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Features


Friday 5th July 2013
As the concentrated photovoltaic industry looks east for market success, silicon-based businesses with more established supply chains could have a head-start, reports Compound Semiconductor.
Thursday 4th July 2013
Electron emission spectroscopy offers new insights into the cause of droopJ. Iveland et. al. Phys. Rev. Lett. 110 177406 (2013)
Wednesday 3rd July 2013
It is essential that tomorrow’s optical networks are built with far more efficient components to prevent the continual ramp in internet traffic from significantly increasing global energy consumption. One promising device that will help in this endeavour is a 1310 nm VCSEL formed by fusing together active regions grown on InP wafers and mirrors formed on GaAs substrates, says Alexei Sirbu from Ecole Polytechnique Fédérale de Lausanne (EPFL) and Eli Kapon from EPFL and BeamExpress.
Monday 1st July 2013
In an industry first, the Office of the Secretary of Defense has rated Raytheon's GaN process as ready for defence production. Compound Semiconductor finds out more.
Monday 24th June 2013
Packaging has its downsides: It increases the footprint and the price of a power MOSFET, while degrading its performance through unwanted increases in resistance and inductance. The best solution is to ditch the package, a step that allows GaN HEMTs to be cost-competitive with silicon incumbents, argues Alex Lidow from Efficient Power Conversion Corporation.
Friday 21st June 2013
Talk of silicon completely displacing GaAs in the RF front-end of cellular phones is premature and dead wrong, argues TriQuint’s Phil Warder. In his view, the future will instead involve smart RF suppliers collaborating closely with OEMs and chipset partners to offer complete RF solutions that exploit the best technologies for each application.
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Friday 21st June 2013
Will a new buffer material for gallium nitride tempt LED manufacturers away from sapphire and onto silicon? Compound Semiconductor investigates.
Friday 14th June 2013
As Nujira unveils its highest performing envelope tracking chip for mobile handsets yet, vice president Jeremy Hendy asserts the technology is ready for GaAs and CMOS power amplifiers. Compound Semiconductor reports.
Tuesday 11th June 2013
With continued growth projected for SiC markets, up and coming Japan-based manufacturers prepare to steal the show, reports Compound Semiconductor.
Tuesday 4th June 2013
Tiny tunnels enable the growth of single-crystalline GaN on amorphous substrates
Tuesday 28th May 2013
Like many companies around the world, RF Micro Devices and Transphorm are moving from the development of GaN FETs to their production. How far have these firms got? Richard Stevenson investigates.
Friday 24th May 2013
Just when you thought Amonix was scaling down operations, the CPV system manufacturer comes back with a re-vamped manufacturing strategy and a cheaper module. Compound Semiconductor talks to founder, Vahan Garboushian, about the company's future.
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Monday 20th May 2013
A misconception is holding back the development and deployment of GaN devices that are built on silicon substrates. This platform is widely blamed for compromising blocking voltages, but it doesn’t: It is possible to make diodes and HEMTs on silicon that have breakdown voltages of well over 2 kV, according to Timothy Boles and Douglas Carlson from M/A-COM Technology Solutions, Tomas Palacios from MIT and Mike Soboroff from the US Department of Energy.
Friday 17th May 2013
Will CrystAL-N's two inch aluminium nitride substrates trigger UV LED market growth, asks Compound Semiconductor.
Wednesday 15th May 2013
There are many options for improving the performance of III-V solar cells, including inserting quantum wells and dots to extend spectral coverage and adding nanoparticles and diffraction gratings to boost light trapping. Insights into all these approaches are outlined by Sudha Mokkapati, Samuel Turner, Haofeng Lu, Lan Fu, Hark Hoe Tan and Chennupati Jagadish from The Australian National University
Friday 10th May 2013
As concentrated photovoltaic businesses soldier on, research into novel III-V devices is rife. Compound Semiconductor looks at what the future holds for the industry.
Thursday 9th May 2013
To fulfil the tremendous potential of graphene, high-quality material must be shipped in significant volumes. One supplier looking to do just that is Graphensic, which has developed graphene-on SiC products for making structures for metrology, high-speed transistors and biosensors. Company founders Rositza Yakimova, Mikael Syväjärvi, and Tihomir Iakimov detail their progress.
Friday 3rd May 2013
Diversification lies at the heart of Kyma Technologies’ vision for its future. It first made a name for itself as a leading supplier of wide bandgap materials, but it is now expanding its offerings and has starting to provide plasma vapour deposition (PVD) equipment and photoconductive switches, explains the company chief executive officer, Keith Evans.
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Friday 3rd May 2013
In the race to light up Russia's streets and parks, the Optogan-Philips joint venture prepares to shine the brightest, Compound Semiconductor reports.
Monday 29th April 2013
Photonic integrated circuits enable the construction of compact, highly functional components, but operation tends to be restricted to telecom wavelengths. We are now addressing this shortcoming by developing devices that operate further into the infrared, say imec's Dries Van Thourhout and Gunther Roelkens.
Friday 26th April 2013
Why seasoned chief executive, Giorgio Anania, believes the world is ready for 3D LEDs, reports Compound Semiconductor.
Tuesday 23rd April 2013
It’s great for business to adopt a holistic approach to sapphire manufacturing. When a firm begins with the processing of raw materials and ends with wafer polishing, it enables a trimming of manufacturing costs, the application of proprietary processes to many steps used in sapphire substrate production, and improvements to the reliability of product supply, argues Raja Parvez from Rubicon Technology.
Friday 19th April 2013
As Toshiba sends its SiC diodes out to photovoltaic markets, what can we expect next, asks Compound Semiconductor.
Wednesday 17th April 2013
Lasers and LEDs that are grown on semi-polar planes deliver very impressive performance at green wavelengths, but commercial success of these devices is hampered by a lack of affordable, high-quality substrates with appropriate orientations. To address this, a German team is developing various methods to make semi-polar material, and studying its properties in detail. Richard Stevenson reports.
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