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Monday 27th November 2006
Markus Ortsiefer from Vertilas explains why long-wavelength tunable VCSELs are a better option for gas sensing than the lead salt, quantum cascade and diode-pumped solid-state lasers that are used today.
Monday 27th November 2006
The hybrid III-V/silicon laser manufactured by Intel and its collaborators may not represent true silicon photonics, but it is a significant development in optical interconnects for chip and board communications, discovers Michael Hatcher.
Monday 27th November 2006
Competition among SiC substrate manufacturers has boosted wafer diameters and eliminated micropipe defects in commercial SiC wafers. However, there is still some division over the effectiveness of the standards used to define the quality of the material, as Richard Stevenson discovers.
Monday 27th November 2006
Commercial applications and market penetration of devices dominated the recent ECSCRM conference in Gateshead, UK, which was held on the centenary of the first SiC paper. Alton Horsfall reports.
Monday 27th November 2006
A Californian start-up claims that its ultrapure steam generator can boost the production yield and speed the oxide aperture process used widely in VCSEL manufacturing. Richard Stevenson talks to the tool's inventor, Jeff Spiegelman.
Friday 27th October 2006
The global move towards greater energy-efficiency is one that Cree can tap into from many angles as it looks beyond its traditional territory of blue LEDs. Bob Metzger visited the company's new North Carolina fab to learn more about its latest strategy for growth.
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Friday 27th October 2006
Rob Hershey from the Texan company Molecular Imprints explains how a simple and low-cost whole-wafer imprinting technique can increase the extraction efficiency of LED chips.
Friday 27th October 2006
Jon Cartwright talks to three US chip makers who are battling it out to provide the best light source for large screen rear-projection televisions.
Friday 27th October 2006
TopGaN's pressure-grown GaN platelet and needle crystals have record-breaking low defect densities, but are limited in size. However, they can be extended by a high growth rate hydride vapor phase epitaxy process that does not compromise on quality, says the company's vice-president Izabella Grzegory.
Friday 27th October 2006
A US consortium is aiming to smash the solar-cell efficiency record with a radical design that uses a lateral architecture and a dispersive concentrator. If they are successful, soldiers will be freed from a 20 lb load of spare batteries. Richard Stevenson reports.
Friday 27th October 2006
Monday 25th September 2006
Still making the bulk of its revenue from sales of LED chips for cell-phone applications, Cree's finances are taking a hit as the company looks to move into a new growth phase.
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Monday 25th September 2006
With the electronic materials division formerly belonging to Emcore now under its wing, IQE is the world's biggest independent supplier of III-V epiwafers to the compound semiconductor industry. Michael Hatcher asks Drew Nelson, the CEO at IQE, about the company's latest move.
Monday 25th September 2006
Poor current handling and thermal management are suppressing the performance of LEDs for solid-state lighting applications. These problems can be avoided, however, by switching to a low-cost vertical design and a metal alloy substrate, says Trung Doan from SemiLEDs Corporation.
Monday 25th September 2006
Forget about men in white coats. Soon police officers could be using LEDs to analyze and identify DNA evidence at the crime scene, discovers Jon Cartwright.
Monday 25th September 2006
Skyworks believes that its hybrid design for BiFETs, which includes a quicker and lower-cost processing route, outweighs the greater versatility of a monolithic design. Richard Stevenson investigates.
Monday 25th September 2006
The lack of forward voltage stability in SiC bipolar devices is hampering their deployment in electrical power transformers. However, this problem can be overcome with an etching and regrowth process, say Joe Sumakeris, Brett Hull and Dave Grider from US chip manufacturer Cree.
Monday 25th September 2006
GaN HEMT manufacturers and ultraviolet LED developers are using large crack-free AlN-based templates thanks to a new deposition process, say TDI's Vladimir Dmitriev and Alexander Usikov.
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Tuesday 22nd August 2006
An equity deal and exclusive supply relationship between UV-LED innovator Sensor Electronic Technology and Korea's leading LED packager will spark a host of new applications by reducing the cost of the devices, writes Michael Hatcher.
Tuesday 22nd August 2006
Despite distinctly Star Trek undertones, photonic power conversion is a very real technology. More than 10,000 systems are already deployed and a number of promising new applications are in the pipeline, hears Michael Hatcher.
Tuesday 22nd August 2006
Start-up company MOXtronics has recently produced the first colored ZnO-based LEDs. Although the efficiency of these LEDs is not high, improvements are rapid and the emitters have the potential to outperform their GaN rivals, say Henry White and Yungryel Ryu from MOXtronics.
Tuesday 22nd August 2006
Aixtron claims that its latest GaN reactor can produce a higher LED chip yield through increased wafer capacity, improved temperature uniformity and greater ease of use. Richard Stevenson investigates.
Tuesday 22nd August 2006
Robert Metzger explains why growing III-N material on a different crystal plane to form a non-polar structure should boost the output power of LEDs and improve the doping control in HEMTs.
Tuesday 22nd August 2006
Practical, commercial silicon lasers are at least a decade away from reality, but other silicon optics could still impact the III-V optoelectronics industry, according to Yvonne Carts-Powell.
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