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Wednesday 7th May 2014
Do the latest quarterly results from Veeco and Aixtron point to market recovery, asks Compound Semiconductor
Wednesday 7th May 2014
In the RF and power electronic sectors, a silicon foundation is a great way to increase the competitiveness of GaN devices
Thursday 1st May 2014
As Cree builds business for the long-term, shares fall as investors lose faith. What next for the LED lighting heavyweight, asks Compound Semiconductor.
Wednesday 30th April 2014
The etched facet laser is an attractive candidate for silicon photonics, thanks to its small dimensions, freedom from hermetic sealing and its compatibility with passive alignment to waveguides.
Thursday 24th April 2014
With GaN-on-silicon technology entering mass production, industry power players are poised for action. Compound Semiconductor finds out M/A-COM's plans.
Wednesday 23rd April 2014
Fast growth of high-quality SiC epilayers has paved the way to the fabrication of power devices with blocking voltages exceeding 20 kV.
Tuesday 22nd April 2014
Growth on patterned sapphire can lead to large, low-cost semi-polar substratesBy Keisuke Yamane from Yamaguchi University, Japan
Thursday 10th April 2014
Manufacturers of high voltage GaN-on-silicon transistors have yet to deliver, but GaN Systems promises a raft of products this year. Compound Semiconductor reports.
Thursday 10th April 2014
MOCVD reactors equipped with three-layer nozzles and operating at atmospheric pressure can produce growth rates and doping ranges that manufacturers of GaN power electronics and ultraviolet LEDs are looking for.
Wednesday 2nd April 2014
With two hefty space contracts already in hand, this year is shaping up nicely for Emcore. Compound Semiconductor probes the III-V systems manufacturer on NASA, its elusive next generation inverted metamorphic solar cell and more.
Monday 24th March 2014
To form the best films, users of electron beam evaporators must understand how uniformity is influenced by the number of axes for substrate rotation, the insertion of shadow masks and the distance between source and substrate.
Thursday 20th March 2014
Following strong MOCVD reactor sales, analysts across the board predict LED manufacturers in China will rapidly ramp up production. Compound Semiconductor investigates.
Wednesday 12th March 2014
From radar to jammers, the defence industry has spent more than a decade developing GaN for US military applications. Compound Semiconductor asks Raytheon, where next for the technology?
Monday 10th March 2014
Conventional green LEDs are plagued by strong internal electric fields, which impair recombination and make it difficult to address droop. The solution is switch to growth on the cubic phase of GaN, which is free from internal fields and has a smaller bandgap, making it easier to reach longer wavelengths.
Wednesday 5th March 2014
Switching from conventional patterning of sapphire to a nano-scale variant trims epitaxial growth times and materials costs while boosting extraction efficiency.
Wednesday 5th March 2014
Could imec's CMOS car radar chip prompt industry to move to pure silicon, asks Compound Semiconductor.
Monday 3rd March 2014
Building a GaN VCSEL is far harder than making one from GaAs, but progress is being made through the introduction of different types of mirrors, alternative current injection schemes and new crystal orientations.
Wednesday 26th February 2014
RF chip rivals, RFMD and TriQuint, have combined to create a multi-billion dollar industry giant. What does the merger mean for the rest of the industry? Compound Semiconductor investigates.
Monday 24th February 2014
Monolithic integration of LEDs and transistors is helping to usher in a new era for solid-state luminaires, where the emitter and its control electronics are united on single chip.
Wednesday 19th February 2014
Peregrine Semiconductor's CMOS power amplifier promises GaAs-level performance in 4G phones. Will handset manufacturers now shift to silicon, asks Compound Semiconductor.
Wednesday 12th February 2014
Kyma has teamed up with Ammono and Avogy to drive novel bulk GaN growth forward. Compound Semiconductor finds out more.
Tuesday 11th February 2014
To maintain the improvements in efficiency that traditionally result from shrinking transistor dimensions, foundries will soon have to replace silicon channels with those based on higher mobility semiconductors. This move, a monumental upheaval for the silicon industry, could be easiest to implement by turning to engineered wafers with separate layers for the p-type and n-type transistors, argues Lukas Czornomaz from the Advanced Functional Materials Group at IBM Zurich.
Thursday 6th February 2014
As Professor Jay Baliga, North Carolina State University, steps up to lead the $140 million 'Next Generation Power Electronics National Manufacturing Innovation Institute', Compound Semiconductor asks about his past, plans and relentless pursuit of the power semiconductor.
Wednesday 29th January 2014
As investors applaud Cree's latest financial results, LED lighting market conditions look set to promote more of the same, reports Compound Semiconductor.

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