Quintessence Photonics has written gratings into its infrared laser diodes that narrow the emission spectra and reduce temperature sensitivity. This will lead to cheaper diode-pumped laser systems, and make the devices more attractive for medical imaging and Raman spectroscopy, says Paul Rudy.
Photonic integration was one of the hot new ideas that emerged during the telecoms boom, but it was subsequently shelved by cash-strapped component vendors. Now, as Roy Rubenstein reports, the technology could be set to make a big revival.
GaN HFET reliability can be improved by adding field plates to the structures. This is believed to reduce carrier trapping at the surface, but simulations by Ric Borges, Nelson Braga, Bo Wu and Vidas Mickevicius of Synopsys show that it also decreases the electron temperature and bulk trapping throughout the device.
Based in Woburn, MA, Skyworks Solutions plans a dramatic increase in its share of the power-amplifier market and is targeting both high-end and ultra-low-cost applications. Michael Hatcher asks Kevin Barber how the company will be able to meet the manufacturing demands.
The value of nearly all publicly-owned compound semiconductor companies across the globe has raced upwards over the past year. But, asks Michael Hatcher, which stock outperformed the rest with a seven-fold increase in just 12 months?
Atomic force microscopy is the standard technique for determining semiconductor surface roughnesses. But there is an easier-to-use alternative, white-light interferometry, which can deliver the same height resolution while imaging larger areas at far faster rates, argues IQE's Roy Blunt.
Nichia has developed ultraviolet, blue and aquamarine high-power laser diodes that offer compact replacements for mercury lamps and argon-ion lasers and have the same structure as its 405 nm emitters. Richard Stevenson reports.
Arrays of filter-free AlGaN-on-sapphire detectors that are unaffected by sunlight and deliver high sensitivity, high operability and excellent uniformity could be used in all sorts of commercial and military applications, say Marion Reine, Philip Lamarre and Allen Hairston from BAE Systems.
The availability of 2 inch aluminum nitride substrates and the development of an LED that is based on doped epilayers of the same material marks the dawn of a new era in III-N technology, writes Michael Hatcher.
The merger between telecom system giants Lucent Technologies and Alcatel will affect the supply chain all the way down to the III-V component level and play into the hands of broad-based suppliers, as Michael Hatcher reports.
Infineon's new second-generation SiC diodes combine the established advantages of the Schottky structure with the better high-voltage characteristics and surge-current handling of a p-n junction. The result is a more rugged product that is better suited to medium- and high-power applications, say Kerstin Hubel and Markus Hallenberger.
LED performance could be improved by switching production to GaN substrates, which reduces dislocation densities. However, a better solution is to combine HVPE and MOVPE into a single process, says researcher Glenn Solomon.
nLight is aggressively targeting medical applications, displays, eye-safe communication and atmospheric sensing by extending the wavelength range of its high-power diode bars. Richard Stevenson reports on 660 nm and 1.9 µm emitters that feature record output powers.
Dealing with a legacy of material quality problems, management issues and a plunge in market share doesn't sound like most people's idea of fun, but that didn't stop Phil Yin taking over the reins at substrate supplier AXT