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Wednesday 9th March 2016
The key to producing novel ICs with high efficiency and great functionality is to employ CMOS foundry process flows for the monolithic integration of silicon and III-V devices BY DAVID KOHEN, ABDUL KADIR, KENNETH LEE, FAYYAZ SINGAPOREWALA AND EUGENE FITZGERALD FROM SINGAPORE-MIT ALLIANCE FOR RESEARCH AND TECHNOLOGY
Tuesday 16th February 2016
Optical spectroscopy exposes fundamental flaws in the well-known model for LED droop BY ANDREAS HANGLEITER AND TORSTEN LANGER FROM THE TECHNISCHE UNIVERSITÄT BRAUNSCHWEIG, GERMANY
Tuesday 16th February 2016
The front-ends of smartphones should not be served by a single material. Instead, to ensure sufficient performance, they should combine a GaAs-based power amplifier with a silicon-on-insulator switch and filters made from piezolelectricsBY JAMES YOUNG FROM SKYWORKS
Monday 8th February 2016
Sales of SiC substrates will rise significantly as shipments shift to the 6-inch format and established suppliers face increased competition from Chinese start-ups. Pierric Gueguen, an analyst from Yole Développement covering the power electronics and compound semiconductor markets, discusses all this and more in an interview with Richard Stevenson.
Monday 21st December 2015
Grow GaN transistors on silicon and their bang-per-buck increases, widening deployment from defence markets to mainstream commercial applicationsBY TOM KOLE FROM MACOM
Monday 30th November 2015
From the buffer layer to the very top of the device, a novel form of SIMS can uncover troublesome impurities in GaN-on-silicon HEMTs BY TEMEL H. BUYUKLIMANLI AND CHARLES W. MAGEE FROM EVANS ANALYTICAL GROUP
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Monday 16th November 2015
SiC MOSFETs can be made as cheaply as silicon IGBTs by processing 150 mm epiwafers on silicon linesBY SUJIT BANERJEE, KEVIN MATOCHA AND KIRAN CHATTY FROM MONOLITH SEMICONDUCTOR
Monday 16th November 2015
Optimising V-shaped pits combats droop by preventing carriers from disappearing into non-radiative threading dislocations  BY CHIAO-YUN CHANG, HENG LI AND TIEN-CHANG LU FROM THE NATIONAL CHIAO TUNG UNIVERSITY
Wednesday 11th November 2015
More efficient power switching devices are required to meet the energy demands forecasted over the next 20 years. BY BRYAN BOTHWELL, DAVID DRUMMOND AND MANYAM PILLA FROM QORVO, AND HUILI GRACE XING AND DEBDEEP JENA FROM CORNELL UNIVERSITY
Wednesday 11th November 2015
To lower losses in power conversion units, European project HiPoSwitch has established processes and infrastructure for low-cost manufacture of GaN-on-silicon HEMTs.BY JOACHIM WÃœRFL FROM THE FERDINAND-BRAUN-INSTITUT (FBH), BERLIN
Monday 2nd November 2015
Researchers continue to debate the cause of the fall in LED efficiency at higher drive currentsBY SAIKAT DAS, VITALIY AVRUTIN, ÃœMiT ÖZGÃœR AND HADiS MORKOÇ FROM VIRGINIA COMMONWEALTH UNIVERSITY AND ARVYDAS MATULIONIS FROM CENTER OF PHYSICAL SCIENCES AND TECHNOLOGY, VILNIUS
Monday 2nd November 2015
Single-wafer systems combine great levels of uniformity with minimal maintenance and an easy route from development to high-volume production, making them ideal for the production of GaN-on-silicon HEMTsBY SUDHAKAR RAMAN, SOMIT JOSHI AND GEORGE PAPASOULIOTIS FROM VEECO INSTRUMENTS
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Monday 2nd November 2015
A revolution in Raman spectroscopy allows routine mapping of SiC wafers in little more than an hour. 
Wednesday 14th October 2015
The dot-com boom and the explosion in handset sales have ramped up the production of GaAs chips, and enabled their reliability to rival those made from silicon BY BILL ROESCH FROM QORVO
Thursday 8th October 2015
Richard Stevenson quizzes NREL principle scientist Sarah Kurtz on the progress of CPV, the false dawns of this technology, and what must happen for this technology to truly take off
Thursday 8th October 2015
Founded on the promise of delivering a superior tool for modelling laser diodes, Crosslight has blossomed into a provider of a range of software for understanding III-V technologies
Monday 5th October 2015
During the last 20 years the LED has progressed from being a niche product to backlighting billions of screens and illuminating countless homes and offices.BY BOB STEELE, INDEPENDENT CONSULTANT IN SOLID-STATE LIGHTING
Monday 5th October 2015
In the early 1990s, the US led the development of an infrastructure for GaAs MMIC manufacturing. The result: A technology that lies at the heart of the mobile wireless revolution.BY ERIC HIGHAM FROM STRATEGY ANALYTICS
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Monday 21st September 2015
The compound semiconductor industry will be even more healthy in 2035 than it is today, thanks to emergence of ultrafast wireless, soaring sales of electric cars and ubiquitous LED lighting
Wednesday 16th September 2015
Lasertec, a supporter of semiconductor engineers for decades, continues to refine its SiC inspection and analysis tool that aids identification and minimization of various defects.BY YUJI ASAKAWA FROM LASERTEC
Wednesday 16th September 2015
Glance through the premier issue of Compound Semiconductor and you’ll find articles about improving the efficiency of traffic lights, developing blue VCSELs and the birth of the GaN LED.
Wednesday 29th July 2015
Existing and emerging opportunities for GaN transistors and ways to make them even better lay at the heart of this year’s CS Mantech. By Richard Stevenson
Wednesday 29th July 2015
A concise, multi-author treatise discusses issues relating to the efficiency, linearity and manufacturability of silicon power amplifiersBY RICHARD STEVENSON
Tuesday 21st July 2015
Reflection anisotropy spectroscopy exposes defects and anti-phase domains that can destroy the performance of III-V- on-silicon devices BY OLIVER SUPPLIE, SEBASTIAN BRUECKNER, MATTHIAS M. MAY AND THOMAS HANNAPPEL FROM TU ILMENAU
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