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Wednesday 21st December 2005
HB-LED manufacturers should concentrate on building relationships with their customers in order to break down the incumbent culture based around the Edison light bulb, say analysts.
Wednesday 21st December 2005
New broadband wireless access protocols could provide a market for GaN transistors before any significant activity from the third-generation cellular business appears, writes Michael Hatcher.
Wednesday 21st December 2005
Designers are exploiting increasingly sophisticated strategies, such as surface roughening and incorporating photonic crystals, to boost efficiency and enhance light output. Susan Curtis reports.
Tuesday 22nd November 2005
The 6 inch GaAs production facility at Filtronic has moved from making monthly losses of $2 million to becoming a near-profitable operation, thanks to huge orders for PHEMT switches from RF Micro Devices. Richard Stevenson visits the Filtronic fab at Newton Aycliffe, UK.
Tuesday 22nd November 2005
Whether it was 40G, tunable lasers or storage-area networking, optical-component vendors were in resurgent mood at the recent European Conference on Optical Communications. Tami Freeman and Joe McEntee conclude that the next year holds many opportunities for innovative suppliers.
Tuesday 22nd November 2005
The Canadian government has invested C$43 million in building a compound semiconductor fabrication facility that it hopes will drive the growth of start-ups and small businesses. Richard Stevenson talks to the facility's director, Sylvain Charbonneau.
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Tuesday 22nd November 2005
At September's ICSCRM conference Cree launched 4 inch SiC material, demonstrated how to grow high-quality epitaxial layers in larger multiwafer planetary reactors, and revealed improvements in yield that are produced by reducing basal plane dislocations. Richard Stevenson reports.
Tuesday 22nd November 2005
The high cost of SiC substrates is hampering the commercialization of GaN-based RF devices, while silicon's low-cost platform suffers from inferior thermal conductivity. Silicon-on-polycrystalline-SiC substrates are one alternative, say Picogiga's Jean-Luc Ledys and Soitec's Fabrice Letertre.
Tuesday 22nd November 2005
As the Chinese market for cell phones goes from strength to strength, Michael Hatcher finds out which RF chip suppliers are making inroads into the local Chinese brands and asks whether a recent design win by CMOS power amplifier maker Silicon Laboratories is a sign of things to come.
Tuesday 25th October 2005
The NASA Jet Propulsion Laboratory's quantum well infrared photodetector (QWIP) program has advanced from fabricating singleband detectors to imagers with multiple spectral bands. Sarath Gunapala explains why the latest detectors will benefit weapons detection and remote sensing.
Tuesday 25th October 2005
Mounting HEMTs on AlN ceramic substrates is one technique for improving the thermal management that currently limits the performance of GaN-based RF power electronics. Jo Das and Marianne Germain from the Interuniversity Micro Electronics Center (IMEC) in Belgium outline this approach and the advantages it offers over competing technologies.
Tuesday 25th October 2005
Integrating an infrared camera into a Raman microscope produces the ideal tool for improving the reliability of GaN HFETs, says Bristol University's Martin Kuball.
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Tuesday 25th October 2005
Fiber-optic component manufacturers Finisar and Avanex believe their financial and technological strategies will bear fruit next year in the form of profitability.
Tuesday 25th October 2005
Wednesday 21st September 2005
Compound Semiconductor magazine is 10 years old. And, just like most of the rest of the industry, it has been through a few ups and downs during that time. Here, we take a look back at some of the highlights - and lowlights - that have shaped the industry over the past decade.
Wednesday 21st September 2005
Compound Semiconductor magazine is 10 years old. And, just like most of the rest of the industry, it has been through a few ups and downs during that time. Here, we take a look back at some of the highlights - and lowlights - that have shaped the industry over the past decade.
Wednesday 21st September 2005
High-speed MMICs with lower turn-on voltages can be built by switching GaAs-HBTs for GAIN-HBTs with a dilute nitride base, say Matt Micci and Roger Welser. The advancement could allow mobile phone designers to build more reliable handsets operating at higher data-rates.
Wednesday 21st September 2005
At the height of the photonics boom, Dave Welch helped orchestrate the merger of SDL and JDS Uniphase. Now chief technology officer at start-up Infinera, he's led the development of a digital optical network system based on massively integrated InP chips. Michael Hatcher hears about Infinera's recipe for success as growth returns to the optical telecoms business.
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Wednesday 21st September 2005
A tunable laser and a broadband modulator provide the best option for next-generation metro networks, according to Bookham. This combination can ease the transition from fixed-wavelength components to broadband monolithic transmitters. Richard Stevenson reports.
Tuesday 9th August 2005
New executive director of the Optoelectronics Industry Development Association Michael Lebby is sounding a wake-up call to optoelectronic chip manufacturers. Michael Hatcher talks to him about a foundry-based industry model for InP optoelectronics and the roadmap to profitability.
Tuesday 9th August 2005
With its cost-efficient InP HEMT and HBT processes on 100 mm substrates, Northrop Grumman Space Technology (NGST) is well positioned to produce power devices for next-generation cellphones. That was the message from Richard Lai, NGST’s manager of microelectronics products, to delegates at the recent Indium Phosphide and Related Materials conference held in Glasgow, UK.
Tuesday 9th August 2005
Swedish start-up Comlase has developed an ingenious technique for protecting the surface of semiconductor laser chip facets. Oliver Graydon reports on the company’s Nitrel treatment, which promises to boost the durability, output power and reliability of all types of laser diode.
Tuesday 9th August 2005
InGaAs cameras are now being used to find bruising in fruit, sort plastics for recycling, and help the glass-bottle manufacturing industry detect defects. This penetration into new markets is being driven by the availability of cheaper, higher-quality InGaAs material, reports Martin Ettenberg of Sensors Unlimited.

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