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Features


Monday 15th April 2013
Direct Auger recombination causes droop, but its impact can be diminished inserting graded layers into quantum wells to smooth the confining potentials.
Thursday 11th April 2013
How can LED epiwafers costs fall to a level that can spur mass adoption of solid-state lighting? By turning to growth on 200 mm silicon substrates, loaded into a multi-wafer MOCVD reactor equipped with advanced thermal management and optimised wafer recesses, argues Aixtron’s Boerge Wessling.
Friday 5th April 2013
As long wavelength ultraviolet LEDs penetrate commercial curing markets, shorter wavelength counterparts prepare to take on water sanitation, wireless handset disinfection and more. But will substrate and epitaxy issues stymie progress, asks Compound Semiconductor.
Thursday 28th March 2013
As MOCVD tool makers hang on for the LED upturn, an unexpected entrant from China is hoping to muscle in on the market share. Compound Semiconductor looks at AMEC's master-plan.
Thursday 28th March 2013
Firms developing and producing GaN-on-silicon devices for the power electronics industry come in many different flavours. Some sell on the open market; some just ship to a chosen few; others offer foundry services; and there are also those that form partnerships. Zel Diel, Managing Director of Venture-Q LLC, considers these various approaches and their implications, before looking at how far companies have progressed towards commercialization of their technology.
Wednesday 27th March 2013
Surface activated bonding of GaAs and silicon substrates can yield high-quality heterojunctions, according to electrical characterization and microscopy.
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Monday 25th March 2013
Multiple markets beckon for substrate-emitting, miniature LEDs
Friday 22nd March 2013
Liftoff coatings require specific rules of deposition (normal or 90o) incidence angle be maintained to prevent metal deposition onto resist via sidewalls.
Friday 22nd March 2013
Will Cree's $10 LED light bulb end America's century-long incandescent love affair, asks Compound Semiconductor.
Thursday 21st March 2013
Growth of non-polar GaN on m-plane sapphire is realized without buffer layers and nitridation processes
Monday 18th March 2013
Impact ionization, carrier trapping and leakage paths prevent the channels in today’s HEMTs from providing great transport links between their sources and drains. But improvements should follow, now that these maladies can be exposed with optical and electrical techniques, argue Nicole Killat and Martin Kuball from the University of Bristol.
Friday 15th March 2013
Wide quantum wells that are free from internal electric fields combat droop and enable high efficiencies at high drive currents
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Friday 15th March 2013
Qualcomm's new radio chipset may take us closer to a global 4G phone, but does it really signal an end to GaAs power amplifiers in handsets, asks Compound Semiconductor.
Thursday 14th March 2013
Even veterans of reliability measurements struggle to provide customers with predictions of the future reliability of a lot that exhibits early fallout in the factory. That’s because, until recently, it’s been very difficult to gather the data needed to respond with a specific and satisfying answer, says Bill Roesch from TriQuint Semiconductor.
Friday 8th March 2013
Will hybrid silicon be the platform of choice for complex photonic integrated circuits? Compound Semiconductor talks to Martijn Heck from the University of California, Santa Barbara, to find out more.
Friday 1st March 2013
As photovoltaic inverter manufacturers adopt SiC MOSFETs, when will other industries move towards wide bandgap devices, asks Compound Semiconductor
Thursday 28th February 2013
Can the high brightness LED developer unlock the potential of nitride-based LEDs?
Tuesday 26th February 2013
Infrared edge emitters and VCSELs are targeting a growing number of lucrative markets: Gaming, ultra-high density data storage, finger navigation and optical cables for USB and HDMI interconnects. Oclaro’s Robert Blum and Karlheinz Gulden discuss them all in detail.
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Thursday 21st February 2013
Introductions of new wireless communication standards are forcing makers of RF Front End components to build products with higher linearity. Silicon-on-sapphire devices excel in this area and, thanks to our UltraCMOS process and accelerated roadmap, the performancegap is expected to continue to grow, versus known competitive technologies such as GaAs, says Rodd Novak from Peregrine Semiconductor Corporation.
Wednesday 13th February 2013
As the RF components market remains robust, RF Micro Devices, Skyworks, and TriQuint are vying for market share. Compound Semiconductor talks to Dale Pfau from global finance firm, Cantor Fitzgerald, about the winners and the losers.
Monday 11th February 2013
The most promising building blocks for the 11 nm node are the pairing of III-V and germanium transistors. Device development is still in its infancy, but research presented at IEDM 2012 indicates that significant progress is being made. Richard Stevenson reports.
Friday 8th February 2013
Business is buoyant for exotic solar cells in space, but back on Earth the industry limps on. Compound Semiconductor talks to Emcore to find out more.
Thursday 7th February 2013
High-quality growth of LEDs on silicon is notoriously difficult, with stresses and strains causing wafers to bow. But these problems are not insurmountable: Plessey Semiconductors is now churning out GaN-on-silicon LED chips from flat epiwafers using a recipe developed at the University of Cambridge. Richard Stevenson reports.
Friday 1st February 2013
Do Cree's rising sales finally signal sustained growth for the LED industry, asks Compound Semiconductor.

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