Switching from silicon electronics to wide bandgap alternatives promises to deliver improvements in the performance of power supplies, wind turbines, solar systems, hybrid electric vehicles, trams, trains and industrial machinery. Richard Eden from IMS Research, which was recently acquired by IHS, takes a detailed looked at all of these opportunities for wide bandgap devices and identifies the barrier to their mass adoption.
Today’s designers of cutting-edge phones face the same challenge that their predecessors wrestled with: extending the time between battery charging. To succeed now, these designers must build efficient front-end systems offering the high levels of linearity demanded by digital networks operating with complex coding schemes. There are many options for fulfilling these requirements, and they all have their pros and cons, argues Chris Novak, General Manager of 3G/4G Solutions at RFMD.
Traditional triple-junction photovoltaics are marred by brittleness, inflexibility and an efficiency that is limited by the germanium cell. To address all of these issues MicroLink has developed a whole-wafer, high-volume epitaxial lift-off technique for producing ultra-thin cells on GaAs. Richard Stevenson reports.
Swings in market share for the leading GaAs chipmakers, a rise in outsourcing, the introduction of new BiHEMT and HBT processes and bleak prospects for pHEMTs featured at this year’s CS Mantech. Richard Stevenson reports.
During the last 12 months the share prices of all the leading III-V chipmakers have fallen. But why has the value of some companies dropped by just a few percent, while others have plummeted by more than two-thirds? Richard Stevenson investigates.
Rocketing demands for data transfer are signaling a switch from copper interconnects to those based on optical fiber. But these new links will only receive widespread adoption when they are paired with ultra-high-speed sources, such as our VCSELs that combine record-breaking modulation speeds with high temperature operation, say Werner Hofmann and Dieter Bimberg from TU-Berlin.
Silicon foundries could switch production from silicon MOSFETs to those based on III-Vs and germanium by the end of this decade. Making this transition is far from trivial, but progress is being made in gate dielectrics, contact resistance, peak current flow and material quality. Richard Stevenson reports.
Transistors built fromGa2O3 have tremendous potential. They have a far higher electric field strength than those made from GaN and SiC, and they can be formed from native substrates produced with simple, low-cost methods, says Masataka Higashiwaki from the National Institute of Information and Communications Technology (NICT), Japan.
Green GaN lasers are very different from their red and infrared III-V cousins: They are strained, plagued by strong internal electric fields and have massive band offsets. But if you can understand these traits and use some of them to your advantage, it is possible to design devices for plugging the green gap, say Dmitry Sizov, Rajaram Bhat and Chung-En Zah from Corning.
The first GaN HEMTs grown on free-standing diamond, GaN pressure sensors with various designs, robust chemical sensors and power amplifiers delivering hundreds of watts are some of the many highlights of the European project entitled MORGaN. The programme’s leader, Sylvain Delage from III-V Lab, details the many accomplishments.
White LEDs have two major weaknesses: Droop, the decline in device efficiency as the drive current is cranked up; and phosphors,which drag down efficiency and add to production costs. The solution to both these issues, according Zetian Mi from McGill University, is to turn to phosphor-free dot-in-a-wire white LEDs.
Faster, more responsive photodiodes with greater linearity result from modifying the well-established uni-traveling carrier structure. These higher performance photodiodes that result can improve the performance of analogue optical links, which are used for radio over fibre, distributing high-purity radio frequency (RF) signals and military radar, say Yang Fu, Huapu Pan, Andreas Beling and Joe Campbell from the University of Virginia.