Throughput, yield and the deposition of expensive metal-organic precursors dominate the cost of ownership of MOCVD reactors, according to research at Aixtron. Rainer Beccard explains how these three factors have driven the design of the companyâ€™s latest planetary reactor.
Dilute-nitride lasers promise significant cost advantages over their indium phosphide counterparts, but despite this, their future now hangs in the balance following the recent sale of Infineon Technologies' optical-transceiver business to Finisar. Richard Stevenson investigates.
BinOptics' etched-facet technology avoids the drawbacks of the standard cleaving process used in laser production, such as poor yields, while allowing on-wafer testing. Alan Morrow and Alex Behfar describe how the technique can benefit GaN laser manufacturing and speed up the market penetration of next-generation DVD players.
Advances in television broadcasting, such as interactive services and the delivery of high-definition content, are generating demand for higher bandwidth cable-television networks. This evolution of the medium is driving an increase in shipments of gallium arsenide components, according to two leading RF chip manufacturers. Richard Stevenson investigates.
With Nichia settling a number of recent disputes concerning unauthorized suppliers and Cree issuing licenses under its own white-LED patents, it might appear that the nitride LED intellectual property "wall" is indeed crumbling. But not everybody agrees, as Michael Hatcher discovers.
Using a phosphor to convert blue emission from an LED chip into white light fundamentally limits the efficiency of solid-state lighting. Now, a research team in the US is looking to remove the need for phosphors by using fluorescent, doped-zinc-oxide substrates instead, as Jeff Nause explains.
Sales of hybrid electric vehicles are climbing but, unless the prices of such cars fall, stagnation could follow. The solution, says Will Draper, is to use silicon carbide chips to reduce the size of the power electronics and increase operating temperature.
The sheer hardness of silicon carbide means that dicing wafers that are based on the material gives device manufacturers a big headache. Now, a novel laser technique - that uses a water jet to cool the material between pulses of the laser - developed by Swiss company Synova may offer a solution, as Infineon Technologies engineers have discovered.
The challenge for today's RFIC makers is to produce front-end modules for cell-phone handsets that can deliver increased talk time in a small footprint. According to Agilent Technologies, this can be achieved by integrating E-PHEMT transistors and sophisticated switching. Richard Stevenson reports.
Demand for smaller, cheaper and yet more complex RF modules from cell-phone handset manufacturers is driving increased GaAs component integration and the development of disruptive RFIC technologies. Walter Wohlmuth details TriQuint's E-/D-mode PHEMT process, developed in response to that demand.
Maximizing yield, increasing throughput and reducing scrap is becoming increasingly critical for GaAs device manufacturers as customers demand cheaper products. David Lishan from Unaxis, Mike Fresina of RF Micro Devices and their colleagues describe how a large PECVD module has more than proved its worth in a high-volume production environment.
The overall level of funding that DARPA is putting into GaN microelectronics under its wide-bandgap semiconductors program may have disappointed some, but the agency is certainly fast-tracking the technology. Michael Hatcher takes a look at the three teams on the wide-bandgap roster.
Demand for InP-based devices may just be crawling out of an extended slump, but its main raw material, indium, is highly sought after - it is currently trading at its highest price for the last 60 years. Thomas Jansseune looks at the market forces that could be problematic for InP manufacturers.
Challenging the view that electrochemical measurements are awkward to perform and are imprecise is a new profiler that delivers a five-fold improvement in precision. Gyles Webster details progress in electrochemical capacitance-voltage profiling.
Optical surface analyzers offer a fast method of examining transparent substrate surfaces and classifying defect types. Laurie Bechtler describes the technique and the insights it has provided to researchers making GaN HEMTs at Hitachi Cable.
Reduced screw dislocation density and faster deposition than conventional MOCVD are just two of the benefits of so-called migration-enhanced MOCVD. The technique shows impressive results when it comes to AlGaN device fabrication, producing relatively efficient deep-ultraviolet LEDs and improved transistor performance, reports Sensor Electronic Technology's Remis Gaska.
Complex US military projects, such as the development of unmanned air-combat systems, demand an investment in high-technology equipment and a likely role for a range of III-V devices. Yvonne Carts-Powell describes some recent progress that has been made with GaN transistors.
The renowned BT Photonics Technology Research Centre in the UK is now occupied by R&D outfit The Centre for Integrated Photonics. Richard Stevenson finds out what the start-up plans to do with its intellectual-property and wafer-processing-equipment inheritance from BT and Corning.
Peter Wellmann, from the University of Erlangen, Germany, describes a new approach to silicon carbide substrate growth that could improve LED and Schottky-diode performance, as well as pave the way for new devices, such as insulated-gate bipolar transistors for power applications.