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Thursday 23rd December 2010
Calculations indicate that InGaN solar cells can deliver higher efficiencies if a N-polar form of the material is employed.
Wednesday 22nd December 2010
Antiphase boundaries are suppressed by artificially creating double atomic steps on a rounded thin Ge buffer layer by annealing the Ge surface at a temperature above the Ge surface roughening point.
Tuesday 21st December 2010
A dozen or so companies are developing ultraviolet and white LEDs for market. In two to four years time products will launch and kick-on to net over $400 million by 2015, according to NanoMarkets analyst Lawrence Gasman. Richard Stevenson investigates.
Monday 20th December 2010
The concentrated photovoltaics industry should deliver massive growth over the next few years, according to market analyst Carlos Márquez from CPV Today. But this success requires recent installations to demonstrate that this technology can generate electricity reliably, while offering investors a good return on their money. Richard Stevenson reports.
Thursday 16th December 2010
Scientists at MIT and Sandia National Labs have demonstrated a new tetrahertz laser which does not need supercooling. It can detect explosives and operates at higher temperatures than some thought possible.
Thursday 9th December 2010
Calculations based on perturbation theory reveal that the Auger non-radiative recombination process in bulk InGaN is not nearly strong enough to account for LED droop.
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Thursday 2nd December 2010
The diode dramatically reduces power losses and can be employed in the production of power conditioning of solar power systems, motor drive circuits and in inverter and power factor correction (PFC) circuits.
Monday 22nd November 2010
Scientists at SEI have shown that green laser diodes grown on the semi-polar GaN plane have half the threshold current of green LDs grown on the commercially used GaN c-plane.
Friday 12th November 2010
Researchers in Austria and the U.S.A have demonstrated a novel room temperature lateral etching process which can be applied to AlGaAs devices with arbitrary aluminum content.
Tuesday 9th November 2010
Diversification: that’s the central pillar of RF Micro Devices’ growth strategy. To continue to execute on that front it is opening up its MBE facility and starting to offer various services that include shipments of arsenic- and phosphorous-based epiwafers. Richard Stevenson investigates.
Tuesday 9th November 2010
High costs and long development times are impairing the chances of success for small companies pioneering novel devices based on photonic integrated circuits. To cater for these needs, Europe is funding the creation of an InP foundry that will use generic processes to create devices for multiple applications. Richard Stevenson discusses this venture with the project's two coordinators, David Robbins from Willow Photonics and Meint Smit from the Technical University of Eindhoven.
Tuesday 26th October 2010
Gate scaling is the key to penetrating the depths of the sub-millimeter-wave frequency range. It improves RF performance, empowering active electronics at these ultra-high frequencies, say Axel Tessmann, Ingmar Kallfass and Arnulf Leuther from Fraunhofer IAF.
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Thursday 21st October 2010
The emergence of 4G smartphones is placing a tremendous strain on mobile carriers. But this can be relieved by adding femtocells to the network that are built around customized high performance power amplifiers, such as the portfolio of products being unveiled by Anadigics, argues the company’s Joe Cozzarelli.
Tuesday 28th September 2010
Researchers at the University of Sheffield, UK, have developed a technique for making GaAs-based lasers that circumvents regrowth on exposed AlGaAs surfaces. Avoiding re-growth on this ternary is highly desirable, because it is difficult to adequately planarize AlGaAs without degrading the corrugated GaAs grating needed to form single-wavelength, distributed feedback lasers.
Tuesday 28th September 2010
Engineers at Chang Gung University, Taiwan, have almost doubled the external quantum efficiency (EQE) of LEDs featuring relatively wide wells. This gain resulted from switching the electronblocking layer from a superlattice structure to a 20 nm thick AlGaN layer.
Thursday 23rd September 2010
The 2.2 kW static induction transistor developed by Microsemi is destined for success. It delivers unprecedented powers and a long lifetime, and it allows UHF radar manufacturers to build systems with far fewer components, say the company’s Mike Mallinger, Bruce Odekirk, Mar Caballero and Francis Chai.
Thursday 23rd September 2010
Engineers at the University of California, Santa Barbara, (UCSB) have shown that AlGaN barriers hold the key to the growth of a high-quality active region for a green semipolar laser.
Thursday 23rd September 2010
The battles in the solar industry at present are typical of an emerging industry as companies compete for market share as well as touting their technology as the answer to the industry challenges. But what is the true state of solar technology and how does it stand up to some objective observation. St.J. Dixon-Warren and Tim White of Chipworks discuss their findings when they looked under the hood of CIGS Solar Panels.
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Tuesday 21st September 2010
GaN power devices are smaller and more efficient than equivalents made from silicon. But significant commercial success will only follow when their manufacturing costs fall, a goal that can be realized by turning to production on 150 mm silicon CMOS processing lines, writes Michael Briere on behalf of International Rectifier.
Tuesday 14th September 2010
Since the late 1990s Integra has been manufacturing pulsed, S-band silicon transistors for radar. It has recently expanded its portfolio with GaN versions that are smaller, more efficient, and deliver gain over a far broader bandwidth. Richard Stevenson tracks this new venture.
Tuesday 14th September 2010
TriQuint claims that it has broken the power added efficiency (PAE) record for GaN onsilicon HEMTs operating at 10 GHz.
Monday 13th September 2010
Tried-and-true strategies for speeding-up InP HEMTs are clarifying the path to extending the bandwidth of their GaN cousins to millimeter-wave frequencies. Significant progress was realized by switching from the familiar pairing of AlGaN and GaN to an AlInN and GaN heterostructure, which combines weaker surface depletion and better vertical scaling with apparently higher carrier velocities, according to Colombo Bolognesi from ETH-Zurich and Nicolas Grandjean from EPFL.
Thursday 2nd September 2010
Researchers from Fraunhofer, Germany and the Institute of Photonics, Scotland have developed high-performance semiconductor disk lasers for the wavelength range 1.9 - 2.8µm. This has opened up new opportunities in gas sensing, communications, and materials processing.
Monday 16th August 2010
A US collaboration led by Sensors Electronic Technology (SET) claims to have raised the bar for power output from a single ultraviolet LED chip. The team, which includes researchers from Rensselaer Polytechnic Institute and the US Army Research Laboratory, has produced a 273 nm chip emitting 30 mW, and a 247 nm version delivering 6 mW.

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