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Monday 22nd October 2012
Although silicon power transistors are inferior to their GaN rivals in many regards, they win hands-down in the metric that matters most: Cost. However, affordable GaN HEMTs are within reach, when production moves to 200 mm GaN-on-silicon epiwafers processed on standard CMOS lines, argues imec’s Brice De Jaeger, Marleen Van Hove and Stefaan Decoutere.
Friday 19th October 2012
Yet again AkzoNobel is increasing capacity at its Texas-based speciality chemicals production site. Compound Semiconductor finds out exactly what is driving growth.
Monday 15th October 2012
The miniscule scratches and pits found on the surface of SiC substrates spawn yield-killing defects in the epiwafers. It is not possible to pick-up these minor imperfections and track their consequences with conventional light-scattering inspection tools, but this can be done with our detection systems employing confocal optics and differential interferometry, argues Yuji Asakawa from Lasertec Corporation.
Friday 12th October 2012
Reductions in external quantum efficiency at high current densities diminish when p-doped InGaN is inserted after the electron-blocking layer.
Monday 8th October 2012
The performance of LED light bulbs is impaired when delamination occurs within or between the parts that make up a packaged device. These deficiencies cannot be detected by widely used characterisation techniques such as X-ray and infrared microscopy, but they are exposed with acoustic imaging at very high frequencies, according to Tom Adams, a consultant to Sonoscan.
Thursday 4th October 2012
Returning home in the early 1980s without a job to go to, Ian Neale had a big decision to make about his future. Hindsight shows that he got it right when he decided to launch Hiden Analytical, a highly successful metrology firm that is now celebrating its thirtieth anniversary. Richard Stevenson reports.
Friday 28th September 2012
Singapore and MIT partners have joined forces with Global Foundries to drive III-V CMOS integration forward. Compound Semiconductor talks to Professor Eugene Fitzgerald from MIT to find out more.
Monday 24th September 2012
Separating the phosphor from the blue-emitting chip is a great way to improve the performance of LED light bulbs, according to Mitch Jansen from Intematix. With this architecture bulbs are brighter, their emission more uniform, and they last far longer, thanks to superior thermal management.
Friday 21st September 2012
Are China-based SiC epi-wafer makers ready to take on US and Japan industry heavyweights, asks Compound Semiconductor.
Tuesday 18th September 2012
Theorists point the finger at carrier leakage, compositional fluctuations and threading dislocations
Monday 17th September 2012
SiC chipmakers from all over the world have been recently releasing SiC products, including high-current diodes and high-voltage MOSFETs and JFETs. Many of these devices, and some of the modules that were built with them, were unveiled at the fourth International SiC Power Electronics Applications Workshop. Enrique Lamoureux reports from this event.
Thursday 13th September 2012
Researchers at a small, Canadian start-up have unveiled simple test structures that emit incredibly bright green light. Have they filled the green gap, asks Compound Semiconductor.
Monday 10th September 2012
Today’s conventional triple-junction cells seem to offer little room for improvement, with average production efficiencies hovering just below 30 percent. This can be increased by ten percentage points with a switch to six junction cells incorporating two dilute nitride layers, say Simone Missirian, Jeff Allen, Vijit Sabnis and Homan Yuen from Solar Junction.
Monday 10th September 2012
A novel crystal growth process could ease GaN substrate production bringing brighter, more efficient LEDs. Compound Semiconductor talks to the researchers behind the hope.
Friday 7th September 2012
Better material quality and chip encapsulation drive up the power and efficiency of deep UV LEDs
Thursday 6th September 2012
Vast swings in MOCVD reactor shipments, stagnation in LED sales in the build up to the solid-state lighting revolution and technologies to slash the cost of chips for LED light bulbs featured at euroLED 2012. Richard Stevenson reports.
Wednesday 5th September 2012
Optimisation of cavity lengths and facet reflectivity yields powerful, efficient semi-polar lasers
Tuesday 4th September 2012
GaN devices have the potential to capture a billion dollar power market for electrified vehicles. But if they are to be successful, they need to sell for little more than silicon products, have higher threshold voltages than they do today, show no signs of current collapse and deliver very high currents, argue Ming Su and Chingchi Chen from Ford Motor Company.
Monday 20th August 2012
Experimental measurements of LED droop are replicated with a model that includes carrier leakage
Wednesday 15th August 2012
Researchers have developed a novel, vertical transistor that outperforms typical MOSFETs. Compound Semiconductor talks to the Japanese team behind the device that promises to deliver smaller, faster electronics.
Monday 13th August 2012
Strain-balanced QCLs deliver continuous-wave output powers in excess of 500 mW at wavelengths as short as 3.4 µm
Friday 10th August 2012
Blue laser diode inventor, Shuji Nakamura, recently unveiled a non-polar violet VCSEL, claiming 'one of the biggest breakthroughs in laser diode technology'. Compound Semiconductor talks to Nakmura and industry colleagues, to find out more.
Monday 6th August 2012
A novel material system produces powerful, continuous-wave laser emission at 536 nm, an ideal wavelength for the green source in pico-projectors
Monday 30th July 2012
GaN-on-silicon products will become far more competitive when processing is carried out at fully depreciated 200 mm silicon fabs. This requires the use of very flat wafers, which can be formed through the introduction of rare oxide epi-layers that can also enhance the performance of LEDs, transistors and solar cells, say Michael Lebby, Andrew Clark and Guoying Ding from Translucent.

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