< Page >

Features


Wednesday 30th March 2011
Novel growth techniques are helping to spur the output of deep ultra-violet LEDs to levels that are suitable for purifying water at more than a liter per minute, says Tim Bettles from Sensors Electronic Technology.
Wednesday 2nd March 2011
Adding a tiny probe to an IR microscope improves its temperature measurement capability, in turn giving new insights into the local heating profile of HEMTs and LEDs, according to a UK team comprising Chris Oxley, Richard Hopper, Dominic Prime, Mark Leaper and Gwynne Evans from De Montfort University and Andrew Levick from the National Physical Laboratory.
Tuesday 22nd February 2011
Novel chip geometries, such as triangular and hexagonal devices, can deliver massive increases in light extraction by cutting optical confinement in both the vertical and horizontal directions, says Hoi Wai Choi from the Semiconductor Lighting and Display Laboratory at The University of Hong Kong.
Tuesday 22nd February 2011
Silicon extreme ultraviolet detector arrays require non-standard methods to be prevented from receiving longer wavelength radiation, e.g. by using multiple filters. Switching to AlGaN equivalents increases robustness and eliminates the need to block out visible and infrared light, which in turn boosts detector performance, say IMEC’s Pawel Malinowski, Kyriaki Minoglou and Piet De Moor.
Wednesday 16th February 2011
In order to become a successor to silicon CMOS technology, III-V transistors must be built on silicon substrates that are large enough to be processed by VLSI toolsets. Sematech has done just this by fabricating InGaAs MOSFETs on 200 mm silicon (100) using state-of-the-art silicon foundry tools. Richard Stevenson investigates.
Wednesday 16th February 2011
Low-resistance channel contacts that speed transistors to record-breaking frequencies, localized boron doping that boosts blocking voltages and studies of HEMT ageing mechanisms all featured at the latest International Electron Devices Meeting. Richard Stevenson reports.
Info
Tuesday 1st February 2011
There are tremendous differences between the laser and the transistor, but it is possible to draw their attributes together by building a transistor laser. This novel device that produces its electrical and optical outputs simultaneously promises to revolutionize data transfer, enabling new architectures capable of operating at incredibly high bit rates, says Milton Feng from the University of Illinois, Urbana-Champaign.
Tuesday 1st February 2011
Quantum dot infrared photodetectors suffer from strain in their nanostructures that culminates in various performance-degrading defects. However, many of these defects can be avoided by turning to a novel, strain-free growth method based on the deposition of droplets, says Jiang Wu from University of Arkansas Fayetteville.
Monday 31st January 2011
Substantial reductions in chip production costs will spur the uptake of LED-based solidstate lighting. One way to do this is to start to manufacture these emitters with multi-wafer 6-inch tools that set a new benchmark for reproducibility, argues Aixtron’s Rainer Beccard.
Monday 31st January 2011
An ensemble of spatially distributed III-nitride quantum dots can produce the broad, visible emission that is desirable for ambient lighting and the growth of crops, says Soh Chew Beng, Chua Soo Jin and Liu Wei from the Singapore Institute of Materials Research and Engineering.
Thursday 20th January 2011
Inserting an insulating silicon oxide layer between the GaAs layer and electrodes, eliminates spikes in the electric field, which are typically encountered with these devices.
Thursday 20th January 2011
If you want to grow n-doped GaN layers on silicon with minimal tensile strain, then consider using germanium, rather than silicon as the n-type dopant.
Info
Tuesday 18th January 2011
Temperature, electric-field-induced stress, surface potential distribution, and defect generation maps reveal potential device problems and even predict where and when device failure will occur.
Tuesday 18th January 2011
The researchers say that this should be possible by using GaAs NWs of different length as the basis for growing InAs nanowires (NWs).
Tuesday 18th January 2011
The fast moving HB LED sector is starting discussions to consider the kinds of consistent materials characterization, testing protocols, tool interoperability, or other common practices that typically enable a mature high volume industry, reports Paula Doe from SEMI.
Tuesday 18th January 2011
Due to a very small depth of focus, standard photolithography techniques have insufficient fidelity for defining photonic crystal structures on LED epiwafers. But highquality, large-scale patterning is possible by turning to a novel self-imaging photolithography technique, say Harun Solak, Christian Dais and Francis Clube from Eulitha.
Tuesday 18th January 2011
POLISH GaN substrate manufacturer Ammono has unveiled characteristics of its semi-polar (2021) substrates. This cut of GaN is a promising candidate for the production of green lasers. Last summer, engineers at Sumitomo produced a 531 nm edge-emitter by exploiting the relatively high indium incorporation in InGaN quantum wells grown on this plane, plus the built-in electric fields that push emission to longer wavelengths.
Tuesday 18th January 2011
A GERMAN team claims to have broken the record for data transmission from an oxideconfined 980 nm VCSEL operating at 85 °C. Their device, which is capable of 25 Gbit/s operation at that elevated temperature, is an ideal source for very short optical links in high performance computers, according to the researchers from the Technical University of Berlin and VI Systems.
Info
Tuesday 18th January 2011
CURVE fitting with the standard equation for carrier recombination in an LED shows that Auger recombination cannot, by itself, account for droop, the decline in device efficiency at high drive currents. That’s the claim of a partnership between Rensselaer Polytechnic Institute (RPI), Sandia National Laboratories and Samsung LED.
Thursday 13th January 2011
The use of LEDs is already widespread in consumer electronics, appliances, and other products. Single LEDs are seemingly ubiquitous; LED assemblies are widely used in mobile electronics, computer displays, and televisions. We can expect that LEDs will spread through industrial lighting and into the general lighting of our homes. By Ryan Clement and Robin Gardiner, at MATHESON.
Wednesday 12th January 2011
Physical vapor transport can produce high-quality 2-inch AlN crystals with low dislocation densities. Substrates sliced from these crystals provide an ideal platform for the growth of ultraviolet LEDs, lasers and RF devices, says a team from Nitride Crystals.
Wednesday 12th January 2011
RESEARCHERS at the Naval Research Laboratory in Washington DC claim to have produced the first InAlAsSb/InGaSb DHBTs with an InAsSb emitter and sub collector.
Monday 10th January 2011
Scientists from Hong Kong have built a GaN power tunnel FET that simultaneously delivers normally-off operation and low off-state leakage current.
Wednesday 29th December 2010
Researchers have found that GaN Gate-Injection Transistors (GITs) could remarkably reduce the energy consumption in power conversion systems, since they have inherently low on-state resistance and low switching losses.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
Live Event