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Features


Tuesday 9th August 2005
Throughput, yield and the deposition of expensive metal-organic precursors dominate the cost of ownership of MOCVD reactors, according to research at Aixtron. Rainer Beccard explains how these three factors have driven the design of the company’s latest planetary reactor.
Tuesday 12th July 2005
Dilute-nitride lasers promise significant cost advantages over their indium phosphide counterparts, but despite this, their future now hangs in the balance following the recent sale of Infineon Technologies' optical-transceiver business to Finisar. Richard Stevenson investigates.
Tuesday 12th July 2005
BinOptics' etched-facet technology avoids the drawbacks of the standard cleaving process used in laser production, such as poor yields, while allowing on-wafer testing. Alan Morrow and Alex Behfar describe how the technique can benefit GaN laser manufacturing and speed up the market penetration of next-generation DVD players.
Tuesday 12th July 2005
Advances in television broadcasting, such as interactive services and the delivery of high-definition content, are generating demand for higher bandwidth cable-television networks. This evolution of the medium is driving an increase in shipments of gallium arsenide components, according to two leading RF chip manufacturers. Richard Stevenson investigates.
Tuesday 12th July 2005
With Nichia settling a number of recent disputes concerning unauthorized suppliers and Cree issuing licenses under its own white-LED patents, it might appear that the nitride LED intellectual property "wall" is indeed crumbling. But not everybody agrees, as Michael Hatcher discovers.
Tuesday 12th July 2005
Using a phosphor to convert blue emission from an LED chip into white light fundamentally limits the efficiency of solid-state lighting. Now, a research team in the US is looking to remove the need for phosphors by using fluorescent, doped-zinc-oxide substrates instead, as Jeff Nause explains.
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Thursday 9th June 2005
High-power diode-laser manufacturers are now implementing new processes developed under various research programs in volume device production, as Michael Hatcher discovers.
Thursday 9th June 2005
Sales of hybrid electric vehicles are climbing but, unless the prices of such cars fall, stagnation could follow. The solution, says Will Draper, is to use silicon carbide chips to reduce the size of the power electronics and increase operating temperature.
Thursday 9th June 2005
One of the ways to cut chip costs is to transfer manufacturing to larger substrates. Is the LED-manufacturing industry in Taiwan ready for such a change? Richard Stevenson investigates.
Thursday 9th June 2005
The sheer hardness of silicon carbide means that dicing wafers that are based on the material gives device manufacturers a big headache. Now, a novel laser technique - that uses a water jet to cool the material between pulses of the laser - developed by Swiss company Synova may offer a solution, as Infineon Technologies engineers have discovered.
Tuesday 10th May 2005
Tuesday 10th May 2005
The challenge for today's RFIC makers is to produce front-end modules for cell-phone handsets that can deliver increased talk time in a small footprint. According to Agilent Technologies, this can be achieved by integrating E-PHEMT transistors and sophisticated switching. Richard Stevenson reports.
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Tuesday 10th May 2005
Demand for smaller, cheaper and yet more complex RF modules from cell-phone handset manufacturers is driving increased GaAs component integration and the development of disruptive RFIC technologies. Walter Wohlmuth details TriQuint's E-/D-mode PHEMT process, developed in response to that demand.
Tuesday 10th May 2005
Maximizing yield, increasing throughput and reducing scrap is becoming increasingly critical for GaAs device manufacturers as customers demand cheaper products. David Lishan from Unaxis, Mike Fresina of RF Micro Devices and their colleagues describe how a large PECVD module has more than proved its worth in a high-volume production environment.
Tuesday 10th May 2005
The overall level of funding that DARPA is putting into GaN microelectronics under its wide-bandgap semiconductors program may have disappointed some, but the agency is certainly fast-tracking the technology. Michael Hatcher takes a look at the three teams on the wide-bandgap roster.
Tuesday 10th May 2005
Demand for InP-based devices may just be crawling out of an extended slump, but its main raw material, indium, is highly sought after - it is currently trading at its highest price for the last 60 years. Thomas Jansseune looks at the market forces that could be problematic for InP manufacturers.
Tuesday 5th April 2005
Challenging the view that electrochemical measurements are awkward to perform and are imprecise is a new profiler that delivers a five-fold improvement in precision. Gyles Webster details progress in electrochemical capacitance-voltage profiling.
Tuesday 5th April 2005
Optical surface analyzers offer a fast method of examining transparent substrate surfaces and classifying defect types. Laurie Bechtler describes the technique and the insights it has provided to researchers making GaN HEMTs at Hitachi Cable.
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Tuesday 5th April 2005
Reduced screw dislocation density and faster deposition than conventional MOCVD are just two of the benefits of so-called migration-enhanced MOCVD. The technique shows impressive results when it comes to AlGaN device fabrication, producing relatively efficient deep-ultraviolet LEDs and improved transistor performance, reports Sensor Electronic Technology's Remis Gaska.
Tuesday 5th April 2005
With no domestic oil supply, the Korean government is very keen on LED technology and is pouring hundreds of millions of dollars into "LED Valley". Richard Stevenson reports.
Tuesday 5th April 2005
Tempting the car-buying public and meeting new regulations will drive an increase in LED implementation in cars, particularly for external use, says Eric Mounier of Yole Développement.
Tuesday 8th March 2005
Complex US military projects, such as the development of unmanned air-combat systems, demand an investment in high-technology equipment and a likely role for a range of III-V devices. Yvonne Carts-Powell describes some recent progress that has been made with GaN transistors.
Tuesday 8th March 2005
The renowned BT Photonics Technology Research Centre in the UK is now occupied by R&D outfit The Centre for Integrated Photonics. Richard Stevenson finds out what the start-up plans to do with its intellectual-property and wafer-processing-equipment inheritance from BT and Corning.
Tuesday 8th March 2005
Peter Wellmann, from the University of Erlangen, Germany, describes a new approach to silicon carbide substrate growth that could improve LED and Schottky-diode performance, as well as pave the way for new devices, such as insulated-gate bipolar transistors for power applications.
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