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Friday 27th July 2012
Switching from silicon electronics to wide bandgap alternatives promises to deliver improvements in the performance of power supplies, wind turbines, solar systems, hybrid electric vehicles, trams, trains and industrial machinery. Richard Eden from IMS Research, which was recently acquired by IHS, takes a detailed looked at all of these opportunities for wide bandgap devices and identifies the barrier to their mass adoption.
Thursday 19th July 2012
Today’s designers of cutting-edge phones face the same challenge that their predecessors wrestled with: extending the time between battery charging. To succeed now, these designers must build efficient front-end systems offering the high levels of linearity demanded by digital networks operating with complex coding schemes. There are many options for fulfilling these requirements, and they all have their pros and cons, argues Chris Novak, General Manager of 3G/4G Solutions at RFMD.
Friday 13th July 2012
Traditional triple-junction photovoltaics are marred by brittleness, inflexibility and an efficiency that is limited by the germanium cell. To address all of these issues MicroLink has developed a whole-wafer, high-volume epitaxial lift-off technique for producing ultra-thin cells on GaAs. Richard Stevenson reports.
Wednesday 11th July 2012
Swings in market share for the leading GaAs chipmakers, a rise in outsourcing, the introduction of new BiHEMT and HBT processes and bleak prospects for pHEMTs featured at this year’s CS Mantech. Richard Stevenson reports.
Thursday 28th June 2012
Gain a comprehensive overview of the entire compound semiconductor industry at CS International (Inc. CS Europe)
Wednesday 27th June 2012
Low cost carbon nanotube deposition on 300 mm substrates opens up lucrative opportunities in medical, electronics and power industries
Friday 22nd June 2012
Serpentine mask paves the way to ultra-high-quality GaN epilayers
Wednesday 20th June 2012
Unlike etching or laser-lift off, mechanical approaches for separating GaN epitaxial structures from their substrates can be quick, simple and scalable to large areas.
Tuesday 19th June 2012
As LEDs plunge to cryogenic temperatures, droop kicks in at lower drive currents due to diminished utilization of the active region.
Thursday 14th June 2012
Aluminium gallium nitride photodectors have been fabricated by Chinese researchers using a proprietary high temperature MOCVD process and a special surface treatment
Thursday 14th June 2012
During the last 12 months the share prices of all the leading III-V chipmakers have fallen. But why has the value of some companies dropped by just a few percent, while others have plummeted by more than two-thirds? Richard Stevenson investigates.
Tuesday 12th June 2012
Rocketing demands for data transfer are signaling a switch from copper interconnects to those based on optical fiber. But these new links will only receive widespread adoption when they are paired with ultra-high-speed sources, such as our VCSELs that combine record-breaking modulation speeds with high temperature operation, say Werner Hofmann and Dieter Bimberg from TU-Berlin.
Monday 11th June 2012
Silicon foundries could switch production from silicon MOSFETs to those based on III-Vs and germanium by the end of this decade. Making this transition is far from trivial, but progress is being made in gate dielectrics, contact resistance, peak current flow and material quality. Richard Stevenson reports.
Friday 8th June 2012
Transistors built fromGa2O3 have tremendous potential. They have a far higher electric field strength than those made from GaN and SiC, and they can be formed from native substrates produced with simple, low-cost methods, says Masataka Higashiwaki from the National Institute of Information and Communications Technology (NICT), Japan.
Thursday 7th June 2012
Green GaN lasers are very different from their red and infrared III-V cousins: They are strained, plagued by strong internal electric fields and have massive band offsets. But if you can understand these traits and use some of them to your advantage, it is possible to design devices for plugging the green gap, say Dmitry Sizov, Rajaram Bhat and Chung-En Zah from Corning.
Thursday 31st May 2012
Imaging the brain of a mouse with arrays of 470 nm LEDs and silicon pixels.
Wednesday 30th May 2012
Grading quantum barriers cuts LED droop
Monday 28th May 2012
UV LED performance soars with the addition of a little indium incorporation in the active region and optimized metallic contacts.
Thursday 24th May 2012
Thursday 24th May 2012
Researchers have used a simulation of InAs quantum dots to accurately reproduce experimentally measured optical spectra
Monday 21st May 2012
The first GaN HEMTs grown on free-standing diamond, GaN pressure sensors with various designs, robust chemical sensors and power amplifiers delivering hundreds of watts are some of the many highlights of the European project entitled MORGaN. The programme’s leader, Sylvain Delage from III-V Lab, details the many accomplishments.
Thursday 17th May 2012
White LEDs have two major weaknesses: Droop, the decline in device efficiency as the drive current is cranked up; and phosphors,which drag down efficiency and add to production costs. The solution to both these issues, according Zetian Mi from McGill University, is to turn to phosphor-free dot-in-a-wire white LEDs.
Thursday 17th May 2012
Compound Semiconductor Manufacturing Award
Wednesday 16th May 2012
Faster, more responsive photodiodes with greater linearity result from modifying the well-established uni-traveling carrier structure. These higher performance photodiodes that result can improve the performance of analogue optical links, which are used for radio over fibre, distributing high-purity radio frequency (RF) signals and military radar, say Yang Fu, Huapu Pan, Andreas Beling and Joe Campbell from the University of Virginia.

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