger substrates. Foundations to support such a move are moving quickly into place: Wafer geometries and marking conventions for 150 mm sapphire are largely set, and work on standards for equipment hardware and software interfaces are well underway, writes Paula Doe from SEMI.
Thursday 20th December 2012
Samsung's Galaxy smartphones are amongst the first mass-produced 3G handsets to feature high-performance CMOS power amplifiers. Will silicon displace GaAs in this sector, asks Compound Semiconductor.
Tuesday 18th December 2012
By far the best way to slash the cost of LEDs so that this form of lighting can take over is to grow the device structures on 200 mm silicon. On this platform, the big challenge is to address the thermal and lattice mismatches that can introduce distortions and imperfections in the GaN-on-silicon epiwafers. The good news is that it is possible to form high-quality, device-grade epilayers that are free from a low-temperature AlN layer and SiN interlayers with in-situ monitoring and growth optimisation, says Sudhiranjan Tripathy from IMRE, Singapore.
Monday 17th December 2012
Blue VCSELs could produce continuous-wave emission following improvements to the indium tin oxide current-spreading layer
Friday 14th December 2012
GaAs photovoltaic developer, Semprius, looks set to shine in a solar market where so many are fading, reports Compound Semiconductor.
Monday 10th December 2012
Forming high-quality GaN via growth through holes and coalescence, using sputtering to form high-quality nitride films on metal foil and increasing the versatility of this class of material with the addition of scandium all featured at the recent IWN meeting. Stephan Knoll from the University of Cambridge reports.
Friday 7th December 2012
Which SiC transistor will industry choose? Compound Semiconductor talks to Jeff Casady, ex-chief technology officer of SemiSouth and now at Cree, to find out more.
Wednesday 5th December 2012
Adding an electron-emitting region based on the pairing of AlInGaN and InGaN creates brighter, more robust LEDs that are less prone to droop
Monday 3rd December 2012
Metrophotonics' folding in late 2005 was a blessing for one its former employees, Valery Tolstikhin. It encouraged him to try and fulfil his dream of founding a firm with a radically different business model: Using pure-play RF foundries to make optical devices from photonic integrated circuits. Richard Stevenson quizzes him on the details of this vision and the successes to date.
Friday 30th November 2012
Following the demise of SemiSouth, what does the future hold for other SiC power transistor manufacturers, asks Compound Semiconductor.
Friday 23rd November 2012
A heady mix of Chinese subsidies, disappointing LED lighting sales and near-saturation in back-lighting markets has tipped makers of MOCVD reactors off-kilter. Where next for the equipment manufacturers, asks Compound Semiconductor.
Friday 16th November 2012
Falling bulk gallium nitride costs could soon see the high bandgap substrates displacing cheap silicon wafers. Compound Semiconductor investigates.
Friday 9th November 2012
Will the Australia-based firm's low temperature deposition technology take the strain away from LED manufacturing, asks Compound Semiconductor.
Wednesday 7th November 2012
All systems go for high-brightness pico-projectors as Osram Opto Semiconductors launches green laser diodes, reports Compound Semiconductor.
Monday 5th November 2012
Makers of smartphones and tablets place great importance on the efficiency of amplifiers because this governs battery life. WIN Semiconductors’ latest H2W process has been developed to address that need: It unites on a single die pHEMT featuring a very low insertion loss and a highly linear HBT, says the company’s Andy Tsai.
Friday 2nd November 2012
Dislocation-free crystals can be made by forming GaN points seeds by the sodium-flux method and joining them together via coalescence.
Monday 29th October 2012
How can we accelerate VCSELs to the speeds needed in chip-to-chip optical interconnects? Add a little strain to the quantum wells, tune the photon lifetime and trim cavity size and oxide capacitance, suggest Chuan Xie, Neinyi Li, Phillip Brow and Kenneth Jackson from Sumitomo Electric Device Innovations.
Friday 26th October 2012
Will a new raft of GaN-on-Si materials systems speed the LED industry's switch to silicon, asks Compound Semiconductor.

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