< Page >

Features


Wednesday 19th September 2007
Perpendicular cleaving planes and an absence of polarization fields mark out thick layers of little-known free-standing cubic GaN as the ideal platform for optoelectronic devices, say Nottingham University's Sergei Novikov, Anthony Kent, Richard Campion and Tom Foxon.
Wednesday 19th September 2007
If you develop the right process, a switch from a platinum to a palladium barrier can cut your PHEMT production costs without compromising leakage currents, says Skyworks' Kezia Cheng.
Wednesday 19th September 2007
Aixtron is helping to accelerate the commercialization of free-standing GaN through the launch of a vertical HVPE tool that features a hanging seed holder and is capable of producing 2 inch diameter boules, says Bernd Schineller.
Wednesday 19th September 2007
New geometries and field plates have extended the operating voltage, power output and efficiency of GaAs PHEMTs to a level where they can compete with SiC and GaN-on-silicon devices, claim David Fanning, Edward Beam, Paul Saunier and Hua-Quen Tserng from TriQuint Semiconductor.
Thursday 2nd August 2007
When a major global corporate swallows up a specialist company, things don't always go according to plan. But Epichem co-founder Barry Leese tells Michael Hatcher that joining forces with the chemicals giant Sigma-Aldrich has enabled the UK metalorganics supplier access to the fast-growing market for advanced silicon devices.
Thursday 2nd August 2007
Miniature atomic clocks offer a small but valuable market for VCSEL manufacturers that are able to build single-mode lasers with a low threshold current and very precise emission wavelengths, according to Darwin Serkland from Sandia National Labs and Robert Lutwak from Symmetricom.
Info
Thursday 2nd August 2007
At one corner of the Alcatel-Lucent campus on the outskirts of Paris, change is in the air. Surrounded by farmers tending their crops, 3S Photonics is determined to dominate the resurgent market for submarine optical communication components. Andy Extance reports from rustic Nozay.
Thursday 2nd August 2007
Dislocations are the root cause of infant HBT failure, says Agilent, and reducing their density is the only way to achieve higher levels of integration with excellent reliability. Richard Stevenson investigates.
Thursday 2nd August 2007
Currently producing 2 inch GaN substrates from a native seed, Kyma Technologies' crystal process will be scaled up to 4 inches by the end of the decade, report Keith Gurnett and Tom Adams.
Thursday 12th July 2007
Cree founder and former CEO Neal Hunter left the chip company two years ago and headed up the supply chain with the launch of LED Lighting Fixtures. Richard Stevenson hears his vision for a market dominated by LED-based lighting.
Thursday 12th July 2007
The battery has been a great servant for powering devices in situations where mains electricity is inappropriate, but it has its downsides, which include a relatively short life and a toxic composition. ZnO nanowire power generators are free from these weaknesses, and have the potential to drive small devices such as implanted biosensors, says Zhong Lin Wang from Georgia Institute of Technology.
Thursday 12th July 2007
With the GaAs industry finally back in some kind of healthy balance, the mood at CS Mantech was as warm as the Texan sunshine. Michael Hatcher and Andy Extance soaked up the atmosphere.
Info
Thursday 12th July 2007
If we stick to using copper interconnects in silicon ICs, then it's only a matter of time before we arrive at a performance-limiting data-transfer bottleneck. The solution: additional optical interconnects built from silicon waveguides and InP lasers and detectors, says Dries Van Thourhout.
Thursday 12th July 2007
LEDs, lasers and multi-junction solar cells can all employ tunnel junctions to improve performance. Calculating the effects of this junction is tricky, but there are ways to accurately simulate chip characteristics and cost-effectively optimize the structure's design, say Z Q (Leo) Li and Simon Li.
Thursday 7th June 2007
In a bad year for compound semiconductor chip stocks in general, more than half of our portfolio of prominent companies have shed an alarming third of their value. But, reports Michael Hatcher, it wasn't all doom and gloom &ndash and, for a change, the star performer this year was an epitaxial equipment vendor, Germany's Aixtron.
Thursday 7th June 2007
LED manufacturers are running massive marketing campaigns to woo the illumination market with brighter, lower-cost chips. But this will be in vain if their customers continue to design inefficient fixtures, reports Richard Stevenson.
Thursday 7th June 2007
Semprius is refining and scaling a versatile printing process for uniting III-Vs with silicon. The technique will cut the cost of photovoltaics and RF and broadband sources, say Kyle Benkendorfer, Etienne Menard and Joseph Carr.
Thursday 7th June 2007
Non-polar light-emitting devices based on GaN have huge potential, but chip performance has been limited. However, this is starting to change, say Steve DenBaars, Shuji Nakamura and Jim Speck, who have made non-polar LEDs with an efficiency of up to 45% and some of the first non-polar lasers.
Info
Thursday 7th June 2007
With no immediate bulk GaN on the commercial horizon, engineers have started to look beyond silicon and SiC to composite materials and metals as a platform for nitride growth. Richard Stevenson investigates.
Thursday 7th June 2007
Innovations emerging from the super-high-efficiency diode sources program haven't just boosted the efficiency of hero devices, says Alfalight's Rob Williamson, they have also had the knock-on effect of driving up the performance of commercial products across the board.
Thursday 3rd May 2007
CIR's latest analysis of the future market for optical components predicts that sales of tunable lasers will grow rapidly to reach almost $1 billion by 2012. Michael Hatcher reports.
Thursday 3rd May 2007
Under pressure to get WiMAX products to market, it may be tempting to overlook the power amplifier, but designers who do so risk degrading system links and reducing battery life, say Glenn Eswein and Ray Waugh from Anadigics.
Thursday 3rd May 2007
Despite the recent application of high-k dielectrics and metal gates in volume CMOS processes, and the scattergun approach to logic devices based on III–V materials, the compound and silicon industries have much in common. Bob Metzger looks at post-CMOS convergence.
Thursday 3rd May 2007
For decades, infrared detector development has drawn on many different types of compound semiconductor material. Philippe Tribolet explains why Sofradir has selected HgCdTe for its future plans. These include building a new $12 million fab to cut chip manufacturing costs, which should ultimately lower detector prices and drive up sales of these high-specification imagers.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
Live Event