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Monday 20th July 2015
High-efficiency CPV could become a reality for rooftops by uniting microscale solar cells with a planar microtracking concentrator technology BY JARED PRICE AND CHRIS GIEBINK FROM THE PENNSYLVANIA STATE UNIVERSITY AND XING SHENG AND JOHN ROGERS FROM THE UNIVERSITY OF ILLINOIS AT URBANA-CHAMPAIGN
Thursday 16th July 2015
Doping of GaN with europium enables a red LED to join forces with blue and green cousins and form a monolithic, full-colour chip BY YASUFUMI FUJIWARA FROM OSAKA UNIVERSITY AND WOJCIECH JADWISIENCZAK AND FAIZ RAHMAN FROM OHIO UNIVERSITY
Tuesday 14th July 2015
Laser-pumped phosphors create more compact and efficient headlamps that double driver visibilityBY ABDELMALEK HANAFI AND HELMUT ERDL FROM BMW
Friday 10th July 2015
Terrestrial opportunities for III-V cells are not limited to concentrating photovoltaics: These devices can also form flexible, efficient power sources for unmanned aircraft, smartphones, tablets and automobiles. By Robert Parenti from Alta Devices
Friday 26th June 2015
Vertical GaN MOSFETs with a hexagonal layout are now meeting the requirements for automotive applications 
Wednesday 24th June 2015
Are parasitic currents in p-type layers holding back the efficiency of many commercial LEDs?BY GREG TOGTEMA FROM LAKEHEAD UNIVERSITY AND K. SCOTT BUTCHER FROM MEAGLOW
Monday 22nd June 2015
Automated reactors that accommodate more wafers and in-situ cleaning drive down the cost of making wide bandgap devices for power electronicsBY CHRISTOPH GIESEN AND MICHAEL HEUKEN FROM AIXTRON
Thursday 18th June 2015
Lux Research forecasts novel circuit design, and more, will sustain silicon's mammoth market share and stunt compound semiconductor growth. Rebecca Pool reports.
Monday 15th June 2015
Stressor layers that crank up the speed of electrons are enabling a novel form of GaN-on-silicon transistor to offer a promising route to maintaining the march of Moore’s law BY SUBRAMANIAM ARULKUMARAN AND GEOK ING NG FROM NANYANG TECHNOLOGICAL UNIVERSITY, SINGAPORE
Monday 8th June 2015
Wafer-bonding can create powerful terahertz lasers for real-time imaging of hidden weapons, illicit drugs and forms of cancerBY MARTIN BRANDSTETTER, CHRISTOPH DEUTSCH, MICHAEL KRALL AND KARL UNTERRAINER FROM VIENNA UNIVERSITY OF TECHNOLOGY
Monday 1st June 2015
Makers of solid-state lighting should turn to aluminium nanoceramics to cut the cost of thermal management in high-power LEDsBY RALPH WEIR FROM CAMBRIDGE NANOTHERM
Wednesday 13th May 2015
Perfected packages housing advanced emitters are yielding brighter, more efficient sources
Monday 11th May 2015
A novel form of MBE known as metal-modulated epitaxy could improve the performance of LEDs, transistors and solar cells, by delivering a breakthrough in p-type doping.
Thursday 7th May 2015
Vertical electron transport and a well-defined junction make the InP HBT the best building block for powerful, high frequency amplifiers
Tuesday 5th May 2015
What’s the trick to growing high-quality GaAs on silicon? It’s inserting a layer of graphene between them.
Friday 1st May 2015
From integrated circuits to solar, ultraviolet curing and electronic systems in electric vehicles, deployment of compound semiconductor chips is going to rise throughout this decade.
Tuesday 28th April 2015
Will ease of integration spur eventual dominance of the CMOS power amplifier, or will GaAs continue to reign, thanks to superior performance?
Monday 23rd March 2015
Superluminescent diodes marry the virtues of LEDs and laser diodes by offering droop-free emission from a high-quality beam that can deliver speckle-free projection 
Wednesday 11th March 2015
Can terahertz HEMTs result from a switch from GaN to InN channels?BY JÁN KUZMÍK FROM THE SLOVAK ACADEMY OF SCIENCES
Wednesday 11th March 2015
Many paths to optimal colour mixing will accelerate the adoption of solid-state lightingBY SERGEY KARPOV FROM THE STR GROUP (SOFT - IMPACT)
Tuesday 3rd March 2015
After decades of playing second fiddle to sputtering in the silicon industry, electron beam evaporation now dominates in the compound semiconductor industry, thanks to its inherent advantage in the lift-off process  BY IMRAN AMIRANI FROM FERROTEC
Tuesday 3rd March 2015
Laser diodes can be more powerful when they employ facets with equal reflectivity, and brighter when they features an architecture that trims the number of lateral modes RICHARD STEVENSON REPORTS
Sunday 1st February 2015
Wafer bonding forms high-performance devices with insulating and conducting interfaces.BY MARTIN EIBELHUBER, CHRISTOPH FLÖTGEN AND PAUL LINDNER FROM EV GROUP
Sunday 1st February 2015
MOSFETs made from SiC can plummet in price when the cubic form of this material is grown on large silicon substratesBY PETER WARD FROM ANVIL SEMICONDUCTORS

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