MOCVD reactors equipped with three-layer nozzles and operating at atmospheric pressure can produce growth rates and doping ranges that manufacturers of GaN power electronics and ultraviolet LEDs are looking for.
With two hefty space contracts already in hand, this year is shaping up nicely for Emcore. Compound Semiconductor probes the III-V systems manufacturer on NASA, its elusive next generation inverted metamorphic solar cell and more.
To form the best films, users of electron beam evaporators must understand how uniformity is influenced by the number of axes for substrate rotation, the insertion of shadow masks and the distance between source and substrate.
Conventional green LEDs are plagued by strong internal electric fields, which impair recombination and make it difficult to address droop. The solution is switch to growth on the cubic phase of GaN, which is free from internal fields and has a smaller bandgap, making it easier to reach longer wavelengths.
Building a GaN VCSEL is far harder than making one from GaAs, but progress is being made through the introduction of different types of mirrors, alternative current injection schemes and new crystal orientations.
To maintain the improvements in efficiency that traditionally result from shrinking transistor dimensions, foundries will soon have to replace silicon channels with those based on higher mobility semiconductors. This move, a monumental upheaval for the silicon industry, could be easiest to implement by turning to engineered wafers with separate layers for the p-type and n-type transistors, argues Lukas Czornomaz from the Advanced Functional Materials Group at IBM Zurich.
As Professor Jay Baliga, North Carolina State University, steps up to lead the $140 million 'Next Generation Power Electronics National Manufacturing Innovation Institute', Compound Semiconductor asks about his past, plans and relentless pursuit of the power semiconductor.